©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
LJxx08xx & QJxx08xHx Series
Main Features
Description
This 8 A High Temperature Alternistor Triac solid state
switch series is designed for AC switching and phase
control applications such as motor speed and temperature
modulation controls, lighting controls, and static switching
relays.
Sensitive type components guarantee gate control in
Quadrants I & IV as needed for digital control circuitry.
Alternistor type components only operate in quadrants I, II,
& III and are used in circuits requiring high dv/dt capability.
Symbol Value Unit
IT(RMS) 8 A
VDRM/VRRM 400 or 600 V
IGT (Q1) 10 to 35 mA
Features & Benefits
150°C maximum junction
temperature
Voltage capability up
to 600V
Surge capability up
to 84A at 60Hz half cycle
Solid-state switching
eliminates arcing or
contact bounce that
create voltage transients
No contacts to wear out
from reaction of switching
events
Restricted (or limited) RFI
generation, depending on
activation point of
sine wave
Requires only a short gate
activation pulse in each
half-cycle
Halogen free and RoHS
compliant
Applications
Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
Typical applications are AC solid-state switches, light
dimmers, power tools, home/brown goods and white
goods appliances.
Alternistor Triacs (no snubber required) are used in
applications with high inductive loads requiring the highest
commutation performance.
Internally constructed isolated packages are offered for
ease of heat sinking with highest isolation voltage.
Schematic Symbol
MT2 MT1
G
RoHS
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Absolute Maximum Ratings — Sensitive Triac (4 Quadrants)
Symbol Parameter Value Unit
VDSM/VRSM Peak non-repetitive blocking voltage PW=100 μs 700 V
IT(RMS) RMS on-state current (full sine wave) LJxx08Vy/LJxx08Dy TC = 130°C 8 A
ITSM
Non repetitive surge peak on-state current
(full cycle, TJ initial = 25°C)
f = 50 Hz t = 20 ms 70 A
f = 60 Hz t = 16.7 ms 84
I2t I2t Value for fusing tp = 8.3 ms 29 A2s
di/dt Critical rate of rise of on-state current
IG = 50mA with 0.1µs rise time f = 60 Hz TJ = 150°C 150 A/μs
IGTM Peak gate trigger current tp=20μs TJ = 150°C 4 A
PG(AV) Average gate power dissipation TJ = 150°C 0.3 W
Tstg Storage temperature range -40 to 150 °C
TJOperating junction temperature range -40 to 150 °C
Note: xx=voltage/10, y = sensitivity
Symbol Parameter Value Unit
VDSM/VRSM Peak non-repetitive blocking voltage PW=100 μs 700 V
IT(RMS) RMS on-state current (full sine wave) QJxx08VHy/QJxx08DHy TC = 120°C 8 A
ITSM
Non repetitive surge peak on-state current
(full cycle, TJ initial = 25°C)
f = 50 Hz t = 20 ms - 70
A
f = 60 Hz t = 16.7 ms - 84
I2t I2t Value for fusing tp = 8.3 ms - 29 A2s
di/dt Critical rate of rise of on-state current f = 60 Hz TJ = 150°C 70 A/μs
IGTM Peak gate trigger current tp=20μs TJ = 150°C - 4 A
PG(AV) Average gate power dissipation TJ = 150°C IGT = 10mA - 0.4 W
Tstg Storage temperature range -40 to 150 °C
TJOperating junction temperature range -40 to 150 °C
Note: xx=voltage/10, y = sensitivity
Absolute Maximum Ratings — Alternistor (3 Quadrants)
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Sensitive Triac (4 Quadrants)
Symbol Test Conditions Quadrant LJxx08x8 Unit
IGT VD = 12V RL = 60 Ω
I – II – III
IV MAX. 10
20 mA
VGT ALL MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ TJ = 150°C ALL MIN. 0.15 V
IHIT = 100mA MAX. 25 mA
dv/dt VD = VDRM Gate Open TJ = 150°C 400V TYP. 80 V/μs
600V 50
(dv/dt)c (di/dt)c = 4.3 A/ms TJ = 150°C TYP. 2 V/μs
tgt IG = 100mA PW = 15µs IT = 11.3 A(pk) TYP. 12 μs
Note: xx=voltage/10, x = package,
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Electrical Characteristics (TJ = 25°C, unless otherwise specified) Alternistor Triac (3 Quadrants)
Symbol Test Conditions Quadrant QJxx08xH3 QJxx08xH4 Unit
IGT VD = 12V RL = 60 Ω
I – II – III MAX. 10 35 mA
VGT I – II – III MAX. 1.3 V
VGD VD = VDRM RL = 3.3 kΩ TJ = 150°C I – II – III MIN. 0.15 V
IHIT = 100mA MAX. 25 35 mA
dv/dt VD = VDRM Gate Open TJ = 150°C MIN. 400V 150 350 V/μs
600V 100 250
(dv/dt)c (di/dt)c = 4.3 A/ms TJ = 150°C MIN. 15 20 V/μs
tgt IG = 100mA PW = 15µs IT = 11.3 A(pk) TYP. 10 10 μs
Note: xx=voltage/10, x = package
Static Characteristics
Symbol Test Conditions Value Unit
VTM ITM = 11.3A tp = 380 µs MAX. 1.50 V
IDRM
IRRM
VDRM = VRRM
LJxx08xy
TJ = 25°C
MAX.
