Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1Publication Order Number:
DTA114EET1/D
DTA114EET1 Series,
SDTA114EET1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space. The device is housed in
the SC−75/SOT−416 package which is designed for low power
surface mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC−75/SOT−416 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
MAXIMUM RATINGS (TA = 25C unless otherwise noted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SC−75 (SOT−416)
CASE 463
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON BIAS
RESISTOR TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
MARKING DIAGRAM
xx M G
G
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
xx = Specific Device Code
xx = (Refer to page 4)
M = Date Code*
G=Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
DTA114EET1 Series, SDTA114EET1 Series
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2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Total Device Dissipation, FR−4 Board (Note 1)
@ TA = 25C
Derate above 25C
PD200
1.6
mW
mW/C
Thermal Resistance,
Junction−to−Ambient (Note 1)
RqJA 600
C/W
Total Device Dissipation,
FR−4 Board (Note 2) @ TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 400 C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 1.0 Inch Pad.
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
V(BR)CBO 50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 3)
(IC = 2.0 mA, IB = 0)
V(BR)CEO 50 − −
Vdc
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
hFE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
DTA114EET1 Series, SDTA114EET1 Series
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3
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
ON CHARACTERISTICS (Note 4)
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA)
DTA123EET1
(IC = 10 mA, IB = 1 mA)
DTA114TET1/DTA143TET1
DTA143ZET1/DTA124XET1
DTA143EET1
VCE(sat) − − 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
DTA114EET1
DTA124EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
DTA144EET1
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
DTA115EET1
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
DTA144WET1
VOL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 6)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
VOH 4.9 − − Vdc
Input Resistor
DTA114EET1
DTA124EET1
DTA144EET1
DTA114YET1, SDTA114YET1
DTA114TET1
DTA143TET1
DTA123EET1
DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA115EET1
DTA144WET1
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
Resistor Ratio
DTA114EET1/DTA124EET1
DTA144EET1/DTA115EET1
DTA114YET1, SDTA114YET1
DTA114TET1/DTA143TET1
DTA123EET1/DTA143EET1
DTA143ZET1
DTA124XET1
DTA123JET1
DTA144WET1
R1/R2
−
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
−
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
−
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
−
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
DTA114EET1 Series, SDTA114EET1 Series
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4
ORDERING INFORMATION AND RESISTOR VALUES
Device Marking R1 (K) R2 (K) Package Shipping†
DTA114EET1
6A 10 10
SC−75 3,000 Tape & Reel
DTA114EET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA124EET1
6B 22 22
SC−75 3,000 Tape & Reel
DTA124EET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA144EET1
6C 47 47
SC−75 3,000 Tape & Reel
DTA144EET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA114YET1
6D 10 47
SC−75 3,000 Tape & Reel
DTA114YET1G SC−75
(Pb−Free)
3,000 Tape & Reel
SDTA114YET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA114TET1
6E 10
SC−75 3,000 Tape & Reel
DTA114TET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA143TET1
6F 4.7
SC−75 3,000 Tape & Reel
DTA143TET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA123EET1
6H 2.2 2.2
SC−75 3,000 Tape & Reel
DTA123EET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA143EET1
43 4.7 4.7
SC−75 3,000 Tape & Reel
DTA143EET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA143ZET1
6K 4.7 47
SC−75 3,000 Tape & Reel
DTA143ZET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA124XET1
6L 22 47
SC−75 3,000 Tape & Reel
DTA124XET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA123JET1
6M 2.2 47
SC−75 3,000 Tape & Reel
DTA123JET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA115EET1
6N 100 100
SC−75 3,000 Tape & Reel
DTA115EET1G SC−75
(Pb−Free)
3,000 Tape & Reel
DTA144WET1
6P 47 22
SC−75 3,000 Tape & Reel
DTA144WET1G SC−75
(Pb−Free)
3,000 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DTA114EET1 Series, SDTA114EET1 Series
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5
Figure 1. Derating Curve
250
200
150
100
50
0
-50 0 50 100 150
TA, AMBIENT TEMPERATURE (C)
PD, POWER DISSIPATION (MILLIWATTS)
RqJA = 600C/W
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
Figure 2. Normalized Thermal Response
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
DTA114EET1 Series, SDTA114EET1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114EET1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 3. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=-25C
25C
1 2 3 4 5 6 7 8 9 10
Figure 4. DC Current Gain
