NBB-500T1 - RF Nitro Communications, Inc.

Description

RF Nitro’s NBB-500 cascadable broadband GaInP/GaAs MMIC

amplifier is a low-cost high-performance solution for your

general-purpose RF and microwave amplification needs.

This 50-ohm gain block is based upon a reliable HBT

(Heterojunction Bipolar Transistor) proprietary MMIC de-

sign, providing unsurpassed performance for small-signal

applications.

The NBB-500 is packaged in a low-cost, surface-mount ce-

ramic package, providing ease of assembly for high-volume

tape-and-reel requirements. The NBB-500 incorporates ex-

ternal dc decoupling capacitors, which limit the low-fre-

quency response. Designed with an external bias resistor,

the NBB-500 provides flexibility and stability to your require-

ment.

The NBB-500 is available in 1,000 or 3,000 piece-per-reel quantities. Connectorized evaluation boards are

available for characterization purposes.

GT∂

∂

Electrical Specifications Vd= +3.9 V, Icc = 35 mA, Zo = 50 Ω, TA = +25 °C

Parameter Test Conditions Units Min. Typ. Max.

Small Signal Power Gain, S21

=0.1 to 1.0 GHz

=1.0 to 2.0 GHz

=2.0 to 4.0 GHz

19.0

16.0

20.5

19.5

18.5

Gain Flatness, GF

=0.1 to 3.0 GHz dB + 0.8

Input and Output VSWR

=0.1 to 4.0 GHz

=4.0 to 6.0 GHz

=6.0 to 20.0 GHz

1.45

1.30

1.90

Bandwidth, BW BW3 (3dB) GHz 4.2

Output Power @ 1-dB

Compression, P1dB

=2.0 GHz

=6.0 GHz

dBm

12.3

13.7

Noise Figure, NF

=3.0 GHz dB 3.2

3rd O rder Intercept, IP3

=2.0 GHz dBm +25.4

Reverse Isolation, S12

=0.1 to 12.0 GHz dB -17.5

Device Voltage, Vd V 3.6 3.9 4.2

Gain Temperature Coefficient,

dB / oC

-0.0015

Features

• Reliable, low-cost HBT design

• 19.0 dB gain, +12.3 dBm P1dB @ 2 GHz

• High P1dB of +13.7 dBm at 6.0 GHz

• Single power supply operation

• 50-ohm input/output matched for high-frequency

utilization

Applications

• Narrow & broadband commercial & military

radio designs

• Linear & saturated amplifier applications

• Gain stage or driver amplifiers utilized in

microwave radio and optical designs such

as PTP, PMP, LMDS, UNII, VSAT, WLAN,

cellular, and DWDM systems

6000030 Rev. B

NBB-500

dc-4GHz

Cascadable Broadband GaAs MMIC Amplifier

10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950

http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com

Package 4-Lead Ceramic Micro-X

Out

Rcc

120 ohms

Vcc

L choke

C blockC block

Ordering Information 6000030 Rev. B

NBB-500

dc-4 GHz

Cascadable Broadband GaAs MMIC Amplifier

Absolute Maximum Ratings

Exceeding any one or a combination of these limits

may cause permanent damage.

Parameter Absolute Maximum

RF Input Power +20 dBm

Power Dissipation 300 mW

Device Current 70 mA

Channel Temperature 200 °C

Operating Temperature -45 °C to +85 °C

Storage Temperature -65 °C to +150 °C

Part Number Package

NBB-500 Low-Cost 4-Lead Ceramic Pkg.

NBB-500T1 Tape & Reel, 1000 Pieces

NBB-500T3 Tape & Reel, 3000 Pieces

NBB-500-D NBB-500 Chip Form

NBB-500-E NBB-500 Evaluation Board

MTTF vs. Temperature @ Icc = 35 mA

Case Temperature Junction Temperature MTTF (hrs)

85 °C 120°C >1,000,000

Thermal Resistance

Typical Bias Configuration

Application notes related to biasing circuit, device

footprint, and thermal considerations are available

upon request.

Recommended Bias Resistor Values

Supply Voltage, Vcc (V) 5 8 10 12 15 20

Bias Resistor, Rcc (Ω) 31 117 174 231 317 460

10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950

http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com

T ypical S-Parameter Data Vd= + 3 .9 V, Icc = 35 m A , Zo = 50 Ω, TA = +25 °C

Freq

(GHz)

S11

(dB)

S11

Mag

S11

Ang

S21

(dB)

S21

Mag

S21

Ang

S12

(dB)

S12

Mag

S12

Ang

S22

(dB)