10 μA
TJ = 125°C 0.5 mA
TJ = 150°C 3
QJxx08xHy
TJ = 25°C 10 μA
TJ = 125°C 0.5 mA
TJ = 150°C 3
Note: xx=voltage/10, x=package, y = sensitivity
Thermal Resistances
Symbol Parameter Value Unit
Rθ(JC) Junction to case (AC) 1.5 °C/W
Rθ(J-A) Junction to ambient 70 °C/W
Figure 2: Normalized DC Gate Trigger Current for
All Quadrants vs. Junction Temperature
Junction Temperature (TJ)- ºC
Ratio of
IGT
IGT (TJ = 25°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-40-15 10 35 60 85 110135 150
Figure 1: Definition of Quadrants
Note: Alternistors will not operate in QIV
MT2 POSITIVE
(Positive Half Cycle)
MT2 NEGATIVE
(Negative Half Cycle)
NOTE: Alternistors will not operate in QIV
MT1
MT2
+ IGT
REF QII
MT1
IGT
GATE
MT2
REF
MT1
MT2
REF
MT1
MT2
REF
QI
QIV
QIII
ALL POLARITIES ARE REFERENCED TO MT1
(-)
IGT
GATE
(+)
IGT -
IGT
GATE
(-)
IGT
GATE
(+)
+
-
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Figure 3: Normalized DC Holding Current
vs. Junction Temperature
Figure 4: Normalized DC Gate Trigger Voltage for
All Quadrants vs. Junction Temperature
Junction Te mperature (T
J
)- ºC
Ratio of
I
H
I
H
(T
J
= 25°C)
0
0.4
0.8
1.2
1.6
-40-15 10 35 60 85 110135 150
Junction Temperature (T
J)- ºC
Ratio of VGT
VGT (T
J = 25°C)
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-40-15 10 35 60 85 110135 150
Figure 7: On-State Current vs. On-State Voltage
(Typical)
Postitive or Negative Instantaneous
On-State Voltage (v
T
) - Vo lts
Postitive or Negative Instantaneous
On-State Current (i
T
) - Amps
0
2
4
6
8
10
12
14
16
18
20
0.60.8 11.2 1.41.6 1.8
RMS On-State Current (IT(RMS)) - Amps
Average On-State
Power Dissipation (PD(AV)) - Watts
0
1
2
3
4
5
6
7
8
02468
Figure 5: Power Dissipation (Typical)
vs. RMS On-State Current
Figure 6: Maximum Allowable Case Temperature
vs. On-State Current
RMS On-State Current (I
T(RMS)
) - Amps
Maximum Allowable
Case Temperature (TC) - °C
80
90
100
110
120
130
140
150
160
0246810
QJxx08VHy/
QJxx08DHy
LJxx08Vy/
LJxx08Dy
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Surge Current Duration- Full Cycles
1
Peak Surge (Non-Repetitive)
On-State Current (I
TSM
) - Amps
110100 1000
10
100
Figure 8: Surge Peak On-State Current vs. Number of Cycles
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS On-State Current: [IT(RMS)]: Maximum Rated
Value at Specified Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state
rated value.
