NTE6410 - NTE ELECTRONICS - Datasheet.Live

NTE6410

Unijunction Transistor (UJT)

Description:

The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and

timing circuits, sensing circuits and thyristor trigger circuits.

Absolute Maximum Ratings: (TA = +25°C unless other specified)

RMS Power Dissipation, PD300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Derate Above 25°C 3.0mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

RMS Emitter Current, IE50mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Peak–Pulse Emitter Current (Note 1), IE1.5A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter Reverse Voltage, VB2E 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Interbase Voltage (Note 2), VB2B1 35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature Range, TJ –65° to +125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Note 1. Duty cycle ≤ 1%, PRR = 10 PPS

Note 2. Based upon power dissipation at TA = +25°C

Electrical Characteristics: (TA = +25°C unless other specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Intrinsic Standoff Ratio ηVB2B1 = 10V, Note 3 0.70 – 0.85

Interbase Resistance RBB 4.0 6.0 9.1 kΩ

Interbase Resistance Temperature Coefficient αRBB 0.1 – 0.9 %/°C

Emitter Saturation Voltage VBE1(sat) VB2B1 = 10 V, IE = 50mA, Note 4 – 2.5 – V

Modulated Interbase Current IB2(Mod) VB2B1 = 10V, IE = 50mA – 15 – mA

Emitter Reverse Current IEB2O VB2E = 30V, IB1 = 0 –0.005 1.0 µA

Peak–Point Emitter Current IPVB2B1 = 25V – 1.0 5.0 µA

Valley–Point Current IVVB2B1 = 20V, RB2 = 1 00Ω, Note 4 4.0 7.0 – mA

Base–One Peak Pulse Voltage VOB1 5.0 8.0 – V

Note 3. Intrinsic standoff ratio, is defined in terms of peak–point voltage, VP, by means of the equa-

tion: VP = η VB2B1 VF, where VF is approximately 0.49 volts at +25°C @ IF = 10µA and de-

creases with temperature at approximately 2.5mV/°C. Components R1, C1, and the UJT

form a relaxation oscillator, the remaining circuitry serves as a peak–voltage detector. The

forward drop of Diode D1 compensates for VF. To use, the “call” button is pushed, and R3

is adjusted to make the current meter, M 1, read full scale. When the “call” button is released,

the value of η is read directly from the meter, if full scale on the meter reads 1.0.

Note 4. Use pulse techniques: PW ∼ 300µs, duty cycle ≤ 2.0% to avoid internal heating, which may

result in erroneous readings.