NTE180 (PNP) & NTE181 (NPN)
Silicon Power Transistor
High Power Audio Amplifier
Description:
The NTE180 (PNP) and NTE181 (NPN) are silicon complementary transistors in a TO3 type case
designed for use as output devices in complementary audio amplifiers to 100 watts music power per
channel.
Features:
DHigh DC Current Gain: hFE = 25 – 100 @ IC = 7.5A
DExcellent Safe Operating Area
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCER 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 90V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 4V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB7.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD200W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 1.14W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 0.875°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CER IC = 200mA, RBE = 100Ω, Note 1 100 – – V
Collector–Emitter Sustaining Voltage VCEO(sus) IC = 200mA, Note 1 90 – – V
Collector–Base Cutoff Current ICBO VCB = 100V, IE = 0 – – 1.0 mA
VCB = 100V, IE = 0, TC = +150°C – – 5.0 mA
Emitter–Base Cutoff Current IEBO VBE = 4V, IC = 0 – – 1.0 mA
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE IC = 7.5A, VCE = 2V 25 –100
Base–Emitter ON Voltage VBE(on) IC = 7.5A, VCE = 2V – – 1.3 V
Collector–Emitter Saturation Voltage VCE(sat) IC = 7.5A, IB = 750mA – – 0.8 V
Base–Emitter Saturation Voltage VBE(sat) IC = 7.5A, IB = 750mA – – 1.3 V
Dynamic Characteristics
Current Gain–Bandwidth Product fTIC = 1A, VCE = 10V, f = 1MHz 2.0 – – MHz
Note 1. Pulse Test: Pulse Width ≤ 300µs. Duty Cycle ≤ 2%.
Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and
NTE181 (NPN).
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
