J/SST201 Series
Vishay Siliconix
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
1
N-Channel JFETs
J201 SST201
J202 SST202
J204 SST204
PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J/SST201 −0.3 to −1.5 −40 0.5 0.2
J/SST202 −0.8 to −4−40 1 0.9
J/SST204 −0.3 to −2−25 0.5 0.2
FEATURES BENEFITS APPLICATIONS
DLow Cutoff Voltage: J201 <1.5 V
DHigh Input Impedance
DVery Low Noise
DHigh Gain: AV = 80 @ 20 mA
DFull Performance from Low Voltage
Power Supply: Down to 1.5 V
DLow Signal Loss/System Error
DHigh System Sensitivity
DHigh Quality Low-Level Signal
Amplification
DHigh-Gain, Low-Noise Amplifiers
DLow-Current, Low-Voltage
Battery-Powered Amplifiers
DInfrared Detector Amplifiers
DUltra High Input Impedance
Pre-Amplifiers
DESCRIPTION
The J/SST201 series features low leakage, very low noise,
and low cutoff voltage for use with low-level power supplies.
The J/SST201 is excellent for battery powered equipment and
low current amplifiers.
The J series, TO-226 (TO-92) plastic package, provides low
cost, while the SST series, TO-236 (SOT-23) package,
provides surface-mount capability. Both the J and SST series
are available in tape-and-reel for automated assembly (see
Packaging Information).
For similar products in TO-206AA (TO-18) packaging, see the
2N4338/4339/4340/4341 data sheet.
For applications information see AN102 and AN106.
TO-226AA
(TO-92)
Top View
J201
J202
J204
D
G
S
1
2
3
D
S
G
TO-236
(SOT-23)
2
3
1
Top View
SST201 (P1)*
SST202 (P2)*
SST204 (P4)*
*Marking Code for TO-236
J/SST201 Series
Vishay Siliconix
www.vishay.com
2
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage −40 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .
Storage Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature −55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa350 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201 J/SST202 J/SST204c
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage V(BR)GSS IG = −1 mA , VDS = 0 V −40 −40 −25
V
Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −1.5 −0.8 −4−0.3 −2
V
Saturation Drain CurrentbIDSS VDS = 15 V, VGS = 0 V 0.2 1 0.9 4.5 0.2 3 mA
Gate Reverse Current
IGSS
VGS = −20 V, VDS = 0 V −2−100 −100 −100 pA
Gate Reverse Current IGSS TA = 125_C−1 nA
Gate Operating Current IGVDG = 10 V, ID = 0.1 mA −2
pA
Drain Cutoff Current ID(off) VDS = 15 V, VGS = −5 V 2pA
Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source
Forward Transconductance gfs VDS = 15 V, VGS = 0 V
f = 1 kHz 0.5 1 0.5 mS
Common-Source
Input Capacitance Ciss VDS = 15 V, VGS = 0 V
4.5
pF
Common-Source
Reverse Transfer Capacitance Crss
VDS = 15 V
,
VGS = 0 V
f = 1 MHz 1.3
pF
Equivalent Input Noise Voltage enVDS = 10 V, VGS = 0 V
f = 1 kHz 6nV⁄
√Hz
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA, NH
b. Pulse test: PW v300 ms duty cycle v3%.
c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves.