Soldering Parameters
Reflow Condition Pb – Free assembly
Pre Heat
- Temperature Min (Ts(min))150°C
- Temperature Max (Ts(max))200°C
- Time (min to max) (ts)60 – 180 secs
Average ramp up rate (Liquidus Temp)
(TL) to peak 5°C/second max
TS(max) to TL - Ramp-up Rate 5°C/second max
Reflow - Temperature (TL) (Liquidus) 217°C
- Time (tL)60 – 150 seconds
Peak Temperature (TP)260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)20 – 40 seconds
Ramp-down Rate 5°C/second max
Time 25°C to peak Temperature (TP)8 minutes Max.
Do not exceed 280°C
Time
Temperature
TP
TL
TS(max)
TS(min)
25
tP
tL
tS
time to peak temperature
Preheat
P
r
e
h
eat
Ramp-upRamp-up
Ramp-down
R
am
p
-
do
Physical Specifications
Terminal Finish 100% Matte Tin-plated
Body Material UL Recognized compound meeting
flammability rating V-0.
Terminal Material Copper Alloy
Design Considerations
Careful selection of the correct component for the applications
operating parameters and environment will go a long way toward
extending the operating life of the Thyristor. Good design practice
should limit the maximum continuous current through the main
terminals to 75% of the component rating. Other ways to ensure
long life for a power discrete semiconductor are proper heat
sinking and selection of voltage ratings for worst case conditions.
Overheating, overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting, soldering, and
forming of the leads also help protect against component damage.
Environmental Specifications
Test Specifications and Conditions
AC Blocking (VDRM)MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 150°C for 1008 hours
Temperature Cycling
MIL-STD-750, M-1051,
100 cycles; -55°C to +150°C; 15-min
dwell-time
Temperature/
Humidity
EIA / JEDEC, JESD22-A101
1008 hours; 160V - DC: 85°C; 85%
rel humidity
High Temp Storage MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage 1008 hours; -40°C
Resistance to
Solder Heat MIL-STD-750 Method 2031
Solderability ANSI/J-STD-002, category 3, Test A
Lead Bend MIL-STD-750, M-2036 Cond E
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Dimensions — TO-251AA (V-Package) — V-PAK Through Hole
Dimension Inches Millimeters
Min Ty p Max Min Ty p Max
A 0.037 0.040 0.043 0.94 1.01 1.09
B 0.235 0.242 0.245 5.97 6.15 6.22
C 0.350 0.361 0.375 8.89 9.18 9.53
D 0.205 0.208 0.213 5.21 5.29 5.41
E 0.255 0.262 0.265 6.48 6.66 6.73
F 0.027 0.031 0.033 0.69 0.80 0.84
G 0.087 0.090 0.093 2.21 2.28 2.36
H 0.085 0.092 0.095 2.16 2.34 2.41
I 0.176 0.180 0.184 4.47 4.57 4.67
J 0.018 0.020 0.023 0.46 0.51 0.58
K 0.035 0.037 0.039 0.90 0.95 1. 0 0
L 0.018 0.020 0.023 0.46 0.52 0.58
P 0.042 0.047 0.052 1.06 1.20 1.32
Q 0.034 0.039 0.044 0.86 1. 0 0 1. 11
R 0.034 0.039 0.044 0.86 1. 0 0 1. 11
S 0.074 0.079 0.084 1.86 2.00 2.11
Dimensions — TO-252AA (D-Package) — D-PAK Surface Mount
Dimension Inches Millimeters