Figure 5. Output Capacitance Figure 6. Output Current versus Input Voltage
Figure 7. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75C
-25C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25C
25C
75C
75C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25C
25C
75C
25C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25C
VO = 5 V
VO = 0.2 V
DTA114EET1 Series, SDTA114EET1 Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS − DTA123EET1
75C
25C
−25C
Figure 8. VCE(sat) versus ICFigure 9. DC Current Gain
Figure 10. Output Capacitance Figure 11. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 12. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.001
1000
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
12
6
45 50403020100
0
Cob, CAPACITANCE (pF)
2
4
8
10
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
10987
10
151050
0.1
1
20 25
Vin, INPUT VOLTAGE (VOLTS)
75C
25C
TA = −25C
75C
25C
TA = −25C
75C25C
TA = −25C
0.01
3525155
0.01
0.1
IC/IB = 10 VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25C
VO = 5 V
VO = 0.2 V
DTA114EET1 Series, SDTA114EET1 Series
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8
TYPICAL ELECTRICAL CHARACTERISTICS − DTA124EET1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 13. VCE(sat) versus ICFigure 14. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 15. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0 10 20 30
VO = 0.2 V
TA=-25C
75C
100
10
1
0.1 40 50
Figure 16. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 17. Input Voltage versus Output Current
0.01
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75C
25C
TA=-25C
50
010 20 30 40
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25C
IC/IB = 10
25C
-25C
VCE = 10 V
TA=75C
f = 1 MHz
lE = 0 V
TA = 25C
75C25C
TA=-25C
VO = 5 V
DTA114EET1 Series, SDTA114EET1 Series
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9
TYPICAL ELECTRICAL CHARACTERISTICS − DTA144EET1
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 18. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75C
25C
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 19. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
-25C
Figure 20. Output Capacitance Figure 21. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25C
Vin, INPUT VOLTAGE (VOLTS)
-25C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456789
Figure 22. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=-25C
25C
75C
50
IC/IB = 10
TA=-25C25C
TA=75C
f = 1 MHz
lE = 0 V
TA = 25C
VO = 5 V
TA=75C
VO = 0.2 V
DTA114EET1 Series, SDTA114EET1 Series
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10
TYPICAL ELECTRICAL CHARACTERISTICS − DTA114YET1, SDTA114YET1
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 23. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 24. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 25. Output Capacitance Figure 26. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 27. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25C
25C
TA=75C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25C
LOAD
+12 V
Figure 28. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25C
IC/IB = 10 TA=-25C
TA=75C25C
-25C
VO = 5 V
VO = 0.2 V 25C
TA=-25C
75C
75C
DTA114EET1 Series, SDTA114EET1 Series
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11
TYPICAL ELECTRICAL CHARACTERISTICS — DTA115EET1
75C
25C
−25C
Figure 29. Maximum Collector Voltage versus
Collector Current
Figure 30. DC Current Gain
Figure 31. Output Capacitance Figure 32. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 33. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
76543210
IC, COLLECTOR CURRENT (mA)
100101
100
10
1
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.1
1
10
IC, COLLECTOR CURRENT (mA)
10987
100
121086420
1
10
181614 20
Vin, INPUT VOLTAGE (VOLTS)
IC/IB = 10
75C
25C
TA = −25C
VCE = 10 V
75C
25C
TA = −25C
VO = 5 V
VO = 0.2 V
75C
25CTA = −25C
f = 1 MHz
IE = 0 V
TA = 25C
DTA114EET1 Series, SDTA114EET1 Series
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12
TYPICAL ELECTRICAL CHARACTERISTICS — DTA144WET1
Figure 34. Maximum Collector Voltage versus
Collector Current
Figure 35. DC Current Gain
Figure 36. Output Capacitance Figure 37. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 38. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
1
0.1
35302520151050
IC, COLLECTOR CURRENT (mA)
100101
100
10
0.01
1000
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
6050403020100
0
Cob, CAPACITANCE (pF)
0.2
0.4
0.8
1.0
100
6543210
0.001
1
10
IC, COLLECTOR CURRENT (mA)
11987
100
151050
1
10
20 25
Vin, INPUT VOLTAGE (VOLTS)
504540
0.1
0.01
10
1.2
f = 1 MHz
IE = 0 V
TA = 25C
75C
25C
TA = −25C
VO = 5 V
75C
25C
TA = −25C
VO = 0.2 V
75C
25C
TA = −25C
IC/IB = 10
VCE = 10 V
75C
25C
TA = −25C
DTA114EET1 Series, SDTA114EET1 Series
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13
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463−01
ISSUE F
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70
0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
0.787
0.031
0.508
0.020 1.000
0.039
ǒmm
inchesǓ
SCALE 10:1
0.356
0.014
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.803
0.071
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