MITSUBISHI SEMICONDUCTOR THYRISTOR CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE OUTLINE DRAWING CR02AM-8A Dimensions in mm 5.0 MAX 5.0 MAX 4.4 VOLTAGE CLASS TYPE NAME 2 3 12.5 MIN 1 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL CIRCUMSCRIBE CIRCLE 0.7 1.3 1 3 2 * IT (AV) ........................................................................ 0.3A * VDRM ....................................................................... 400V * IGT ......................................................................... 100A 3.9 MAX 1.25 1.25 JEDEC : TO-92 APPLICATION Strobe flasher MAXIMUM RATINGS Symbol Voltage class Parameter Unit 8 VRRM Repetitive peak reverse voltage 400 V VRSM Non-repetitive peak reverse voltage 500 V VR (DC) DC reverse voltage 320 V VDRM Repetitive peak off-state voltage 1 400 V VD (DC) DC off-state voltage 1 320 V Symbol Conditions Parameter IT (RMS) RMS on-state current IT (AV) Average on-state current Commercial frequency, sine half wave, 180 conduction, Ta=30C ITSM Surge on-state current 60Hz sine half wave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VFGM for fusing Ratings Unit 0.47 A 0.3 A 10 A 0.4 A2s 0.1 W 0.01 W Peak gate forward voltage 6 V VRGM Peak gate reverse voltage 6 V IFGM Peak gate forward current 0.1 Tj Junction temperature Storage temperature Tstg -- Weight Typical value A -40 ~ +125 C -40 ~ +125 C 0.23 g 1. With gate to cathode resistance RGK=1k. Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Parameter Symbol Limits Test conditions Min. Typ. Max. Unit IRRM Repetitive peak reverse current Tj=125C, V RRM applied -- -- 0.1 mA IDRM Repetitive peak off-state current Tj=125C, V DRM applied, RGK=1k -- -- 0.1 mA VTM On-state voltage Tc=25C, ITM=0.6A, instantaneous value -- -- 1.6 V VGT Gate trigger voltage Tj=25C, VD =6V, IT=0.1A 3 -- -- 0.8 V VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM, RGK =1k 0.2 -- -- IGT Gate trigger current Tj=25C, VD =6V, IT=0.1A 3 1 -- IH Holding current Tj=25C, VD=12V, RGK=1 -- -- 3 R th (j-a) Thermal resistance Junction to ambient -- -- 180 100 2 V A mA C/ W 2. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item A B C IGT (A) 1 ~ 30 20 ~ 50 40 ~ 100 The above values do not include the current flowing through the 1k resistance between the gate and cathode. 3. IGT, VGT measurement circuit. A1 3V DC IGS IGT A3 A2 RGK 1 1k SWITCH 2 60 TUT V1 6V DC VGT SWITCH 1 : IGT measurement SWITCH 2 : VGT measurement (Inner resistance of voltage meter is about 1k) MAXIMUM ON-STATE CHARACTERISTICS 101 7 Ta = 25C 5 3 2 100 7 5 3 2 10-1 7 5 3 2 10-2 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 10 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) PERFORMANCE CURVES 9 8 7 6 5 4 3 2 1 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR02AM-8A LOW POWER USE GLASS PASSIVATION TYPE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 102 101 7 5 3 2 100 VFGM = 6V PGM = 0.1W PG(AV) = 0.01W VGT = 0.8V 7 5 3 2 IGT = 100A (Tj = 25C) 10-1 7 5 3 2 VGD = 0.2V IFGM = 0.1A GATE CURRENT (Tj=tC) GATE CURRENT (Tj=25C) 100 (%) 10-2 10-2 2 3 5 710-12 3 5 7 100 2 3 5 7 101 2 3 5 7 102 101 7 5 3 2 100 -60 -40 -20 0 20 40 60 80 100 120 140 GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE #1 #2 TYPICAL EXAMPLE IGT (25C) # 1 32A # 2 9A 120 100 80 60 40 See 3 20 1.0 ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, 0.9 DISTRIBUTION 0.8 TYPICAL EXAMPLE 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120 140 160 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) JUNCTION