GFD1300-550 1300 nm InGaAs PIN Photodiode FEATURES * InGaAs planar PIN photodiode giving a minimum responsivity of 6 mV/W at a 1300 nm wavelength * Typical bandwidth of 100 MHZ * Operating temperature-10C to +65C Opho_225.tif DESCRIPTION The GFD1300-550 is an InGaAs photodiode with integrated amplifier for use in the 1300 nm to 1500 nm wavelength range. OUTLINE DIMENSIONS in inches (mm) The load capacitance acts as an external filter allowing the sensitivity/bandwidth compromise to be optimised by the user. FIBER54.cdr Pinout 1. VUU 3. VU (OV, Case) 2. Output A (Data) 4. Output B (Data) Notes 1 All dimensions are in millimetres. Tolerances are 0.10 mm unless otherwise stated. 2 Receptacle illustrated with typical active device installed. 3 Device alignment to fibre tested with AT&T ST2 connector. 4 Pin 3 is approx. 1 mm shorter than pins 1, 2 and 4. Minimum pin length is 12 mm. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 513 GFD1300-550 1300 nm InGaAs PIN Photodiode ELECTRO-OPTICAL CHARACTERISTICS (TU = 25C unless otherwise stated) PARAMETER SYMBOL MIN R 6 Sensitivity Input Power range for 10ox BER at 50 Mbit/s Input Power range for 10ox BER at 100 Mbit/s Power Supply Current Bandwidth Range of spectral sensitivity Transimpedance Differential output impedance Photodiode responsivity Photodiode dark cuurent Photodiode capacitance IUU f eae RI I/I CI TYP -35 -32 5 1200 8 300 0.75 MAX -10 -10 10 100 1300 10 1600 12 500 5 1 UNITS TEST CONDITIONS mV/W eae = 1300 nm, P = 1W VIU = -5V dBm eae = 1300 nm, VIU = -5V mA VUU = -5 V MHZ eae = 1300 nm, VIU = -5V nm ki i A/W nA pf ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise noted) Supply voltage -7V Supply voltage (VUU - Vaa) -4.75 to -5.46 V Storage temperature -40 to +85C Operating temperature -20 to +70C Lead solder temperature 260C, 10 s, 2 mm from core Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. 514 h Honeywell reserves the right to make changes in order to improve design and supply the best products possible. GFD1300-550 1300 nm InGaAs PIN Photodiode ORDER GUIDE Description Catalog Listing Standard PIN photodiode, TO-18 case GFD1300-550 CAUTION The inherent design of this component causes it to be sensitive to electrostatic discharge (ESD). To prevent ESD-induced damage and/or degradation to equipment, take normal ESD precautions when handling this product. Honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 515