S22

Mag

S22

Ang

0.2 -8.0 0.40 178.9 12.7 4.34 178.8 -18.3 0.12 0.1 -9.0 0.35 179.3

0.5 -8.0 0.40 176.2 13.2 4.55 175.5 -18.3 0.12 0.7 -9.0 0.35 176.5

1.0 -8.0 0.40 171.4 13.2 4.55 170.4 -18.2 0.12 1.4 -9.0 0.35 171.9

2.0 -8.3 0.39 162.0 13.3 4.61 159.4 -18.0 0.13 2.7 -9.0 0.35 162.7

4.0 -9.3 0.34 142.6 13.7 4.86 138.5 -17.2 0.14 3.3 -9.2 0.35 141.8

6.0 -11.8 0.26 120.8 13.9 4.96 108.9 -16.1 0.16 0.1 -9.7 0.33 114.7

8.0 -17.2 0.14 102.1 13.8 4.89 80.4 -15.4 0.17 -6.3 -11.1 0.28 80.1

10.0 -28.9 0.04 150.4 13.3 4.64 50.5 -14.9 0.18 -14.3 -13.1 0.22 37.1

12.0 -18.9 0.11 -155.8 11.9 3.95 23.1 -14.8 0.18 -21.2 -14.3 0.19 -14.8

14.0 -14.7 0.18 -168.1 9.8 3.10 4.3 -14.8 0.18 -26.9 -13.7 0.21 -60.5

Thermal Resistance, at any temperature (in

°C/Watt) can be estimated by the following

equation: θJC(°C/Watt) = 256[TJ(°C) /120]

θJC Thermal Resistance 256°C/Watt Typical

0 5 10 15 20

S21 vs Icc (mA)

S21 (dB)

Frequenc

(GHz)

25mA

55mA

-40

-35

-30

-25

-20

-15

-10

-5

0 5 10 15 20

S11 vs Icc (mA)

S11 (dB)

Frequency (GHz)

25mA

55mA

6000030 Rev. B

NBB-500

dc-4 GHz

Cascadable Broadband GaAs MMIC Amplifier

10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950

http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com

Typical Performance Measurements TA = +25° C, Vd = +3.9 V

-25

-20

-15

-10

-5

0 5 10 15 20

S12 vs Icc (mA)

S12 (dB)

Fre

uenc

(

GHz

)

25mA

55mA

-30

-25

-20

-15

-10

-5

0 5 10 15 20

S22 vs Icc (mA)

S22 (dB)

Frequency (GHz)

25mA

55mA

3.75

3.8

3.85

3.9

3.95

20 25 30 35 40 45 50

Device Voltage (Vd) vs Amplifier Current (Icc)

Vd (V)

Icc (mA)

123456

P1dB vs Frequency

P1dB (dBm)

Frequency (GHz)

-12 -10 -8 -6 -4 -2 0

Pout/Gain vs Pin @ 2GHz

Pout (dBm), Gain (dB)

Pin (dBm)

-14 -12 -10 -8 -6 -4 -2 0 2

Pout/Gain vs Pin @ 6GHz

Pout (dBm), Gain (dB)

Pin (dBm)

Tape & Reel Dimensions

6000030 Rev. B

NBB-500

dc-4 GHz

Cascadable Broadband GaAs MMIC Amplifier

Chip Outline Drawing NBB-500-D

Chip Dimensions: 0.017” X 0.017” X 0.004”

Package Outline Drawing 4-lead ceramic Micro-X

GND

VIA

INPUT

OUTPUT

UNITS: INCHES

[mm]

0.017±0.001

[0.44±0.03]

0.017±0.001

[0.44±0.03]

0.004±0.001

[0.10±0.03]

10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950

http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com

123456

Third Order Intercept vs Frequency

Output IP3 (dBm)

Frequency (GHz)

0.070

(1.78)

UNITS:

INCHES

(mm)

0.200 sq

(5.08)

0.040

(1.02)

45°

0.055

(1.40)

0.005

(0.13)

0.020

6000030 Rev. B

NBB-500

dc-4 GHz

Cascadable Broadband GaAs MMIC Amplifier

Application Notes

Die Attach:

The die attach process mechanically attaches the die to the circuit substrate. In addition, it

electrically connects the ground to the trace on which the chip is mounted, and establishes the

thermal path by which heat can leave the chip.

Wire Bonding:

Electrical connections to the chip are made through wire bonds. Either wedge or ball bonding

methods are acceptable practices for wire bonding.

Assembly Procedure:

Epoxy or eutectic die attach are both acceptable attachment methods. Top and bottom

metalization are gold. Conductive silver-filled epoxies are recommended. This procedure in-

volves the use of epoxy to form a joint between the backside gold of the chip and the metalized

area of the substrate. A 150°C cure for 1 hour is necessary. Recommended epoxy is Ablebond

84-1LMI from Ablestik.

Bonding Temperature (Wedge or Ball):

It is recommended that the heater block temperature be set to 160°C +/- 10°C.

ESD Sensitive Device

RF Nitro Communications has furnished the information contained within this document to the best of our ability and accuracy.

However, we reserve the right to make changes to our products, and supporting data, at our sole discretion without notice.

10420-F Harris Oaks Boulevard Charlotte, NC 28269 Phone (704) 596-9060 FAX (704)596-0950

http://www.rfnitro.com info@rfnitro.com sales@rfnitro.com