G E SOLID STATE o1 de ff sa7soa1 Optoelectronic Specifications Li ght Detector Planar Silicon Photo Transistor BPW36, BPW37 The GE Solid State BPW36 and BPW37 are highly sensitive NPN Planar Silicon Phototransistors. They are housed in a TO-18 style hermetically sealed package with lens cap. These devices are ideal for use in optoelectronic sensing applications where both high sensitivity and fast switching speeds are important parameters. Generally only the collector and emitter leads are used; a base lead is provided, however, to control sensitivity and gain of the device. absolute maximum ratings: (25C-unless otherwise specified) Voltages Dark Characteristics Collector to Emitter Voltage VcEo 45 volts Collector to Base Voltage Vcpo 45 yolts Emitter to Base Voltage Vepo 5 volts Currents Light Current IL 50 mA . Dissipations Power Dissipation (Ta = 25C)* Py 300 mW Power Dissipation (To = 25C)** Pr 600 mW Temperatures Junction Temperature Ty +150 c Storage Temperature Tsrg 65 to +150 c *Derate 2.4 mW/C above 25C ambient **Derate 4,8 mW/C above 25C case - electrical characteristics: (25C unless otherwise specified) BPW36 BPW37 STATIC CHARACTERISTICS MIN. MAX. MIN. Light Current (Voce = 5V, Eet = 10mW/cm?) om 6 3 mA Dark Current (Vcp = 10V, Ee = 0) Ip 100 nA Emitter-Base Breakdown Voltage (I, = 100UA, Ic = 0, Ee = 0) ViprjeBo = 5 5 V Collector-Base Breakdown Voltage . (ig = 100UA, Ie = 0, Ee = 0) Viprjycpo 45 45 V Collector-Emitter Breakdown Voltage (I, = 10mA, Ee = 0) Visrjceo 45 45 V Saturation Voltage (I, = 10mA, I, = ImA) VcE(saT) 04 Vv Turn-On Time (Vc_ = 10V, I, = 2mA, ton 8 usec Turn-Off Time (R, = 100Q) tort 7 sec Ee = Radiation Flux Density, Radiation source is an unfiltered tungsten filament bulb at 2870K color temperature. COLLECTOR CORMECTES TO CASE C(3) tz) TU-8S em NOTES 1. Measured from maximum diameter of device. 2. Leads hoving maximum diameter .021" (533mm! measuredin gauging plane.054" +00l" GO0{I37 + 025000mm) below the reference plone of the device shall be within .CO7"(.276mm} their true position relative to maximum width fab. 3 From centerline tab_ NOTE: A GaAs source of 3.0 mW/cm? is approximately equivalent to a tungsten source, at 2870K, of 10 mW/jem?. 336 oowei2 4 fiG SOLID STATE on ve sa7sosi cowsai3 0 BPW36, BPW37 __ : Optoelectronic Specifications THM RS TYPICAL ELECTRICAL CHARACTERISTICS . T_-NORMALIZED LIGHT CURRENT Ol ol | l lo 00 Vpp7 COLLECTOR TO EMITTER VOLTAGE LIGHT CURRENT VS COLLECTOR TO EMITTER VOLTAGE IL-NORMALIZED LIGHT CURRENT oO. -50 0 50 (00 150 T+ TEMPERATURE - C NORMALIZED LIGHT CURRENT VS TEMPERATURE 3 a Ip NORMALIZED DARK CURRENT 25 50 75 too 125 iso T- TEMPERATURE C DARK CURRENT VS TEMPERATURE ton and tor-NORMALIZED TURN ON AND TURN OFF TIMES TL -NORMALIZED LIGHT GURRENT ol .0 T1- NORMALIZED LIGHT CURRENT To Vor SV Eet = 20 mW/cm? L 0 Hf TOTAL IRRADIANCE IN mW/om2 NORMALIZED LIGHT CURRENT VS RADIATION REXtkD i 10 lo I_-OUTPUT CURRENT-mA SWITCHING TIMES VS OUTPUT CURRENT Coxl BPW36 OR TO oaxl4 =IOmA VcE #10 VOLTS IL=1OOBA T= 25C iv 55 35 65 65 05 y_TeMpERATURE-*c NORMALIZED LIGHT CURRENT VS TEMPERATURE Both Emitter (CQX 14) and Detector (BPW36 or BPW37) at Same Temperature 337