DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. P10938EJ2V0DS00 (2nd edition)
Date Published August 2001 NS CP(K)
NPN SILICON RF TRANSISTOR
NE856M02 / 2SC5336
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
4-PIN POWER MINIMOLD
The mark •
••
• shows major revised poi nts.
FEATURES
• High gain: S21e2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin power minimold package with improved gain from the NE85634 / 2SC3357
ORDERING INFORMATION
Part Number Quantity Supplying Form
NE856M02-AZ
2SC5336-AZ
25 pcs (Non reel) • Magazine case
NE856M02-AZ
2SC5336-T1-AZ
1 kpcs/reel
• 12 mm wide embossed taping
• Collector face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC100 mA
Total Power Dissipation Ptot Note 1.2 W
Junction Temperature Tj150 °C
Storage Temperature Tstg −65 to +150 °C
Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
JEITA
Part No.
DISCONTINUED
Data Sheet P10938EJ2V0DS
2
NE856M02 / 2SC5336
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol Test Conditions MIN. TYP. MAX.Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA – – 1.0
μ
A
Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA – – 1.0
μ
A
DC Current Gain hFE Note 1 VCE = 10 V, IC = 20 mA 50 120250 –
RF Characteristics
Gain Bandwidth Product fTVCE = 10 V, IC = 20 mA – 6.5 – GHz
Insertion Power Gain ⏐S21e⏐2VCE = 10 V, IC = 20 mA, f = 1 GHz – 12 – dB
Noise Figure (1) NF VCE = 10 V, IC = 7 mA, f = 1 GHz – 1.1 – dB
Noise Figure (2) NF VCE = 10 V, IC = 40 mA, f = 1 GHz – 1.8 3.0 dB
Reverse Transfer Capacitance Cre Note 2 VCB = 10 V, IE = 0 mA, f = 1 MHz – 0.5 0.8 pF
Notes 1.Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank RH RF RE
Marking RH RF RE
hFE Value 50 to 10080 to 160125 to 250
DISCONTINUED
Data Sheet P10938EJ2V0DS 3
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°
°°
°C)
Mounted on Ceramic Substrate
(16 cm
2
× 0.7 mm (t) )
2.0
1.0
050 100 150
Total Power Dissipation P
tot
(W)
Ambient Temperature T
A
(°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
V
CE
= 10 V
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
20
50
10
100.5 1 5 50
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
2.0
3.0
0.3
1.0
0.5
1 3 5 10 20 30
V
CE
= 10 V
f = 1 GHz
Collector Current I
C
(mA)
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
Insertion Power Gain |S
21e
|
2
(dB)
15
10
5
01 3 5 10 20 30 50 100
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
3
5
0.3
0.5
1
20 30 501 3 5 10
V
CE
= 10 V
f = 1 GHz
V
CE
= 10 V
I
C
= 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
20
10
00.2 0.4 0.6 0.8 1.0 1.4 2.0
MAG
|S
21e
|
2
NE856M02 / 2SC5336
DISCONTINUED
Data Sheet P10938EJ2V0DS
4
–90
–100
–80
–70
–60
–40
–50
–30 20 30 40 50 60 70
Collector Current I
C
(mA)
IM
3
, IM
2
vs. COLLECTOR CURRENT
3rd Order Intermodulation Distortion IM
3
(dB)
2nd Order Intermodulation Distortion IM
2
(dB)
IM
2
IM
3
V
CE
= 10 V,
V
in
= 100 dB V/50 Ω
R
g
= Re = 50 Ω
IM
2
: f = 90 + 100 MHz
IM
3
: f = 2 × 200 – 190 MHz
μ
7
6
5
4
3
2
1
00.5 1 5 10 50
Collector Current I
C
(mA)
NOISE FIGURE vs.
COLLECTOR CURRENT
Noise Figure NF (dB)
V
CE
= 10 V
f = 1 GHz
Remark The graphs indicate nominal characteristics.
