BAS16WS
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Rev. 2.1, 12-Jul-17 1Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Available
Models
PARTS TABLE
PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAS16WS BAS16WS-E3-08 or BAS16WS-E3-18
BAS16WS-HE3-08 or BAS16WS-HE3-18 Single A6 Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100 V
Forward current (continuous) IF250 mA
Non-repetitive peak forward current
t = 1 μs IFSM 2A
t = 1 ms IFSM 1A
t = 1 s IFSM 0.5 A
Power dissipation Ptot 200 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air RthJA 650 K/W
Junction temperature Tj150 °C
Storage temperature range Tstg -65 to +150 °C
Operating temperature range Top -55 to +150 °C
BAS16WS
www.vishay.com Vishay Semiconductors
Rev. 2.1, 12-Jul-17 2Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
IF = 150 mA VF1.250 V
IF = 1 mA VF0.715 V
IF = 10 mA VF0.855 V
IF = 50 mA VF1V
Leakage current
VR = 75 V IR1000 nA
VR = 25 V, TJ = 150 °C IR30 μA
VR = 75 V, TJ = 150 °C IR50 μA
Diode capacitance VR = 0, f = 1 MHz CD2pF
Reverse recovery time IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 Ωtrr 6ns
18105
I
F
(mA)
V
F
(V)
T
j
= 100 °C
T
j
= 25 °C
10- 2
10- 1
102
103
1
10
120
17438
f = 1 kHz
Tj = 25 °C
IF (mA)
Rf (Ω)
10
102
103
104
10-2 10-1 110
2
10
2
5
2
5
2
5
2
5
18185
P
tot
(mW)
T
amb
(°C)
0
100
400
500
200
300
100 2000
17440 VR (V)
0.7
0.8
0.9
1.0
1.1 f = 1 MHz
Tj = 25 °C
2086410
CD (VR)
CD (0 V)
BAS16WS
www.vishay.com Vishay Semiconductors
Rev. 2.1, 12-Jul-17 3Document Number: 85752
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
17441 Tj (°C)
IR (nA)
10
102
103
104
100 200
2
5
2
5
2
5
2
5
V
R
= 20 V
1
0
Rev. 6 - Date: 23.Sept.2016
17443
Document no.: S8-V-3910.02-001 (4)
Created - Date: 24.August.2004
Footprint recommendation:
0.6 [0.024]
1.1 [0.043]
1.5 [0.059]
2.50 [0.098]
2.85 [0.112]
1.60 [0.063]
1.95 [0.077]
0° - 8°
0.25 [0.010]
0.40 [0.016]
Cathode bar
0.20 [0.008]
0.40 [0.016]
0.8 [0.031]
0.2 [0.008]
1.15 [0.045]
0.10 [0.004]
0.1 [0.004] max.
0.15 [0.006]
1.6 [0.063]
0.8 [0.031] 0.8 [0.031]
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Revision: 08-Feb-17 1Document Number: 91000
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