SCHOTTKY RECTIFIER JANTX1N6844U3
15Amp, 100V
Major Ratings and Characteristics Description/Features
10/26/12
CASE STYLE
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Characteristics Limits Units
IF(AV) Rectangular Waveform 15 A
VRRM 100 V
IFSM @tp = 8.3ms half-sine 250 A
V
F
@15Apk, TJ=125°C 0.72 V
TJ, Tstg Operating and Storage -65 to 150 °C
HIGH EFFICIENCY SERIES JANTXV1N6844U3
Case Outline and Dimensions - SMD-0.5
( ISOLATED BASE )
CATHODE ANODE ANODE
The1N6844U3 Schottky rectifier has been expressly
designed to meet the rigorous requirements of high
reliabilty environments. It is packaged in the hermetic
surface mount SMD-0.5 ceramic package. The device's
forward voltage drop and reverse leakage current are
optimized for the lowest power loss and the highest
circuit efficiency for typical high frequency switching
power supplies and resonent power converters. Full
MIL-PRF-19500 quality conformance testing is available
on source controlled drawings to S, TX and TXV levels.
• Hermetically Sealed
• Low Forward Voltage Drop
• High Frequency Operation
• Guard Ring for Enhanced Ruggedness and Long Term
Reliability
• Surface Mount
• Lightweight
JANS1N6844U3
15LJQ100
REF: MIL-PRF-19500/679
• ESD Rating: Class NS per MIL-STD-750, Method 1020
PD-91855C
15LJQ100, 1N6844U3
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Voltage Ratings
Parameters Limits Units Conditions
IF(AV) Max. Average Forward Current 15 A 50% duty cycle @ TC = 125°C, rectangular waveform
See Fig. 5
IFSM Max. Peak One Cycle Non - Repetitive 250 A @ tp = 8.3 ms half-sine
Surge Current
Absolute Maximum Ratings
Pulse Width < 300µs, Duty Cycle < 2%
Parameters Limits Units Conditions
TJMax.Junction Temperature Range -65 to 150 °C
Tstg Max. Storage Temperature Range -65 to 150 °C
RthJC Max. Thermal Resistance, Junction 2.0 °C/W DC operation See Fig. 4
to Case
wt Weight (Typical) 1.0 g
Die Size 125X125 mils
Case Style SMD-0.5
Thermal-Mechanical Specifications
Parameters Limits Units Conditions
VFM Max. Forward Voltage Drop 0.70 V @ 5.0A
See Fig. 10.90 V @ 15A
1.0 V @ 20A
0.58 V @ 5.0A
0.72 V @ 15A
0.85 V @ 5.0A TJ = -55°C
IRM Max. Reverse Leakage Current 50 µAT
J
= 25°C VR = rated VR
See Fig. 2 10 mA TJ = 125°C
CTMax. Junction Capacitance 600 pF VR = 5VDC ( 1MHz, 25°C )
LSTypical Series Inductance 4.8 nH Measured from center of cathode pad to center of
anode pad
Electrical Specifications
TJ
= 25°C
TJ =1 25°C
100
Part number 1N6844U3
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
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15LJQ100, 1N6844U3
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
0.1
1
10
100
0.0 0.5 1.0 1.5
FM
F
Instantaneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
T = -55°C
J
J
J
J
0.0001
0.001
0.01
0.1
1
10
100
1000
0 20 40 60 80 100
R
R
75°C
50°C
25°C
Reverse Voltage - V (V)
Reverse Current - I (mA)
125°C
150°C
T = 175°C
J
A
100
1000
0 20406080100
T = 25°C
J
Reverse Voltage - V (V)
R
T
Junction Capacitance - C (pF)
A
15LJQ100, 1N6844U3
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Fig. 5 - Max. Allowable Case Temperature Vs.
Average Forward Current
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
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Data and specifications subject to change without notice. 10/2012
1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
Thermal Response ( Z thJC )
D = 0.4
D = 0.5
D = 0.2
D = 0.1
D = 0.3
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0 5 10 15 20 25
Average Forward Current - I F(AV) (A)
0
20
40
60
80
100
120
140
160
Allowable Case Temperature - (°C)
RthJC (DC) = 2°C/W
Square Wave (D=0.50)
80% Rated VR applied
DC