J/SST201 Series
Vishay Siliconix
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Gate Leakage Current
2
012168420
1.6
1.2
0.8
0.4
0
Output Characteristics
VDS − Drain-Source Voltage (V)
VGS = 0 V
−0.6 V
−0.9 V
−0.3 V
VGS(off) = −1.5 V
−1.2 V
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
10
0.1 pA
1 pA
10 pA
100 pA
1 nA
10 nA
01530
VDG − Drain-Gate Voltage (V)
IGSS @ 125_C
IGSS @ 25_C
TA = 125_C
TA = 25_C
ID = 100 mA
ID = 500 mA
IG @ ID = 500 mA
ID = 100 mA
0
8
6
4
2
0−5−4−3−2−1
5
4
1
3
2
0
VGS(off) − Gate-Source Cutoff Voltage (V)
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
gfs
IDSS
1500
0−3−5−4−2−1
1200
900
600
300
0
0.01 0.1 1
2
1.6
0.8
0.4
0
10
8
4
2
0
400
01216420
360
160
80
0
Output Characteristics
Common-Source Forward Transconductance
vs. Drain Current
ID − Drain Current (mA)VGS(off) − Gate-Source Cutoff Voltage (V)
VDS − Drain-Source Voltage (V)
TA = −55_C
125_C
−0.2 V
−0.4 V
−0.1 V
−0.3 V
rDS @ ID = 100 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
rDS
gos
6 1.2
240
8
VGS(off) = −0.7 V
25_C
−0.5 V
VDS = 10 V
f = 1 kHz
VGS(off) = −1.5 V
VGS = 0 V
gos − Output Conductance (mS)
IDSS − Saturation Drain Current (mA)
rDS(on) − Drain-Source On-Resistance ( Ω )
gfs − Forward Transconductance (mS)
ID − Drain Current (mA)
ID − Drain Current (mA)
IG − Gate Leakage (A)
gfs − Forward Transconductance (mS)
J/SST201 Series
Vishay Siliconix
www.vishay.com
4
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
2
0−1.2 −1.6 −2−0.8−0.4
1.6
1.2
0.8
0.4
0
Transfer Characteristics
VGS − Gate-Source Voltage (V)
TA = −55_C
125_C
25_C
VDS = 10 VVGS(off) = −1.5 V
500
0−0.3−0.2−0.1 −0.4 −0.5
400
300
200
100
0
Transfer Characteristics
VGS − Gate-Source Voltage (V)
TA = −55_C
125_C
25_C
VDS = 10 VVGS(off) = −0.7 V
0.1 10.01
4
−1.2 −2−1.6−0.8−0.40
3.2
2.4
1.6
0.8
0
0.01 0.1 1
200
160
120
80
40
0
2000
1600
1200
800
400
0
ID − Drain Current (mA)
Circuit Voltage Gain vs. Drain Current
Transconductance vs. Gate-Source Voltage
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
ID − Drain Current (mA)
25_C
VGS(off) = −0.7 V
−1.5 V
VGS(off) = −0.7 V
−1.5 V
1.5
0−0.3 −0.4−0.2−0.1 −0.5
1.2
0.9
0.6
0.3
0
Transconductance vs. Gate-Source Voltage
TA = −55_C
125_C
VGS − Gate-Source Voltage (V)
25_C
VDS = 10 V
f = 1 kHz
VGS(off) = −0.7 V VDS = 10 V
f = 1 kHz
VGS(off) = −1.5 V
AV+
gfs RL
1)RLgos
Assume VDD = 15 V, VDS = 5 V
RL+
10 V
ID
gfs − Forward Transconductance (mS)
gfs − Forward Transconductance (mS)rDS(on) − Drain-Source On-Resistance ( Ω ) ID − Drain Current (mA)
ID − Drain Current (mA)
AV − Voltage Gain
J/SST201 Series
Vishay Siliconix
Document Number: 70233
S-40393—Rev. G, 15-Mar-04
www.vishay.com
5
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
0−12 −16 −20−8−4
8
6
4
2
0
5
0−12 −20−16−8−4
4
3
2
1
0
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
VGS − Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
VGS − Gate-Source Voltage (V)
VDS = 0 V
10 V
f = 1 MHz
10 100 1 k 100 k10 k
20
16
12
8
4
0
Output Conductance vs. Drain Current
ID − Drain Current (mA)
TA = −55_C
125_C
Equivalent Input Noise Voltage vs. Frequency
f − Frequency (Hz)
VDS = 10 V
ID @ 100 mA
VGS = 0 V
3
2.4
1.8
0.8
0.4
0
0.01 0.1 1
25_C
Output Characteristics
300
0 0.5
240
180
120
60
0
VDS − Drain-Source Voltage (V)
0.1 0.2 0.3 0.4
Output Characteristics
1.0
0 1.0
0.8
0.6
0.4
0.2
0
VDS − Drain-Source Voltage (V)
0.2 0.4 0.6 0.8
VGS(off) = −0.7 V VGS = 0 V
−0.1
−0.2
−0.3
−0.4
−0.5
VGS(off) = −1.5 V
VGS = 0 V
−0.3
−0.6
−0.9
−1.2
VDS = 10 V
f = 1 kHz
VGS(off) = −1.5 V
en − Noise Voltage nV / Hz
ID − Drain Current (mA)
ID − Drain Current (µA) gos − Output Conductance (µS) Ciss − Input Capacitance (pF)
Crss − Reverse Feedback Capacitance (pF)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
