S7018-1010N - Hamamatsu Photonics K.K.

S7018-1010 is a FFT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image

sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.

By operating this image sensor in MPP mode, the dark signal can be exceedingly reduced. Moreover, use of the low-noise readout amplifier

enables low-light-level detection and long integration time, thus achieving a wide dynamic range.

S7018-1010 has an effective pixel size of 24 × 24 µm and is available in active area of 24.576 (H) × 24.576 (V) mm.

Features Applications

IMAGE SENSOR

CCD area image sensor

1024 × 1024 pixels, front-illuminated FFT-CCD

S7018-1010

■ Selection and order guide

Type No. Cooling Number of

total pixels

Number of

active pixels

Active area

[mm (H) × mm (V)]

S7018-1010 Non-cooled 1048 × 1032 1024 × 1024 24.576 × 24.576

A window material can be selected upon need, and the following is available.

Temporary window (standard) : expressed by N #

FOP: expressed by F #

# This should be added at the end of a type No. when ordered.

ex. S7018-1010N: temporary window

■ General ratings

Parameter Specification

CCD structure Full frame transfer

Fill factor 100 %

Number of active pixels 1024 (H) × 1024 (V)

Pixel size 24 (H) × 24 (V) µm

Active area 24.576 (H) × 24.576 (V) mm

Vertical clock phase 2 phase and 2line

Horizontal clock phase 2 phase and 2line

Output circuit

Bi-directional readout

Two-stage MOSFET source follower with load resistance for high speed readout

One-stage MOSFET source follower for low noise readout

Package 48 pin metal package

Window Temporary window

FOP is available upon request

● 1024 (H) × 1024 (V) pixel format

● Pixel size: 24 × 24 µm

● 100 % fill factor

● Wide dynamic range

● Low dark current

● Low readout noise

● MPP operation

● Astronomy

● Scientific measuring instrument

● Fluorescence spectrometer

● Raman spectrophotometer

● Optical and spectrophotometric analyzer

● For low-light-level detection requiring

CCD area image sensor

S7018-1010

■ Absolute maximum ratings (Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

Operating temperature Topr -50 - +30 °C

Storage temperature Tstg -50 -+70 °C

OD voltage VODA, VODB -0.5 - +25 V

RD voltage VRDA, VRDB -0.5 -+18 V

ISV voltage VISV -0.5 - +18 V

IGV voltage VIG1V, VIG2V -10 -+15 V

SG voltage VSGA, VSGB -10 - +15 V

OG voltage VOGA, VOGB -10 -+15 V

RG voltage VRGA, VRGB -10 - +15 V

TG voltage VTGA, VTGB -10 -+15 V

Vertical clock voltage

VP1AV, VP2AV

VP1BV, VP2BV

VP1CV, VP2CV

VP1DV, VP2DV

-10 - +15 V

Horizontal clock voltage

VP1AH, VP2AH

VP3AH, VP4AH

VP1BH, VP2BH

VP3BH, VP4BH

-10 -+15 V

■ Operating conditions (MPP mode, Ta=25 °C)

Parameter Symbol Min. Typ. Max. Unit

High speed readout 12 15 18

Output transistor

drain voltage Low noise readout VODA, VODB 18 20 22 V

Reset drain voltage VRDA, VRDB 11.5 12 12.5 V

Output gate voltage VOGA, VOGB 135V

Substrate voltage VSS - 0 - V

Test point (vertical input source) VISV -VRDA

VRDB -V

Test point (vertical input gate) VIG1V, VIG2V -8 0 - V

High

VP1AVH, VP2AVH

VP1BVH, VP2BVH

VP1CVH, VP2CVH

VP1DVH, VP2DVH

468

Vertical shift register

clock voltage

Low

VP1AVL, VP2AVL

VP1BVL, VP2BVL

VP1CVL, VP2CVL

VP1DVL, VP2DVL

-9 -8 -7

High

VP1AHH, VP2AHH

VP3AHH, VP4AHH

VP1BHH, VP2BHH

VP3BHH, VP4BHH

4 6 8

Horizontal shift register

clock voltage

Low

VP1AHL, VP2AHL

VP3AHL, VP4AHL

VP1BHL, VP2BHL

VP3BHL, VP4BHL

-9 -8 -7

High VSGAH, VSGBH 468

Summing gate voltage Low VSGAL, VSGBL -9 -8 -7 V

High VRGAH, VRGBH 4 6 8

Reset gate voltage Low VRGAL, VRGBL -9 -8 -7 V

High VTGAH, VTGBH 468

Transfer gate voltage Low VTGAL, VTGBL -9 -8 -7 V

CCD area image sensor

S7018-1010

■ Electrical characteristics (Ta=25 °C)