Min Ty p Max Min Ty p Max
A0.037 0.040 0.043 0.94 1.01 1.09
B 0.235 0.243 0.245 5.97 6.16 6.22
C 0.106 0.108 0.113 2.69 2.74 2.87
D 0.205 0.208 0.213 5.21 5.29 5.41
E 0.255 0.262 0.265 6.48 6.65 6.73
F 0.027 0.031 0.033 0.69 0.80 0.84
G 0.087 0.090 0.093 2.21 2.28 2.36
H 0.085 0.092 0.095 2.16 2.33 2.41
I 0.176 0.179 0.184 4.47 4.55 4.67
J 0.018 0.020 0.023 0.46 0.51 0.58
K0.035 0.037 0.039 0.90 0.95 1. 0 0
L 0.018 0.020 0.023 0.46 0.51 0.58
M 0.000 0.000 0.004 0.00 0.00 0.10
N 0.021 0.026 0.027 0.53 0.67 0.69
O
P 0.042 0.047 0.052 1.06 1.20 1.32
Q 0.034 0.039 0.044 0.86 1. 0 0 1. 11
M
O
N
H
J
L
K
.118
3
.063
1.60
.071
1.80
.264
6.71
.264
6.71
.181
4.60
GATE
MT2
MT1
MT2
TC MEASURING POINT
G
I
D
E
A
B
C
F
5.28
.208
5.34
.210
: 0.040 IN2
AREA
P
Q
Connects to MT2
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
Product Selector
Part Number Voltage Gate Sensitivity Quadrants Type Package
400V 600V I – II – III IV
LJxx08D8 x x 10mA 20mA Sensitive Triac TO-252 D-PAK
LJxx08V8 x x 10mA 20mA Sensitive Triac TO-251 V-PAK
QJxx08DH3 x x 10mA - Alternistor Triac TO-252 D-PAK
QJxx08VH3 x x 10mA - Alternistor Triac TO-251 V-PAK
QJxx08DH4 x x 35mA - Alternistor Triac TO-252 D-PAK
QJxx08VH4 x x 35mA - Alternistor Triac TO-251 V-PAK
Note: xx=voltage/10
Packing Options
Part Number Marking Weight Packing Mode Base Quantity
LJxx08D8TP LJxx08D8 0.3g Tube Pack 750(75 per tube)
LJxx08D8RP LJxx08D8 0.3g Embossed Carrier 2500
LJxx08V8TP LJxx08V8 0.4g Tube Pack 750(75 per tube)
QJxx08DH3TP QJxx08DH3 0.3g Tube Pack 750(75 per tube)
QJxx08DH3RP QJxx08DH3 0.3g Embossed Carrier 2500
QJxx08VH3TP QJxx08VH3 0.4g Tube Pack 750(75 per tube)
QJxx08DH4TP QJxx08DH4 0.3g Tube Pack 750(75 per tube)
QJxx08DH4RP QJxx08DH4 0.3g Embossed Carrier 2500
QJxx08VH4TP QJxx08VH4 0.4g Tube Pack 750(75 per tube)
Note: xx=voltage/10
CURRENT
08: 8A
SENSITIVITY & TYPE
Sensitive Triac:
8
:
10 mA (QI, II, III)
20 mA (QIV)
Alternistor Triac:
H3
:
10 mA (QI, II, III)
H4
:
35 mA (QI, II, III)
PACKAGE TYPE
V : TO-251 (VPAK)
D : TO-252 (DPAK)
VOLTAGE RATING
40 :
400V
60 :
600V
QJ 60 08 V 8
COMPONENT TYPE
LJ :
HT Sensitive Triac
QJ
:
HT Triac or Alternistor
Part Numbering System Part Marking System
LJ6008V8
YMLDD
®
Date Code Marking
Y:Year Code
M: Month Code
L: Location Code
DD: Calendar Code
©2018 Littelfuse, Inc.
Specifications are subject to change without notice.
Revision: 12/04/18
Thyristors
8 Amp High Temperature Sensitive & Alternistor (High Commutation) Triacs
0.512 (13.0) Arbor
Hole Dia.
DC
XXXXXX
XXXXXX
DC
XXXXXX
DC
XXXXXX
XX
XX
XX
Gate MT1
MT2
0.63
(16.0)
0.157
(4.0)
0.64
(16.3)
12.99
(330.0)
0.524
(13.3)
0.315
(8.0)
0.059 Dia
(1.5)
*
*Cover tape
Direction of Feed
Dimensions
are in inches
(and millimeters).
TO-252 Embossed Carrier Reel Pack (RP) Specifications
Meets all EIA-481-2 Standards
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