TEMPERATURE (C) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 200 180 160 140 120 100 80 60 40 20 0 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s) AVERAGE POWER DISSIPATION (W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) TRANSIENT THERMAL IMPEDANCE (C/W) 102 7 5 3 2 GATE CURRENT VS. JUNCTION TEMPERATURE 180 140 TYPICAL EXAMPLE JUNCTION TEMPERATURE (C) 200 160 103 7 5 3 2 GATE CURRENT (mA) GATE TRIGGER VOLTAGE (V) GATE VOLTAGE (V) 7 5 3 2 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) 100 (%) GATE CHARACTERISTICS MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 0.8 0.7 0.6 120 0.5 60 0.4 180 90 = 30 0.3 0.2 360 0.1 0 0 0.1 0.2 RESISTIVE, INDUCTIVE LOADS 0.3 0.4 AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR02AM-8A LOW POWER USE 140 120 360 100 80 60 40 = 30 60 90 120 20 0 AMBIENT TEMPERATURE (C) RESISTIVE, INDUCTIVE LOADS NATURAL CONVECTION 0 0.1 0.2 180 0.4 0.3 MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 0.8 0.7 0.6 90 0.5 60 0.4 = 30 0.3 0.2 0.1 360 0 0 0.1 0.2 RESISTIVE LOADS 0.5 0.3 0.4 AVERAGE ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 0.8 140 120 360 RESISTIVE LOADS NATURAL CONVECTION 100 80 60 40 20 0 = 30 0 0.1 60 0.2 120 90 180 0.3 0.4 0.5 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 AVERAGE ON-STATE CURRENT (A) 270 120 0.5 60 0.4 360 0.2 0.1 0 90 = 30 0.3 0 0.1 0.2 RESISTIVE, INDUCTIVE LOADS 0.5 0.3 0.4 AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) = 30 60 90 120 180 270 DC 180 0.6 160 BREAKOVER VOLTAGE (T j = tC) BREAKOVER VOLTAGE (T j = 25C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS NATURAL 360 120 CONVECTION 100 DC 0.7 AVERAGE ON-STATE CURRENT (A) AMBIENT TEMPERATURE (C) 180 120 AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AVERAGE POWER DISSIPATION (W) GLASS PASSIVATION TYPE 120 140 TYPICAL EXAMPLE RGK = 1k 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) Feb.1999 MITSUBISHI SEMICONDUCTOR THYRISTOR CR02AM-8A LOW POWER USE 80 60 40 20 0 10-1 2 3 5 7100 2 3 5 7101 2 3 5 7 102 80 60 #2 40 TYPICAL EXAMPLE # 1 IGT (25C) = 10A 20 # 2 IGT (25C) = 66A Tj = 125C, RGK = 1k #1 0 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 HOLDING CURRENT VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 Tj = 25C IH (25C) = 1mA IGT (25C) = 25A DISTRIBUTION ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, TYPICAL EXAMPLE 500 400 #1 TYPICAL EXAMPLE IGT (25C) IH (1k) # 1 13A 1.6mA 1.8mA # 2 59A 300 #2 200 100 Tj = 25C 0 10-1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (k) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 100 (%) JUNCTION TEMPERATURE (C) 120 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) 100 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) 10-1 -60 -40 -20 0 20 40 60 80 100120 140 REPETITIVE PEAK REVERSE VOLTAGE (Tj=tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25C) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 120 GATE TO CATHODE RESISTANCE (k) 100 (%) HOLDING CURRENT (mA) BREAKOVER VOLTAGE (RGK = rk) BREAKOVER VOLTAGE (RGK = 1k) 100 TYPICAL EXAMPLE Tj = 125C BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 HOLDING CURRENT (RGK = rk) HOLDING CURRENT (RGK = 1k) 100 (%) BREAKOVER VOLTAGE VS. GATE TO CATHODE RESISTANCE 100 (%) GLASS PASSIVATION TYPE 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 103 7 5 4 3 2 TYPICAL EXAMPLE IGT (25C) #1 10A #2 66A #2 #1 102 7 5 4 3 2 Tj = 25C 101 100 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) Feb.1999