Parameter Symbol Remark Min. Typ. Max. Unit

High speed readout - - 10,000

Signal output requency Low noise readout fc - - 80 2,000 kHz

High speed readout - - 10,000

Reset clock frequency Low noise readout frg --80 2,000 kHz

Vertical shift register capacitance

CP1AV, CP2AV

CP1BV, CP2BV

CP1CV, CP2CV

CP1DV, CP2DV

- - 22,000 - pF

Horizontal shift register capacitance

CP1AH, CP2AH

CP3AH, CP4AH

CP1BH, CP2BH

CP3BH, CP4BH

- - 90 -pF

Summing gate capacitance CSGA, CSGB --5-pF

Reset gate capacitance CRGA, CRGB - - 5 - pF

Transfer gate capacitance CTGA, CTGB - - 150 - pF

Transfer efficiency CTE *10.99995 0.99999 - -

High speed readout 5 8 11

DC output level Low noise readout Vout *2

12 15 18 V

High speed readout -500 -

Output impedance Low noise readout Zo *2

-3 k -W

High speed readout - 60 -

Power dissipation Low noise readout P*2, *3

-15-

*1: Charge transfer efficiency per pixel, measured at half of the full well capacity.

*2: For high speed readout, VOD=15 V. For low noise readout, VOD=20 V, Load resistance=22 kW.

*3: Power dissipation of the on-chip amplifier.

■ Electrical and optical characteristics (Ta=25 °C, unless otherwise noted)

Parameter Symbol Remark Min. Typ. Max. Unit

Saturation output voltage Vsat - - Fw × Sv - V

Vertical 150 300 -

Full well capacity Horizontal Fw -200 450 -ke-

High speed readout 1.2 1.6 -

CCD conversion

efficiency Low noise readout Sv *4

1.3 1.7 - µV/e-

25 °C -1,000 3,000

Dark current

(MPP mode) 0 °C DS *5

-50 150 e-/pixel/s

High speed readout - 60 120

Readout noise Low noise readout Nr *6

-612

e-rms

Dynamic range (area scanning) DR *712,500 50,000 - -

Spectral response range l--

400 to

1,100 -nm

Photo response non-uniformity PRNU *8- - ±10 %

Point defects *9--10

Cluster defects *10 --0

Blemish

(grade: 0 *12)

Column defects

*11 --0

*4: For high speed readout, VOD=15 V. For low noise readout, VOD=20 V, Load resistance=22 kW.

*5: Dark current nearly doubles for every 5 to7 °C increase in temperature.

*6: For high speed readout, -40 °C, operating frequency is 1 MHz.

For low noise readout, -40 °C, operating frequency is 80 kHz.

*7: DR=Fw / Nr, In case of low noise readout

*8: Measured at half of the full well capacity. PRNU (%)=noise / signal × 100, noise: fixed pattern noise (peak to peak)

*9: White spots > 3 % of full well at 0 °C after Ts=1 s, Black spots > 50 % reduction in response relative to adjacent pixels

*10: continuous 2 to 9 point defects

*11: continuous > 10 point defects

*12: Please make contact with sales office about other grades.

