Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -30V
▼ SO-8 Compatible RDS(ON) 10mΩ
▼ Lower Gate Charge ID-58A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TC=25℃W
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient325 ℃/W
Data and specifications subject to change without notice
201205211
1
AP4439GMT-HF
Rating
Halogen-Free Product
-30
+25
-18.5
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current (Chip), VGS @ 10V -58
-55 to 150
Continuous Drain Current3, VGS @ 10V -14.8
Pulsed Drain Current1-200
Storage Temperature Range
5
-55 to 150
Total Power Dissipation 50
Thermal Data
Parameter
Total Power Dissipation
Operating Junction Temperature Range
AP4439 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK®5x6 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
SSSGPMPAK®
5
x
6
D
D
D
D
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-20A - 8 10 mΩ
VGS=-4.5V, ID=-12A - 11 15 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 -1.4 -3 V
gfs Forward Transconductance VDS=-10V, ID=-20A - 28 - S
IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=-20A - 30 48 nC
Qgs Gate-Source Charge VDS=-15V - 6 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 15 - nC
td(on) Turn-on Delay Time VDS=-15V - 11 - ns
trRise Time ID=-20A - 7 - ns
td(off) Turn-off Delay Time RG=3.3Ω- 100 - ns
tfFall Time VGS=-10V - 65 - ns
Ciss Input Capacitance VGS=0V - 2750 4400 pF
Coss Output Capacitance VDS=-15V - 490 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 420 - pF
RgGate Resistance f=1.0MHz - 5.3 10.6 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-20A, VGS=0V - - -1.2 V
trr Reverse Recovery Time IS=-10A, VGS=0V, - 30 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 24 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec
2
AP4439GMT-HF
A
P4439GMT-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.01E+09
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
40
80
120
160
200
0481216
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
-10V
-7.0V
-6.0V
-5.0V
VG=-4.0V
TC=25oC
0
20
40
60
80
100
120
02468
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150oC-10V
-7.0V
-6.0V
-5.0V
VG=-4.0V
7
8
9
10
11
12
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-12 A
TC=25oC
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D= -20A
VG= -10V
0.0
0.4
0.8
1.2
1.6
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th)
0
4
8
12
16
20
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oCTj=150oC
I
D= -250uA
AP4439GMT-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
2.01E+09
Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4
0
2
4
6
8
10
0 102030405060
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
I
D=-20 A
VDS = -15V
0
1000
2000
3000
4000
5000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + Tc
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
1
10
100
1000
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TC=25oC
Single Pulse
100us
1ms
10ms
100ms
DC
Operation in this area
limited by RDS(ON)
0
20
40
60
80
25 50 75 100 125 150
Tc , Case Temperature ( oC )
-ID , Drain Current (A)
0
20
40
60
80
100
0123456
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oC
Tj=25oC
VDS =-5V
