NBB-500 dc-4GHz Cascadable Broadband GaAs MMIC Amplifier * * * * * 6000030 Rev. B Applications Features * Reliable, low-cost HBT design 19.0 dB gain, +12.3 dBm P1dB @ 2 GHz * * High P1dB of +13.7 dBm at 6.0 GHz Single power supply operation 50-ohm input/output matched for high-frequency utilization Narrow & broadband commercial & military radio designs Linear & saturated amplifier applications Gain stage or driver amplifiers utilized in microwave radio and optical designs such as PTP, PMP, LMDS, UNII, VSAT, WLAN, cellular, and DWDM systems Description RF Nitro's NBB-500 cascadable broadband GaInP/GaAs MMIC amplifier is a low-cost high-performance solution for your general-purpose RF and microwave amplification needs. This 50-ohm gain block is based upon a reliable HBT (Heterojunction Bipolar Transistor) proprietary MMIC design, providing unsurpassed performance for small-signal applications. The NBB-500 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high-volume tape-and-reel requirements. The NBB-500 incorporates external dc decoupling capacitors, which limit the low-frequency response. Designed with an external bias resistor, the NBB-500 provides flexibility and stability to your requirement. Package 4-Lead Ceramic Micro-X The NBB-500 is available in 1,000 or 3,000 piece-per-reel quantities. Connectorized evaluation boards are available for characterization purposes. Ele ctrica l Spe cifica tions Vd= + 3.9 V, Icc = 35 m A , Z o = 50 , T A = + 25 C Param eter Test Conditions U nits Min. Typ. f = 0.1 to 1.0 G Hz f = 1.0 to 2.0 G Hz f = 2.0 to 4.0 G Hz dB dB dB 19.0 Sm all Signal Power Gain, S21 20.5 19.5 18.5 Gain Flatness, GF f = 0.1 to 3.0 G Hz dB Input and O utput V SWR f = 0.1 to 4.0 G Hz f = 4.0 to 6.0 G Hz f = 6.0 to 20.0 GHz Bandwidth, BW BW3 (3dB) GHz 4.2 O utput Power @ 1-dB Com pression, P1dB f = 2.0 G Hz f = 6.0 G Hz dBm dBm 12.3 13.7 Noise Figure, NF f = 3.0 G Hz dB 3.2 3rd O rder Intercept, IP3 f = 2.0 G Hz dBm + 25.4 Reverse Isolation, S12 f = 0.1 to 12.0 GHz dB -17.5 Device Voltage, Vd Gain Tem perature Coefficient, T + 0.8 1.45 1.30 1.90 V G T 16.0 Max. dB / o C 3.6 3.9 -0.0015 10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950 http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com 4.2 NBB-500 dc-4 GHz Cascadable Broadband GaAs MMIC Amplifier Absolute Maximum Ratings Exceeding any one or a combination of these limits may cause permanent damage. P aramete r 6000030 Rev. B Ordering Information A bsolute Maximum Part Number Package NBB-500 Low-Cost 4-Lead Ceram ic Pkg. RF Input Power + 20 dBm NBB-500T 1 Tape & Reel, 1000 Pieces Power Dissipation 300 m W NBB-500T 3 Tape & Reel, 3000 Pieces Device Current 70 m A NBB-500-D NBB-500 Chip Form Channel Tem perature 200 C O perating Tem perature -45 C to + 85 C NBB-500-E NBB-500 Evaluation Board Storage Tem perature -65 C to + 150 C Typical Bias Configuration Application notes related to biasing circuit, device footprint, and thermal considerations are available upon request. Vcc MTTF vs. Temperature @ Icc = 35 mA Case Temperature Junction Temperature MTTF (hrs) 85 C 120C Rcc 120 ohms 4 >1,000,000 L choke 1 3 In Out C block C block T herm al R esi stance, at any tem perature (i n C /Watt) can b e esti m ated b y the fo l l o w in g equation: JC (C/Watt) = 256[T J (C) /120] JC Vc 2 Thermal Resistance Thermal Resistance Recommended Bias Resistor Values 256C/Watt Typical T y p ica l S - P a r a m e t e r D a t a Supply Voltage, Vcc (V) 5 8 10 Bias Resistor, Rcc () 31 117 174 12 15 20 231 317 460 V d = + 3 .9 V, Icc = 3 5 m A , Z o = 5 0 , T A = + 2 5 C Fr eq (G H z ) S11 (d B ) S11 M ag S11 A ng S21 (d B ) S21 M ag S21 A ng S12 (d B ) S12 M ag S12 A ng S22 (d B ) S22 M ag S22 A ng 0 .2 - 8 .0 0 .4 0 1 7 8 .9 1 2 .7 4 .3 4 1 7 8 .8 - 1 8 .3 0 .1 2 0 .1 - 9 .0 0 .3 5 1 7 9 .3 0 .5 - 8 .0 0 .4 0 1 7 6 .2 1 3 .2 4 .5 5 1 7 5 .5 - 1 8 .3 0 .1 2 0 .7 - 9 .0 0 .3 5 1 7 6 .5 1 .0 - 8 .0 0 .4 0 1 7 1 .4 1 3 .2 4 .5 5 1 7 0 .4 - 1 8 .2 0 .1 2 1 .4 - 9 .0 0 .3 5 1 7 1 .9 2 .0 - 8 .3 0 .3 9 1 6 2 .0 1 3 .3 4 .6 1 1 5 9 .4 - 1 8 .0 0 .1 3 2 .7 - 9 .0 0 .3 5 1 6 2 .7 4 .0 - 9 .3 0 .3 4 1 4 2 .6 1 3 .7 4 .8 6 1 3 8 .5 - 1 7.2 0 .1 4 3 .3 - 9 .2 0 .3 5 1 4 1 .8 6 .0 - 1 1 .8 0 .2 6 1 2 0 .8 1 3 .9 4 .9 6 1 0 8 .9 - 1 6 .1 0 .1 6 0 .1 - 9 .7 0 .3 3 1 1 4 .7 8 .0 - 1 7.2 0 .1 4 1 0 2 .1 1 3 .8 4 .8 9 8 0 .4 - 1 5 .4 0 .1 7 - 6 .3 - 1 1 .1 0 .2 8 8 0 .1 1 0 .0 - 2 8 .9 0 .0 4 1 5 0 .4 1 3 .3 4 .6 4 5 0 .5 - 1 4 .9 0 .1 8 - 1 4 .3 - 1 3 .1 0 .2 2 3 7.1 1 2 .0 - 1 8 .9 0 .1 1 - 1 5 5 .8 1 1 .9 3 .9 5 2 3 .1 - 1 4 .8 0 .1 8 - 2 1 .2 - 1 4 .3 0 .1 9 - 1 4 .8 1 4 .0 - 1 4 .7 0 .1 8 - 1 6 8 .1 9 .8 3 .1 0 4 .3 - 1 4 .8 0 .1 8 - 2 6 .9 - 1 3 .7 0 .2 1 - 6 0 .5 10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950 http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com NBB-500 dc-4 GHz Cascadable Broadband GaAs MMIC Amplifier 6000030 Rev. B Typical Performance Measurements TA = +25 C, Vd = +3.9 V S11 vs Icc (mA) S21 vs Icc (mA) 0 25 -5 55mA 20 25mA -10 25mA S21 (dB) S11 (dB) -15 -20 55mA -25 15 10 -30 5 -35 0 -40 0 5 10 15 Frequency (GHz) 0 20 5 15 20 15 20 S22 vs Icc (mA) 0 -5 -5 -10 S22 (dB) S12 (dB) S12 vs Icc (mA) 0 -10 -15 25mA -15 -20 55mA 25mA -20 10 Frequency (GHz) -25 55mA -30 -25 0 5 10 15 0 20 5 Frequency (GHz) P1dB vs Frequency Device Voltage (Vd) vs Amplifier Current (Icc) 20 4 3.95 P1dB (dBm) 15 3.9 Vd (V) 3.85 10 5 3.8 0 3.75 20 25 30 35 Icc (mA) 40 45 1 50 2 3 4 5 Frequency (GHz) Pout/Gain vs Pin @ 2GHz 6 Pout/Gain vs Pin @ 6GHz 20 20 Pout (dBm), Gain (dB) Pout (dBm), Gain (dB) 10 Frequency (GHz) 15 10 5 0 15 10 5 0 -12 -10 -8 -6 Pin (dBm) -4 -2 0 -14 -12 -10 -8 -6 -4 Pin (dBm) 10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950 http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com -2 0 2 NBB-500 Cascadable Broadband GaAs MMIC Amplifier dc-4 GHz 6000030 Rev. B Third Order Intercept vs Frequency 35 Output IP3 (dBm) 30 25 20 15 10 5 0 1 2 3 4 Frequency (GHz) 5 6 Tape & Reel Dimensions Package Outline Drawing 4-lead ceramic Micro-X 45 UNITS: INCHES (mm) 0.055 (1.40) UNITS: INCHES [mm] 1 N5 0.040 (1.02) 2 0.070 (1.78) Chip Outline Drawing NBB-500-D Chip Dimensions: 0.017" X 0.017" X 0.004" 4 INPUT OUTPUT 0.0170.001 [0.440.03] GND VIA 3 0.020 0.200 sq (5.08) 0.005 (0.13) 0.0170.001 [0.440.03] 10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950 http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com 0.0040.001 [0.100.03] NBB-500 Cascadable Broadband GaAs MMIC Amplifier dc-4 GHz Application Notes 6000030 Rev. B Die Attach: The die attach process mechanically attaches the die to the circuit substrate. In addition, it electrically connects the ground to the trace on which the chip is mounted, and establishes the thermal path by which heat can leave the chip. Wire Bonding: Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding methods are acceptable practices for wire bonding. Assembly Procedure: Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom metalization are gold. Conductive silver-filled epoxies are recommended. This procedure involves the use of epoxy to form a joint between the backside gold of the chip and the metalized area of the substrate. A 150C cure for 1 hour is necessary. Recommended epoxy is Ablebond 84-1LMI from Ablestik. Bonding Temperature (Wedge or Ball): It is recommended that the heater block temperature be set to 160C +/- 10C. ESD Sensitive Device RF Nitro Communications has furnished the information contained within this document to the best of our ability and accuracy. However, we reserve the right to make changes to our products, and supporting data, at our sole discretion without notice. 10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950 http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com