1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES * Glass passivated junction * Hermetically sealed package * Controlled avalanche characteristics * Low reverse current * High surge current loading 949588 * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC * Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-64 * Rectification diode, general purpose Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 858 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE 1N5624 VR = 200 V; IFAV = 3 A SOD-64 1N5625 VR = 400 V; IFAV = 3 A SOD-64 1N5626 VR = 600 V; IFAV = 3 A SOD-64 1N5627 VR = 800 V; IFAV = 3 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage Peak forward surge current See electrical characteristics PART SYMBOL VALUE UNIT 1N5624 VR = VRRM 200 V 1N5625 VR = VRRM 400 V 1N5626 VR = VRRM 600 V 1N5627 VR = VRRM 800 V IFSM 100 A IFRM 18 A tp = 10 ms, half sinewave Repetitive peak forward current Average forward current Pulse avalanche peak power Pulse energy in avalanche mode, non repetitive (inductive load switch off) IFAV 3 A tp = 20 s, half sine wave, Tj = 175 C PR 1000 W I(BR)R = 1 A, Tj = 175 C ER 20 mJ i2*t 40 A2*s Tj = Tstg - 55 to + 175 C i2*t-rating Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient Document Number: 86063 Rev. 1.5, 21-Sep-10 TEST CONDITION SYMBOL VALUE UNIT l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 1N5624, 1N5625, 1N5626, 1N5627 Standard Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Reverse current Breakdown voltage PART MIN. TYP. MAX VF - - 1 UNIT V VR = VRRM IR - 0.1 1 A VR = VRRM, Tj = 100 C IR - 5 10 A IR = 100 A, tp/T = 0.01, tp = 0.3 ms V(BR) - - 1600 V VR = 4 V, f = 1 MHz CD - 40 60 pF IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - 3.5 5 s IF = 1 A, dI/dt = 5 A/s, VR = 50 V trr - 4.5 7.5 s IF = 1 A, dI/dt = 5 A/s Qrr - 8 12 C Diode capacitance Reverse recovery time SYMBOL IF = 3 A Reverse recovery charge TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 3.5 30 20 l l 10 2.5 2.0 1.5 1.0 0 5 10 15 20 25 0.0 30 I - Lead Length (mm) 94 9563 R thJA =70K/W PCB: d=25mm 0.5 TL = constant 0 V R =V RRM half sinewave R thJA =25K/W l=10mm 3.0 IFAV - Average Forward Current (A) RthJA - Therm. Resist. Junction/Ambient (K/W) 40 Fig. 1 - Max. Thermal Resistance vs. Lead Length 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 T amb- Ambient Temperature (C) 16393 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 100.000 - Forward Current ( A ) F I T j =175C 1.000 0.100 T j =25C 0.010 I R - R everse Current ( A ) V R = V RRM 10.000 0.001 16392 100 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V F - Forward Voltage ( V ) Fig. 2 - Forward Current vs. Forward Voltage www.vishay.com 2 25 16394 50 75 100 125 150 T j - Junction Temperature ( C ) 175 Fig. 4 - Reverse Current vs. Junction Temperature For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86063 Rev. 1.5, 21-Sep-10 1N5624, 1N5625, 1N5626, 1N5627 Standard Avalanche Sinterglass Diode 100 V R = V RRM 200 PR -L imit @ 100%V R 150 PR -L imit @ 80%V R 100 50 80 70 60 50 40 30 20 10 0 0 25 16395 f=1MHz 90 250 CD - Diode Capacitance ( pF ) PR - R everse Power Dissipation ( mW ) 300 Vishay Semiconductors 50 75 100 125 150 T j - Junction Temperature ( C ) 175 0.1 1.0 10.0 V R - R everse Voltage ( V ) 16396 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 100.0 Fig. 6 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86063 Rev. 1.5, 21-Sep-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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