fA MOSPEC MEDIUM-POWER PNP TRANSISTORS ...ideal for use as drivers, switches and medium- power amplifier and applications FEATURES: * Low Collector-Emitter Saturation Voltage - Vogisar)=0-6V(Max.)@I_=1 0A * High Gain Characteristics - hFE = 30 ~ 100 @ |, = 250mA * Excellent Safe Area Limits MAXIMUM RATINGS PNP 2N3740 2N3741 4 AMPERE POWER TRANSISTORS PNP SILICON 60 - 80 Voits 25 Watts Characteristic Symbol 2N3740 2N3741 Unit Collector-Emitter Voltage VeEo 60 80 Vv 'Collector-Base Voltage Vero 60 80 V Emitter-Base Voltage Veso 7.0 Vv Collector Current-Continuous Io 4.0 A -Peak lom 10 Base Current lp 2.0 A Total Power Dissipation@T,=25C Pp 25 Ww Derate above 25C 0.143 wc Operating and Storage Junction Ty. Tst C Temperature Range - 65 to +200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Reje 7.0 CAN FIGURE -1 POWER DERATING a 15 P| 10 Pp , POWER DISSIPATION(WATTS) 0 0 2 5S To , TEMPERATURE( C) 100 125 150 175 200 PIN 1.BASE 2.EMITTER COLLECTOR(CASE) DIM MILLIMETERS MIN MAX A 30.60 | 32.52 B 13.85 | 14.16 Cc 6.54 7.22 D 9.50 | 10.50 E 17.26 | 18.46 F 6.76 0.92 G. 1.38 1.65 H 24.16 | 24.78 I 13.84 | 15.60 J 3.32 3.92 K 486 5.342N3740, 2N3741 PNP ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) (1, = 100 mA, I, =0) 2N3740 2N3741 Veeoisus) 60 80 Collector Cutoff Current (Veg = 40 V, 1, = 0) ( Veg = 60 V, 1, = 9) 2N3740 2N3741 | CEO Collector Cutoff Current ( Veg = 60 V, Vee{om =1.5V) ( Veg = 80 V, Veejom =1.5V) (Veg = 40 V, Veg(or =1.5V, T, = 150C ) (Veg = 60 V, Veciom = 1.5 V, T, = 150C ) 2N3740 2N3741 2N3740 2N3741 loex 255 Collector Cutoff Current (Veg = 60V,1,=0 ) (Veg = 80 V, IE =9 ) 2N3740 2N3741 lepo & Emitter Cutoff Current (Veg =7.0V,1,=0) leBo 0.5 ON CHARACTERISTICS (1) DC Current Gain (I, = 100 mA, V., (I, = 250 mA, V,, (1, = 500 mA, Vo. (I, = 1.0A, V,, = 1.0 ioou ou a ok od hFE 40 30 20 100 Collector-Emitter On Voltage (1, = 1.0A, I, = 125 mA) Vee(sat) 0.6 Base-Emitter On Voltage (lp = 250 mA, Veg = 1.0 V ) Vee(on) 1.0 DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product (2) (Ig = 100 mA, Veg = 10 V, f = 1.0 MHz) 3.0 MHz Commom Base Output Capacitance (Veg = 10 V I, =0,f = 100 KHZ) 100 pF Small-Signal Current Gain (I, = 50 mA, Veg = 10 V, f = 1.0 KHZ ) 25 (1) Pulse Test: Pulse width < 300 us , Duty Cycle = 2.0% (2) f,=| h,.| Trest2N3740,2N3741 PNP 0 ACTIVE-REGION SAFE OPERATING AREA (SOA) 100 us There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate l-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T ypig=200 C:T is variable depending on conditions. second breakdown lc , COLLECTOR CURRENT (Amp) Thermally Limited T,.=25C (Single Puse) LIMIT FOR: pulse limits are valid for duty cycles to 10% provided Breakdown Limt 2ngr4o T.yey$200C,,At high case temperatures, thermal limitation will reduce the power that can be handled to values less ony 2 5 10 20 50 70 than the limitations imposed by second breakdown Vcr , COLLECTOR EMITTER VOLTAGE (VOLTS) DC CURRENT GAIN "ON" VOLTAGES 1.0 Tye100C e Vee(eet) loflg10 08 Zz ci 06 Vae@ Voe=Z.0V 3 g B04 a g > 0.2 lefg=10 10, 10 20 30 50 70 100 200 300 500 1000 0.01 0.02 0.03 0.05 0.07 0.1 02 03 05 O07 1.0 Ie , COLLECTOR CURRENT (mA) IC , COLLECTOR CURRENT (AMP) COLLECTOR SATURATION REGION 2.0 1.8 16 1.4 12 le 1.0 08 06 0.4 0.2 Vee , COLLECTOR EMITTER VOLTAGE (VOLTS) 00 1.0 2.0 3.0 5.0 70 10 20 30 50 70 100 200 Ip, BASE CURRENT (mA)