AP4439GMT-HF Halogen-Free Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement SO-8 Compatible Lower Gate Charge D BVDSS RDS(ON) ID -30V 10m -58A G RoHS Compliant & Halogen-Free S D Description AP4439 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The PMPAK (R) 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance. D D D S S S G PMPAK (R) 5x6 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage +25 V ID@TC=25 Continuous Drain Current (Chip), VGS @ 10V ID@TA=25 ID@TA=70 -58 A 3 -18.5 A 3 -14.8 A -200 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation 50 W PD@TA=25 Total Power Dissipation 5 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 2.5 /W 25 /W 1 201205211 AP4439GMT-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=-250uA -30 - - V VGS=-10V, ID=-20A - 8 10 m VGS=-4.5V, ID=-12A - 11 15 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.4 -3 V gfs Forward Transconductance VDS=-10V, ID=-20A - 28 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=-20A - 30 48 nC Qgs Gate-Source Charge VDS=-15V - 6 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 15 - nC td(on) Turn-on Delay Time VDS=-15V - 11 - ns tr Rise Time ID=-20A - 7 - ns td(off) Turn-off Delay Time RG=3.3 - 100 - ns tf Fall Time VGS=-10V - 65 - ns Ciss Input Capacitance VGS=0V - 2750 4400 pF Coss Output Capacitance VDS=-15V - 490 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 420 - pF Rg Gate Resistance f=1.0MHz - 5.3 10.6 Min. Typ. Max. Units Source-Drain Diode Symbol Parameter 2 Test Conditions VSD Forward On Voltage IS=-20A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-10A, VGS=0V, - 30 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 24 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP4439GMT-HF 120 200 T C =25 o C -10V -7.0V -6.0V -5.0V V G = -4.0V 100 -ID , Drain Current (A) -ID , Drain Current (A) 160 T C = 150 o C 120 80 80 -10V -7.0V -6.0V -5.0V V G = -4.0V 60 40 40 20 0 0 0 4 8 12 0 16 2 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6 8 Fig 2. Typical Output Characteristics 12 1.6 I D = -20A V G = -10V I D = -12 A o T C =25 C 11 1.4 Normalized RDS(ON) RDS(ON) (m) 4 -V DS , Drain-to-Source Voltage (V) 10 9 8 1.2 1.0 0.8 7 0.6 2 4 6 8 10 -50 -V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 20 2.0 I D = -250uA 1.6 Normalized -VGS(th) -IS(A) 16 12 T j =150 o C T j =25 o C 8 1.2 0.8 0.4 4 2.01E+09 0.0 0 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP4439GMT-HF f=1.0MHz 5000 10 4000 8 C (pF) -VGS , Gate to Source Voltage (V) I D = -20 A V DS = -15V 6 3000 C iss 4 2000 2 1000 C oss C rss 0 0 0 10 20 30 40 50 60 1 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 1000 Operation in this area limited by RDS(ON) 100 -ID (A) 100us 1ms 10 10ms 100ms DC T C =25 o C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T c 0.01 Single Pulse 0.01 1 0.1 1 10 0.00001 100 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 80 V DS =-5V T j =25 o C T j =150 o C -ID , Drain Current (A) -ID , Drain Current (A) 80 60 40 60 40 20 20 2.01E+09 0 0 0 1 2 3 4 5 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 o Tc , Case Temperature ( C ) Fig 12. Maximum Continuous Drain Current v.s. Case Temperature 4