Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs LJxx08xx & QJxx08xHx Series RoHS Description This 8 A High Temperature Alternistor Triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls, lighting controls, and static switching relays. Sensitive type components guarantee gate control in Quadrants I & IV as needed for digital control circuitry. Alternistor type components only operate in quadrants I, II, & III and are used in circuits requiring high dv/dt capability. Features & Benefits Main Features Symbol Value Unit IT(RMS) 8 A VDRM / VRRM 400 or 600 V IGT (Q1) 10 to 35 mA * 150C maximum junction temperature * Voltage capability up to 600V * Surge capability up to 84A at 60Hz half cycle * Solid-state switching eliminates arcing or contact bounce that create voltage transients Schematic Symbol MT2 MT1 G * Restricted (or limited) RFI generation, depending on activation point of sine wave * Requires only a short gate activation pulse in each half-cycle * Halogen free and RoHS compliant * No contacts to wear out from reaction of switching events Applications Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are AC solid-state switches, light dimmers, power tools, home/brown goods and white goods appliances. Alternistor Triacs (no snubber required) are used in applications with high inductive loads requiring the highest commutation performance. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18 Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs Absolute Maximum Ratings -- Sensitive Triac (4 Quadrants) Symbol Parameter Value VDSM/VRSM Peak non-repetitive blocking voltage IT(RMS) RMS on-state current (full sine wave) LJxx08Vy/LJxx08Dy PW=100 s ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25C) I2t I2t Value for fusing di/dt Critical rate of rise of on-state current IG = 50mA with 0.1s rise time f = 60 Hz IGTM Peak gate trigger current tp=20s 700 V TC = 130C 8 A f = 50 Hz t = 20 ms 70 f = 60 Hz t = 16.7 ms 84 tp = 8.3 ms Average gate power dissipation PG(AV) Unit A 29 A2s TJ = 150C 150 A/s TJ = 150C 4 A TJ = 150C 0.3 W Tstg Storage temperature range -40 to 150 C TJ Operating junction temperature range -40 to 150 C Note: xx=voltage/10, y = sensitivity Absolute Maximum Ratings -- Alternistor (3 Quadrants) Symbol Parameter VDSM/VRSM Peak non-repetitive blocking voltage PW=100 s IT(RMS) RMS on-state current (full sine wave) QJxx08VHy/QJxx08DHy ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25C) I2t I2t Value for fusing di/dt Critical rate of rise of on-state current IGTM Peak gate trigger current tp=20s PG(AV) Average gate power dissipation TJ = 150C Value Unit 700 V TC = 120C 8 A f = 50 Hz t = 20 ms - 70 f = 60 Hz t = 16.7 ms - 84 tp = 8.3 ms - 29 A2s f = 60 Hz TJ = 150C 70 A/s TJ = 150C - 4 A IGT = 10mA - 0.4 W A Tstg Storage temperature range -40 to 150 C TJ Operating junction temperature range -40 to 150 C Note: xx=voltage/10, y = sensitivity Electrical Characteristics (TJ = 25C, unless otherwise specified) -- Sensitive Triac (4 Quadrants) Symbol IGT Test Conditions VD = 12V RL = 60 VGT VGD VD = VDRM RL = 3.3 k TJ = 150C IH dv/dt Quadrant Unit I - II - III IV MAX. 10 20 mA ALL MAX. 1.3 V ALL MIN. 0.15 V MAX. 25 mA IT = 100mA VD = VDRM Gate Open TJ = 150C LJxx08x8 400V 600V TYP. 80 50 V/s (dv/dt)c (di/dt)c = 4.3 A/ms TJ = 150C TYP. 2 V/s tgt IG = 100mA PW = 15s IT = 11.3 A(pk) TYP. 12 s Note: xx=voltage/10, x = package, (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18 Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs Electrical Characteristics (TJ = 25C, unless otherwise specified) -- Alternistor Triac (3 Quadrants) Symbol Test Conditions IGT Quadrant VD = 12V RL = 60 VGT QJxx08xH3 QJxx08xH4 Unit 10 35 mA I - II - III MAX. I - II - III MAX. 1.3 V I - II - III MIN. 0.15 V VGD VD = VDRM RL = 3.3 k TJ = 150C IH IT = 100mA MAX. dv/dt VD = VDRM Gate Open TJ = 150C MIN. (dv/dt)c (di/dt)c = 4.3 A/ms TJ = 150C tgt IG = 100mA PW = 15s IT = 11.3 A(pk) 25 35 mA 400V 150 350 600V 100 250 MIN. 15 