NE856M02 / 2SC5336
DISCONTINUED
Data Sheet P10938EJ2V0DS 5
S-PARAMETERS
VCE = 10 V, IC = 20 mA
Frequency S11 S21 S12 S22
(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
).ged().ged().ged().ged(
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.519
0.413
0.413
0.345
0.331
0.320
0.302
0.296
0.283
0.285
0.265
0.260
0.263
0.242
0.252
0.253
0.253
0.257
0.262
0.273
−74.5
−112.9
−133.4
−145.7
−153.8
−159.6
−166.8
−169.2
−173.2
−179.8
175.2
174.1
166.0
163.0
160.1
154.0
149.9
147.2
143.0
141.5
30.931
18.965
13.324
10.164
8.177
6.834
5.832
5.107
4.600
4.200
3.930
3.979
3.741
3.115
2.844
2.595
2.420
2.305
2.171
2.049
131.9
111.5
101.9
95.9
91.8
89.1
86.7
84.3
83.1
82.3
80.8
78.5
68.6
66.6
65.7
64.1
63.7
63.0
62.6
61.2
0.017
0.031
0.038
0.045
0.055
0.064
0.074
0.077
0.088
0.097
0.100
0.109
0.114
0.119
0.133
0.140
0.158
0.165
0.172
0.177
60.6
61.9
65.1
69.8
71.8
70.9
73.9
74.4
71.2
74.5
76.3
75.9
76.8
78.3
82.0
81.0
80.9
82.2
80.5
78.3
0.752
0.570
0.465
0.428
0.436
0.438
0.434
0.429
0.436
0.455
0.467
0.529
0.551
0.509
0.510
0.496
0.515
0.518
0.536
0.524
−30.2
−39.7
−39.8
−40.1
−41.1
−43.5
−47.5
−47.8
−46.5
−47.8
−46.8
−47.4
−55.8
−55.8
−58.5
−55.2
−54.8
−56.5
−58.6
−61.5
VCE = 10 V, IC = 40 mA
Frequency S11 S21 S12 S22
(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.
).ged().ged().ged().ged(
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
0.378
0.317
0.308
0.299
0.297
0.288
0.274
0.261
0.255
0.260
0.243
0.239
0.245
0.216
0.235
0.243
0.233
0.242
0.249
0.260
−97.1
−131.8
−150.1
−158.7
−165.5
−169.2
−173.7
−177.3
178.9
173.0
169.4
169.3
160.3
157.8
155.3
148.8
146.0
144.6
141.9
140.4
32.908
18.819
12.955
9.775
7.899
6.586
5.607
4.879
4.435
4.024
3.801
3.827
3.587
2.980
2.726
2.537
2.348
2.200
2.073
1.986
123.3
106.0
97.5
93.1
89.8
87.6
85.2
83.5
82.2
81.4
80.6
78.2
68.4
66.0
66.1
64.0
64.2
63.5
63.3
61.7
0.017
0.027
0.035
0.042
0.052
0.061
0.071
0.081
0.092
0.095
0.098
0.109
0.117
0.125
0.137
0.143
0.159
0.163
0.171
0.184
71.1
71.2
71.8
78.1
78.5
79.1
77.4
76.4
76.5
77.6
77.1
78.3
78.0
80.3
86.5
80.6
81.2
80.4
81.7
77.5
0.665
0.487
0.398
0.393
0.399
0.407
0.400
0.415
0.399
0.440
0.441
0.494
0.517
0.486
0.500
0.474
0.496
0.491
0.534
0.535
−34.7
−38.7
−38.5
−36.9
−37.6
−39.9
−44.6
−47.4
−46.2
−44.3
−45.2
−46.2
−55.4
−54.5
−59.0
−53.7
−56.8
−53.6
−58.0
−61.3
NE856M02 / 2SC5336
DISCONTINUED
Data Sheet P10938EJ2V0DS
6
PACKAGE DIMENSIONS
4-PIN POWER MINIMOLD (UNIT: mm)
1.5±0.1
0.25±0.02
4.5±0.1
2.1
1.6
0.8
0.42±0.060.42±0.06
0.3
2.45±0.1
0.1
0.8 MIN.
3.95±0.25
0.46
±0.06
3.0
1.5
0.85
1.55
E B
C
E
E : Emitter
C: Collector
B : Base
PIN CONNECTIONS
NE856M02 / 2SC5336
DISCONTINUED
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DISCONTINUED
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Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
CEL:
NE85633-R24-A NE856M02-T1-AZ NE856M02-AZ 2SC5336-T1-AZ 2SC5336-AZ