CCD area image sensor

S7018-1010

■ Pin connections

Pin No. Symbol Description Remark

1NC - -

2NC - -

3NC --

4P1CV CCD vertical register clock C-1 Same timing as P1AV

5P2CV CCD vertical register clock C-2 Same timing as P2AV

6P1AV CCD vertical register clock A-1 -

7P2AV CCD vertical register clock A-2 -

8TGA Transfer gate A Same timing as P2AV

9 RDA Reset drain A -

10 ODA Output transistor drain A (high speed readout) -

11 OSA Output transistor source A (high speed readout) -

12 RGA Reset gate A -

13 OGA Output gate A -

14 SGA Summing gate A -

15 P4AH CCD horizontal register clock A-4 -

16 P3AH CCD horizontal register clock A-3 -

17 P2AH CCD horizontal register clock A-2 -

18 P1AH CCD horizontal register clock A-1 -

19 NC --

20 P4BH CCD horizontal register clock B-4 Same timing as P4AH

21 P3BH CCD horizontal register clock B-3 Same timing as P3AH

22 P2BH CCD horizontal register clock B-2 Same timing as P2AH

23 P1BH CCD horizontal register clock B-1 Same timing as P1AH

24 SGB Summing gate B -

25 OGB Output gate B Shorted to OGA

26 RGB Reset gate B Shorted to RGA

27 OSB Output transistor source B (low noise readout) -

28 ODB Output transistor drain B (low noise readout) -

29 RDB Reset drain B Shorted to RDA

30 TGB Transfer gate B Shorted to TGA

31 P2BV CCD vertical register clock B-2 Shorted to P2AV

32 P1BV CCD vertical register clock B-1 Shorted to P1AV

33 P2DV CCD vertical register clock D-2 Shorted to P2CV

34 P1DV CCD vertical register clock D-1 Shorted to P1CV

35 NC --

36 NC - -

37 NC --

38 NC - -

39 NC --

40 NC - -

41 NC --

42 NC - -

43 SS Substrate (GND) -

44 NC - -

45 NC --

46 ISV Test point (vertical input source) shorted to RDA

47 IG2V Test point (vertical input gate-2) shorted to 0 V

48 IG1V Test point (vertical input gate-1) shorted to 0 V

CCD area image sensor

S7018-1010

400 500 600 700

WAVELENGTH (nm)

800 900 1000 1100 1200

QUANTUM EFFICIENCY (%)

(Typ. Ta=25 ˚C)

KMPDB0051EA

■ Spectral response without window

400 500 600 700 800

WAVELENGTH (nm)

TRANSMITTANCE (%)

900 1000 1100 1200

(Typ. Ta=25 ˚C)

100

FOP

KMPDB0109EA

KMPDA0100EA

■ Dimensional outline (unit: mm)

ACTIVE AREA 24.576

33.53

36.07

PIN No. 1 *

48 47

OPEN AREA 28.0

ACTIVE AREA 24.576

R1.52 R2.79

OPEN AREA 28.0

30.48

5.21

7.49

2.54

0.46

33.53

36.07

30.48

0.56TEMPORARY WINDOW

1.02

2.54

CAP

* PIN No. 1: BROWN GLASS SEAL

PIN No. 2 to 48: GREEN GLASS SEAL

■ Spectral transmittance characteristic

of window material

CCD area image sensor

S7018-1010

KMPDC0090EA

■ Device structure, line output format

......

....

1023

1024

1023 1024

IG1V IG2V ISV SS

RGA

TGA

P2AV

P1AV

P2CV

P1CV

RDA

47 46

SGB

P1BH

TGB

RGB

RDB

OGB

P2DV

P1DV

4 BLANK4 BLANK

1024

SIGNAL OUT

4 ISOLATION 4 ISOLATION

OSB

ODB

OGA 13

OSA 11

ODA 10

P2BH

P3BH

P4BH

P1AH

P2AH

P3AH

P4AH

SGA

LOW NOISE AMPLOW NOISE AMP

HIGH SPEED

READOUT

LOW NOISE

READOUT

HIGH SPEED AMPHIGH SPEED AMP

......

4 OPTICAL

BLACK

4 OPTICAL

BLACK

P1BV

P2BV

D10

D11

D12

S1023

S1024

D13

D14

D15

D16

D17

D18

D19

D20

D21

D22

D23

D24

● Register configuration

KMPDC0091EA

HIGH SPEED AMP LOW NOISE AMP

● Transfer selection

KMPDC0092EA

OGA SGA P2*H P1*H P4*H

CHARGE TRANSFER DIRECTION

HIGH SPEED READOUT

PHASE1 PHASE2

P3*H SGB

*INDICATES A AND B

OGB OGA SGA P2*H P1*H P4*H

CHARGE TRANSFER DIRECTION

LOW NOISE READOUT

PHASE2 PHASE1

P3*H SGB

*INDICATES A AND B

OGB

CCD area image sensor

S7018-1010

Parameter Symbol Remark Min. Typ. Max. Unit

Pulse width Tpwv 5 - - µs

P1AV, P1BV, P1CV, P1DV

P2AV, P2BV, P2CV, P2DV, TGA, TGB Rise and fall time Tprv, Tpfv *!

