Agilent HSDL-4261
High-Power T-1¾ (5mm)
AlGaAs Infrared (870nm) Lamp
Data Sheet
Features
••
••
•Very High Power AlGaAs LED
Technology
••
••
•870nm Wavelength
••
••
•T-1¾ Package
••
••
•Low Cost
••
••
•Low Forward Voltage: 1.4V at
20mA
••
••
•High Speed: 15ns Rise Times
Applications
••
••
•Industrial IR Equipments
••
••
•IR Portable Instruments
••
••
•Consumer Electronics
(Optical mouse etc)
••
••
•High Speed IR Communications
(IR LANs, IR Modems, IR Dongles
etc)
••
••
•IR Audio
••
••
•IR Telephones
Part Number Lead Form Shipping Option
HSDL-4261 Straight Bulk
Description
The HSDL-4261 Infrared
emitter was designed for
applications that require high
power, low forward voltage
and high speed. It utilizes
Aluminum Galium Arsenide
(AlGaAs) LED technology and
is optimized for speed and
efficiency at emission
1.14 ± 0.2
5.8 ± 0.2
5.0 ± 0.2
31.6 min.
0.7 max.
8.7 ± 0.2
2.54
0.50 ± 0.1
CATHODE
FLAT
1.0 min.
wavelengths of 870nm. The
material used produces high
radiant efficiency over a wide
range of currents. The emitter
is packaged in clear T-1¾
(5mm) package.
2
Absolute Maximum Ratings at 25°°
°°
°C
Electrical Characteristics at 25°°
°°
°C
Optical Characteristics at 25°°
°°
°C
Notes:
1. Derate as shown in Figure 6.
Parameter Symbol Min. Typ. Max. Unit Condition Reference
Forward Voltage VF-1.4
1.7
1.5
1.9
VI
FDC=20mA
IFDC=100mA
Fig. 2
Fig. 3
Forward VoltageTemperature Coefficient ∆V/∆T--1.5
-1.3
-mV/°CI
FDC=20mA
IFDC=100mA
Fig. 4
Series Resistance RS-4.1 - OhmsI
FDC=100mA
Diode Capacitance CO- 80 - pF 0V, 1MHz
Reverse Voltage VR314 - V I
R=100uA
Thermal Resistance, Junction to Ambient Rθja -280 - °C/W
Parameter Symbol Min. Typ. Max. Unit Condition Reference
Radiant Optical Power PO-9
45
-mWI
FDC=20mA
IFDC=100mA
Radiant On-Axis Intensity IE-36
180
-mW/SrI
FDC=20mA
IFDC=100mA
Fig. 5
Radiant On-Axis IntensityTemperature
Coefficient
∆IE/∆T- -0.22 - %/°C IFDC=100mA
Viewing Angle 2θ1/2 -26- degI
FDC=20mA Fig. 7
Peak wavelength λPK -870- nmI
FDC=20mA Fig. 1
Peak wavelengthTemperature Coefficient ∆λ/∆T-0.18- nm/°CI
FDC=20mA
Spectral Width ∆λ -47
52
-nmI
FDC=20mA
IFDC=100mA
Fig. 1
Optical Rise and Fall Time tr/tf-15- nsI
FPK=500mA
Duty Factor=33%
Pulse Width=125ns
Bandwidth fc-23- MHz
Parameter Symbol Min. Max Unit Reference
DC Forward Current IFDC - 100 mA [1], Fig. 2
Power Dissipation PDISS - 190 mW
Reverse Voltage VR5- V
Operating Temperature TO-40 70 °C
Storage Temperature TS-40 100 °C
LED Junction Temperature TJ- 110 °C
Lead Soldering Temperature - 260 for 5 sec °C
3
Figure 1. Relative Radiant Intensity vs. Wavelength Figure 2. DC Forward Current vs. Forward Voltage
Figure 3. Peak Forward Current vs. Forward Voltage Figure 4. Forward Voltage vs. Ambient Temperature
Figure 5. Relative Radiant Intensity vs. DC Forward Current Figure 6. DC Forward Current vs. Ambient Temperature
Derated Based on TJMAX=1100C
0.0
1.0
2.0
3.0
4.0
5.0
0 20406080100
DC Forward Current, I
FDC
(mA)
Relative Radiant Intensity
(Normalized at 20mA)
T
A
= 25˚C
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage, VF (V)
Peak Forward Current, IFPK (mA)
TA = 25˚C
0
20
40
60
80
100
0 10203040506070
Ambient Temperature, T
A
(˚C)
DC Forward Current, I
FDC
(mA)
R
JA
= 400˚C/W
R
JA
= 500˚C/W
R
JA
= 300˚C/W
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage, V
F
(V)
Forward Current, I
FDC
(mA)
T
A
= 25˚C
1.0
1.2
1.4
1.6
1.8
2.0
-40 -25 0 25 50 70 85 100
I
FDC
=20mA
I
FDC
=100mA
Ambient Temperature (
o
C)
Forward Voltage, V
F
(V)
0
0.2
0.4
0.6
0.8
1
1.2
750 780 810 840 870 900 930
Wavelength (nm)
Relative Radiant Intensity
Peak Wavelength at
I
FDC
= 20mA, T
A
=25oC
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or (408) 654-8675
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Data subject to change.
Copyright © 2004 Agilent Technologies, Inc.
August 19, 2004
5989-1534EN
Figure 7. Radiant Intensity vs. Angular Displacement