12 5484/7484 16-Bit Read. Write Memory Schottky TLL High- Speed TTL Low-Power Schottky TTL Stand TTL Low-Power TTL. Package Package Package Package P. . . i . . . ackage Device Type Device Type Device Type Device Type Device Type g c|{ P| MIcF c| Pi mick Cc] P| Mice] c\P(MIcr ciPimic Tl SNS484A Ja wa) | - SN7484A JaIND | t FAIRCHILD : MC5484 gq I MOTOROLA : MC 7484 LOP SiE S FLOI2t a MITSUBISHI MC532B4 Pa NEC HP B2084 Dw Electrical Chareristics SN5484A,/SN7484A absolute maximum ratings over operating Pin Assignment (Top View) free-air temperature range Supply voltage, Yoo Vv Operating free-air | SNSa = 55C 10 125C Input voltage 5.5V temperature range [SN78 a*Cto 70C @ interemmer voltage (see Note) $.5V Storage temperature range - 68C to 150 C High-level output voltage 5.5V recommended operating conditions , WRITE SENSE WRITE ADDRESS SNSAB4I SNTABAF UNIT Way UBr 77 O~ GND OiA} OlBy v4 MIN NOM MAX | MIN NOM MAX Supply voltage. Voc 4.5 5 5.5) 4.75 5 5.25] Vv High-level output voltage, Vou 5.5 5.5[ Vv Low-level output current. low 20 40 | mA Width of write pulse, tw (write) 20 20 as Address input setup time. tsetyp o 0 as Operating free-air temperature, Tp s5 $25, 0 70 c electrical charistics over recommended operating free-air temperature range PARAMETER * TEST CONDITIONS t MIN TYP MAX] UNIT VoH High-level voltage at agy input 2 v Low-ievel to prevent 0.8 8 v voltage writing + 1 Vv a te at address {to prevent x3 2 XY Vee YT v2 V3. inputs sensing ADDAESS ADDRESS Vip Low-level voltage at write input | Vv v Input clamp voltage Vv =MIN. y= 4A2ma 1.5 v logic: See logic diagram ! oc 1 9 19H High-level output current Vog=MIN. VoH=5.5V 250 [ nA Vo_ Low-level output voltage Voo=MIN. ig, =MAX oat v input current at Write 1 Y }--4 VOC =MAX, V,75.5V - Fo maximum input Address 3 i High-level input Write Veg=MAX. Vie 2.aVv 40 nN current Address | VOG=MAX, Vir 2.4V 400 I Low-level input Write Veg=MAX. vy=0.aV = 8T a current Address tt . . Voc =MAX, [SN5a 70 Logic Diagram loc Supply current Ail inputs at_0V [SN74 65 | mA Vog= 5V. All inputs at OV 45 69 Warai a8) Worn) Wore) CU = 30pF 13 tsR ] iow =2000F ia 30] oN Ng oN 6 C_=300F {SN54 uM 19 xa. xa v2! xa_ 3 xa_ya \ t SN74& 12 20 PHL { SN54 47 26 o | = Nea} and a xteyt CL = 2000F Tenza 27 ; Na] NJ Nol EN | Isnsa 13 zo] " xa va Cy =30pF + b = SN74 12 19 > tPLH Yoo 8V> SN54 27 40 Ta = 28C = fF ey NI 5 LOCATION a CL 20F TST 18 27 oN Q ry mS A SNS4 10 18 x2_vy x2 Ya $ * = F 4 ADDRESSED ap ema (oe eer sna ul ig \e/ (PHL lok - = x2 c SN54 16 25 : =e Sy Ss Y |... [ot 20007 [sna 1t_28 | ag P ry senses X (thre c, 30pr [SNS 13 20 _- el) xi v3 xy_va ENSE x dane { oe SN74 13 20 I tPLH | 01 I c 200pF ISN54 27 40 | b= 2000 _|snva 13 28 vs vo vs 3 ve 64 16- BIT ACTIVE- ELEMENT MEMORIES t For rconditions shown as MIN or MAX, use appropriate value specified under recmmended PAI typical values are at Vog = SV. Ta= 25C #F er conditions shown as MIN or MAX, use the appropriate value specified under recommend *!SR= Sense recovery time after writing tPHL =Propagation delay time, nigh-to-iow -level output oper ating conditions. led operating conditions for the aoplicable device type tp_H=Propagation delay time, low-to-high-level output