200 - - ns

Pulse width Tpwh 250 - - ns

Rise and fall time Tprh, Tpfh 10 - - nsPHASE1, PHASE2

Duty ratio -

*!

-50 - %

Pulse width Tpws 250 - - ns

Rise and fall time Tprs, Tpfs 10 - - nsSGA, SGB

Duty ratio -

-50-%

Pulse width Tpwr 100 - - ns

RGA, RGB Rise and fall time Tprr, Tpfr -5 - - ns

TGA, TGB - PHASE1 Overlap time Tovr - 3 - - µs

Note) In case of low noise readout.

*13: Symmetrical pulses should be overlapped at 50 % of maxmum amplitude.

KMPDC0093EA

■ Timing chart

● Area scanning 1 (low dark current mode)

INTEGRATION PERIOD

(Shutter must be open)

P1AV, P1BV

P1CV, P1DV

RGA, RGB

OSA, OSB

2AV, P2BV, P2CV

P2DV, TGA, TGB

PHASE1*

PHASE2*

SGA, SGB

READOUT PERIOD (Shutter must be closed)

ENLARGED VIEW

4..1031

Tpwv

Tovr

Tpwr

D1 D2 D3 D4 D22 D23 D24

D5..D12, S1..S1024, D13..D21

* REFER TO “Transfer section”

P2AV, P2BV, P2CV, P2DV

TGA, TGB

PHASE1

PHASE2

SGA, SGB

RGA, RGB

OSA, OSB

Tpwh, Tpws

123 1032←1024+8 (ISOLATION)

Pixel format

Left ¬ Horizontal direction ® Right

Blank Optical black Isolation Effective Isolation Optical black Blank

4441024444

Top ¬ Vertical direction ® Bottom

Isolation Effective Isolation

410244

CCD area image sensor

S7018-1010

HAMAMATSU PHOTONICS K.K., Solid State Division

1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com

U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218

Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658

France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10

United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777

North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01

Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

KMPDC0101EA

● Area scanning 2 (large full well mode)

INTEGRATION PERIOD

(Shutter must be open)

P1AV, P1BV

P1CV, P1DV

RGA, RGB

OSA, OSB

2AV, P2BV, P2CV

P2DV, TGA, TGB

PHASE1

PHASE2

SGA, SGB

READOUT PERIOD (Shutter must be closed)

ENLARGED VIEW

4..1031

1032←1024+8 (ISOLATION)

Tpwv

Tovr

Tpwr

D1 D2 D3 D4 D22 D23 D24

D5..D12, S1..S1024, D13..D21

P2AV, P2BV, P2CV, P2DV

TGA, TGB

PHASE1

PHASE2

SGA, SGB

RGA, RGB

OSA, OSB

Tpwh, Tpws

123

Parameter Symbol Remark Min. Typ. Max. Unit

Pulse width Tpwv 5 - - µs

P1AV, P1BV, P1CV, P1DV

P2AV, P2BV, P2CV, P2DV, TGA, TGB Rise and fall time Tprv, Tpfv *"

200 - - ns

Pulse width Tpwh 250 - - ns

Rise and fall time Tprh, Tpfh 10 - - nsPHASE1, PHASE2

Duty ratio -

*"

-50 - %

Pulse width Tpws 250 - - ns

Rise and fall time Tprs, Tpfs 10 - - nsSGA, SGB

Duty ratio -

-50-%

Pulse width Tpwr 100 - - ns

RGA, RGB Rise and fall time Tprr, Tpfr -5 - - ns

TGA, TGB - PHASE1 Overlap time Tovr - 3 - - µs

Note) In case of low noise readout.

*14: Symmetrical pulses should be overlapped at 50 % of maxmum amplitude.

■ Precaution for use (electrostatic countermeasures)

● Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with

an earth ring, in order to prevent electrostatic damage due to electrical charges from friction.

● Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge.

● Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to dis-

charge.

● Ground the tools used to handle these sensors, such as tweezers and soldering irons.

It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the

amount of damage that occurs.

■ Element cooling/heating temperature incline rate

When coupled to an FOP, element cooling/heating temperature incline rate should be set at less than 5 K/min.

Cat. No. KMPD1032E03

Feb. 2003 DN