GFD1300-550
1300 nm InGaAs PIN Photodiode
OUTLINE DIMENSIONS in inches (mm)DESCRIPTION
The GFD1300-550 is an InGaAs photodiode with
integrated amplifier for use in the 1300 nm to 1500 nm
wavelength range.
The load capacitance acts as an external filter allowing
the sensitivity/bandwidth compromise to be optimised by
the user.
FEATURES
InGaAs planar PIN photodiode giving a minimum
responsivity of 6 mV/µW at a 1300 nm wavelength
•
Typical bandwidth of 100 MHZ
•
Operating temperature-10¡C to +65¡C
•
FIBER54.cdr
Opho_225.tif
Pinout
1. VÙÙ
2. Output A (Data)
3. VÙ° (OV, Case)
4. Output B (Data)
Notes
1 All dimensions are in millimetres. Tolerances are ± 0.10 mm
unless otherwise stated.
2 Receptacle illustrated with typical active device installed.
3 Device alignment to fibre tested with AT&T ST2 connector.
4 Pin 3 is approx. 1 mm shorter than pins 1, 2 and 4. Minimum
pin length is 12 mm.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible. h513
GFD1300-550
1300 nm InGaAs PIN Photodiode
TYP
MIN
(TÙ = 25¡C unless otherwise stated)
UNITS TEST CONDITIONSPARAMETER SYMBOL MAX
ELECTRO-OPTICAL CHARACTERISTICS
êæ = 1300 nm
,
P² = 1
µ
WSensitivit
y
R mV/
µ
W6
VÏÙ = -5V
êæ = 1300 nm
,
VÏÙ = -5VIn
p
ut Power ran
g
e for 10ø× BER at 50 Mbit/s dBm-35 -10
In
p
ut Power ran
g
e for 10ø× BER at 100 Mbit/s -32 -10
VÙÙ = -5 VPower Su
pp
l
y
Current IÙÙ mA510
êæ = 1300 nm
,
VÏÙ = -5VBandwidth f MHZ100
Ran
g
e of s
p
ectral sensitivit
y
êæ nm1200 1300 1600
Transim
p
edance k ì81012
Differential out
p
ut im
p
edance ì300 500
Photodiode res
p
onsivit
y
Rΰ A/W0.75
Photodiode dark cuurent I°/ΰ nA5
Photodiode ca
p
acitance Cΰ
p
f1
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25¡C unless otherwise noted)
-7VSupply voltage
-4.75 to -5.46 VSupply voltage (VÙÙ - Våå)
-40 to +85¡CStorage temperature
-20 to +70¡COperating temperature
260¡C, 10 s, 2 mm
from core
Lead solder temperature
Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect
reliability.
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
514 h
GFD1300-550
1300 nm InGaAs PIN Photodiode
Description Catalog Listing
ORDER GUIDE
GFD1300-550Standard PIN photodiode, TO-18
case
The inherent design of this component causes
it to be sensitive to electrostatic discharge
(ESD). To prevent ESD-induced damage
and/or degradation to equipment, take normal
ESD precautions when handling this product.
C
A
U
TI
O
N
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible. h515