20 V/s TYP. 10 10 s V/s Note: xx=voltage/10, x = package Static Characteristics Symbol Test Conditions VTM Value Unit 1.50 V TJ = 25C 10 A TJ = 125C 0.5 TJ = 150C 3 ITM = 11.3A tp = 380 s LJxx08xy IDRM VDRM = VRRM IRRM MAX. TJ = 25C QJxx08xHy MAX. mA 10 TJ = 125C 0.5 TJ = 150C 3 A mA Note: xx=voltage/10, x=package, y = sensitivity Thermal Resistances Symbol Parameter Value Unit R(JC) Junction to case (AC) 1.5 C/W R(J-A) Junction to ambient 70 C/W Figure 2: N ormalized DC Gate Trigger Current for All Quadrants vs. Junction Temperature Figure 1: Definition of Quadrants ALL POLARITIES ARE REFERENCED TO MT1 1.8 MT2 POSITIVE (Positive Half Cycle) 1.6 (+) I GT GATE MT1 I GT I GT GATE (+) MT1 REF REF QII QI QIII QIV MT2 (-) MT1 - + IGT MT2 1.0 0.8 0.6 0.2 MT1 REF NOTE: Alternistors will not operate in QIV Note: Alternistors will not operate in QIV (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18 1.2 0.4 I GT GATE MT2 NEGATIVE (Negative Half Cycle) IGT (TJ = 25C) 1.4 I GT GATE REF MT2 IGT (-) + Ratio of MT2 0 -40 -15 10 35 60 85 110 Junction Temperature (TJ)- C 135 150 Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: N ormalized DC Gate Trigger Voltage for All Quadrants vs. Junction Temperature 1.6 VGT Ratio of 0.8 VGT (TJ = 25C) 1.4 1.2 Ratio of IH IH (TJ = 25C) 1.6 1.2 1.0 0.8 0.6 0.4 0.4 0.2 0 -40 -15 10 35 60 85 110 0 150 135 -40 -15 10 Junction Temperature (TJ)- C 60 85 110 135 150 Figure 6: M aximum Allowable Case Temperature vs. On-State Current 8 160 7 150 Maximum Allowable Case Temperature (TC) - C Average On-State Power Dissipation (PD(AV)) - Watts Figure 5: Power Dissipation (Typical) vs. RMS On-State Current 6 5 4 3 2 QJxx08VHy/ QJxx08DHy 140 130 120 LJxx08Vy/ LJxx08Dy 110 100 1 90 0 0 2 4 6 8 Figure 7: On-State Current vs. On-State Voltage (Typical) 20 18 16 14 12 10 8 6 4 2 0 0.6 0.8 1 1.2 1.4 1.6 Postitive or Negative Instantaneous On-State Voltage (vT) - Volts (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18 80 0 2 4 6 8 RMS On-State Current (IT(RMS)) - Amps RMS On-State Current (IT(RMS)) - Amps Postitive or Negative Instantaneous On-State Current (iT) - Amps 35 Junction Temperature (TJ)- C 1.8 10 Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs Figure 8: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-Repetitive) On-State Current (ITSM) - Amps 100 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [IT(RMS)]: Maximum Rated Value at Specified Case Temperature Notes: 1. G ate control may be lost during and immediately following surge current interval. 2. O verload may not be repeated until junction temperature has returned to steady-state rated value. 10 1 1 10 100 1000 Surge Current Duration- Full Cycles Soldering Parameters Pb - Free assembly Pre Heat - Temperature Min (Ts(min)) 150C - Temperature Max (Ts(max)) 200C - Time (min to max) (ts) 60 - 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5C/second max TS(max) to TL - Ramp-up Rate 5C/second max Reflow - Temperature (TL) (Liquidus) 217C - Time (tL) 60 - 150 seconds Peak Temperature (TP) 260+0/-5 C Time within 5C of actual peak Temperature (tp) 20 - 40 seconds Ramp-down Rate 5C/second max Time 25C to peak Temperature (TP) 8 minutes Max. Do not exceed 280C Physical Specifications Terminal Finish 100% Matte Tin-plated Body Material UL Recognized compound meeting flammability rating V-0. Terminal Material Copper Alloy Design Considerations Careful selection of the correct component for the application's operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the component rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18 tP TP Temperature Reflow Condition Ramp-up TL tL TS(max) Preheat TS(min) 25 Ramp-do Ramp-down tS time to peak temperature Time Environmental Specifications Test Specifications and Conditions AC Blocking (VDRM) MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 150C for 1008 hours Temperature Cycling MIL-STD-750, M-1051, 100 cycles; -55C to +150C; 15-min dwell-time Temperature/ Humidity EIA / JEDEC, JESD22-A101 1008 hours; 160V - DC: 85C; 85% rel humidity High Temp Storage MIL-STD-750, M-1031, 1008 hours; 150C Low-Temp Storage 1008 hours; -40C Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs Dimensions -- TO-251AA (V-Package) -- V-PAK Through Hole TC MEASURING POINT E MT2 AREA: 0.040 IN2 Dimension H D 5.28 .208 J A 5.34 .210 B R P Q S K C MT1 L F MT2 GATE G I Inches Millimeters Min Typ Max Min Typ Max A 0.037 0.040 0.043 0.94 1.01 1.09 B 0.235 0.242 0.245 5.97 6.15 6.22 C 0.350 0.361 0.375 8.89 9.18 9.53 D 0.205 0.208 0.213 5.21 5.29 5.41 E 0.255 0.262 0.265 6.48 6.66 6.73 F 0.027 0.031 0.033 0.69 0.80 0.84 G 0.087 0.090 0.093 2.21 2.28 2.36 H 0.085 0.092 0.095 2.16 2.34 2.41 I 0.176 0.180 0.184 4.47 4.57 4.67 J 0.018 0.020 0.023 0.46 0.51 0.58 K 0.035 0.037 0.039 0.90 0.95 1.00 L 0.018 0.020 0.023 0.46 0.52 0.58 P 0.042 0.047 0.052 1.06 1.20 1.32 Q 0.034 0.039 0.044 0.86 1.00 1.11 R 0.034 0.039 0.044 0.86 1.00 1.11 S 0.074 0.079 0.084 1.86 2.00 2.11 Dimensions -- TO-252AA (D-Package) -- D-PAK Surface Mount MT2 E D 6.71 .264 5.28 .208 TC MEASURING POINT Dimension 6.71 .264 5.34 .210 C P Q MT1 GATE F MT2 1.60 .063 1.80 .071 AREA : 0.040 IN2 Connects to MT2 G 3 .118 I O L K M N (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18 J H 4.60 .181 Millimeters Typ Max Min Typ Max A 0.037 0.040 0.043 0.94 1.01 1.09 B 0.235 0.243 0.245 5.97 6.16 6.22 C 0.106 0.108 0.113 2.69 2.74 2.87 D 0.205 0.208 0.213 5.21 5.29 5.41 E 0.255 0.262 0.265 6.48 6.65 6.73 A B Inches Min F 0.027 0.031 0.033 0.69 0.80 0.84 G 0.087 0.090 0.093 2.21 2.28 2.36 H 0.085 0.092 0.095 2.16 2.33 2.41 I 0.176 0.179 0.184 4.47 4.55 4.67 J 0.018 0.020 0.023 0.46 0.51 0.58 K 0.035 0.037 0.039 0.90 0.95 1.00 L 0.018 0.020 0.023 0.46 0.51 0.58 M 0.000 0.000 0.004 0.00 0.00 0.10 N 0.021 0.026 0.027 0.53 0.67 0.69 O 0 0 5 0 0 5 P 0.042 0.047 0.052 1.06 1.20 1.32 Q 0.034 0.039 0.044 0.86 1.00 1.11 Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs Product Selector Part Number Voltage Gate Sensitivity Quadrants Type Package 20mA Sensitive Triac TO-252 D-PAK 10mA 20mA Sensitive Triac TO-251 V-PAK x 10mA - Alternistor Triac TO-252 D-PAK x x 10mA - Alternistor Triac TO-251 V-PAK QJxx08DH4 x x 35mA - Alternistor Triac TO-252 D-PAK QJxx08VH4 x x 35mA - Alternistor Triac TO-251 V-PAK 400V 600V I - II - III IV LJxx08D8 x x 10mA LJxx08V8 x x QJxx08DH3 x QJxx08VH3 Note: xx=voltage/10 Packing Options Part Number Marking Weight Packing Mode Base Quantity LJxx08D8TP LJxx08D8 0.3g Tube Pack 750(75 per tube) LJxx08D8RP LJxx08D8 0.3g Embossed Carrier 2500 LJxx08V8TP LJxx08V8 0.4g Tube Pack 750(75 per tube) QJxx08DH3TP QJxx08DH3 0.3g Tube Pack 750(75 per tube) QJxx08DH3RP QJxx08DH3 0.3g Embossed Carrier 2500 QJxx08VH3TP QJxx08VH3 0.4g Tube Pack 750(75 per tube) QJxx08DH4TP QJxx08DH4 0.3g Tube Pack 750(75 per tube) QJxx08DH4RP QJxx08DH4 0.3g Embossed Carrier 2500 QJxx08VH4TP QJxx08VH4 0.4g Tube Pack 750(75 per tube) Note: xx=voltage/10 Part Numbering System Part Marking System QJ 60 08 V 8 LJ6008V8 COMPONENT TYPE LJ : HT Sensitive Triac QJ : HT Triac or Alternistor VOLTAGE RATING 40 : 400V 60 : 600V CURRENT 08: 8A (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18 SENSITIVITY & TYPE Sensitive Triac: 8 : 10 mA (QI, II, III) 20 mA (QIV) Alternistor Triac: H3 : 10 mA (QI, II, III) H4 : 35 mA (QI, II, III) PACKAGE TYPE V : TO-251 (VPAK) D : TO-252 (DPAK) YMLDD (R) Date Code Marking Y:Year Code M: Month Code L: Location Code DD: Calendar Code Thyristors 8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs TO-252 Embossed Carrier Reel Pack (RP) Specifications Meets all EIA-481-2 Standards * Cover tape 0.512 (13.0) Arbor Hole Dia. 0.315 (8.0) MT1 XXXXXX DC 0.059 Dia (1.5) XX DC XX XXXXXX * DC 0.524 (13.3) XX 0.63 (16.0) XXXXXX Gate XXXXXX 0.157 (4.0) MT2 12.99 (330.0) Dimensions are in inches (and millimeters). 0.64 (16.3) Direction of Feed Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics. (c)2018 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 12/04/18