Document Number: 86063 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.5, 21-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Standard Avalanche Sinterglass Diode
1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Rectification diode, general purpose
949588
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
1N5624 VR = 200 V; IFAV = 3 A SOD-64
1N5625 VR = 400 V; IFAV = 3 A SOD-64
1N5626 VR = 600 V; IFAV = 3 A SOD-64
1N5627 VR = 800 V; IFAV = 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
1N5624 VR = VRRM 200 V
1N5625 VR = VRRM 400 V
1N5626 VR = VRRM 600 V
1N5627 VR = VRRM 800 V
Peak forward surge current tp = 10 ms, half sinewave IFSM 100 A
Repetitive peak forward current IFRM 18 A
Average forward current IFAV 3A
Pulse avalanche peak power tp = 20 μs, half sine wave,
Tj = 175 °C PR1000 W
Pulse energy in avalanche mode, non
repetitive (inductive load switch off) I(BR)R = 1 A, Tj = 175 °C ER20 mJ
i2*t-rating i2*t 40 A2*s
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient l = 10 mm, TL = constant RthJA 25 K/W
On PC board with spacing 25 mm RthJA 70 K/W
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86063
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.5, 21-Sep-10
1N5624, 1N5625, 1N5626, 1N5627
Vishay Semiconductors Standard Avalanche Sinterglass
Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX UNIT
Forward voltage IF = 3 A VF--1V
Reverse current VR = VRRM IR-0.11μA
VR = VRRM, Tj = 100 °C IR- 5 10 μA
Breakdown voltage IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms V(BR) - - 1600 V
Diode capacitance VR = 4 V, f = 1 MHz CD-4060pF
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr -3.55μs
IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr -4.57.5μs
Reverse recovery charge IF = 1 A, dI/dt = 5 A/μs Qrr -812μC
0 5 10 15 25
0
10
20
30
40
RthJA - Therm. Resist.
Junction/Ambient (K/W)
I - Lead Length (mm)
30
94 9563
20
ll
TL = constant
I – Forward Current ( A )
0.001
0.010
0.100
1.000
10.000
100.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )16392
F
Tj=25°C
Tj=175°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tamb
- Ambient Temperature (°C)
16393
Average Forward Current (A)
IFAV -
VR=V RRM
half sinewave
RthJA=25K/W
l=10mm
RthJA=70K/W
PCB: d=25mm
1
10
100
1000
25 50 75 100 125 150 175
Tj – Junction T emperature ( °C )16394
VR = V RRM
I – R everse Current ( A )
R
1N5624, 1N5625, 1N5626, 1N5627
Standard Avalanche Sinterglass
Diode Vishay Semiconductors
Document Number: 86063 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.5, 21-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
50
100
150
200
250
300
25 50 75 100 125 150 175
Tj – Junction Temperature ( °C )16395
VR = V RRM
P – R everse Power Dissipation ( mW )
R
PR–Limit
@ 100%V R
PR–Limit
@ 80%V R
0
10
20
30
40
50
60
70
80
90
100
0.1 1.0 10.0 100.0
VR – R everse V ol tage ( V )16396
C – D i ode C apacitance ( pF )
D
f=1MHz
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
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www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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