CM50DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 50 Amperes/1200 Volts A N D P - NUTS (3 TYP) TC MEASURED POINT E C2E1 E2 C1 E2 G2 CM W Y Q (2 PLACES) F X G F G1 E1 B M K K J R H (4 PLACES) T V U T S U C L G2 E2 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking RTC C2E1 C1 E2 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches A 3.70 B 1.89 C 1.18 +0.04/-0.02 D 3.150.01 E 0.43 F 0.16 G 0.71 H 0.02 J 0.53 K 0.91 L 0.83 M 0.67 Millimeters 94.0 48.0 30.0 +1.0/-0.5 80.00.25 11.0 4.0 18.0 0.5 13.5 23.0 21.2 17.0 Dimensions N P Q R S T U V W X Y Z Inches 0.28 M5 Dia. 0.26 0.02 0.30 0.63 0.10 1.0 0.94 0.51 0.47 0.47 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Millimeters 7.0 M5 6.5 Dia. 4.0 7.5 16.0 2.5 25.0 24.0 13.0 12.0 12.0 Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50DU-24Fis a 1200V (VCES), 50 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 50 24 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMODTM 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Junction Temperature Storage Temperature Symbol CM50DU-24F Units Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES 20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes IEM 100* Amperes Pc 320 Watts Mounting Torque, M5 Main Terminal - 31 in-lb Mounting Torque, M6 Mounting - 40 in-lb - 310 Grams Viso 2500 Volts Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Static Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 20 A Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25C - 1.8 2.4 Volts IC = 50A, VGE = 15V, Tj = 125C - - Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V - 550 - nC Emitter-Collector Voltage** VEC IE = 50A, VGE = 0V - - * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Max. 1.9 3.2 Volts Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMODTM 50 Amperes/1200 Volts Dynamic Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Inductive Turn-on Delay Time td(on) Load Rise Time tr Switch Turn-off Delay Time Times Fall Time Test Conditions VCE = 10V, VGE = 0V Min. Typ. - - Max. 20 Units nf - - 0.85 nf - - 0.5 nf VCC = 600V, IC = 50A, - - 100 ns VGE1 = VGE2 = 15V, - - 50 ns td(off) RG = 6.3, - - 300 ns tf Inductive Load - - 300 ns Diode Reverse Recovery Time** trr Switching Operation - - 150 ns Diode Reverse Recovery Charge** Qrr IE = 50A - 2.1 - C Typ. Max. Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Test Conditions Min. Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference - Units 0.39 C/W 0.70 C/W Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference - - - 0.26 - 0.045 Point per Outline Drawing Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, C/W Tc Reference Point Under Chip Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMODTM 50 Amperes/1200 Volts COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 80 3 10 9.5 11 15 VGE = 20V 9 60 8.5 40 20 0 8 0 1 2 3 2 1 0 4 5 VGE = 15V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 20 40 60 80 Tj = 25C 4 3 2 10 12 14 16 18 20 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 0 1.0 2.0 3.0 100 100 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE, VGE Irr 101 101 VCC = 600V VGE = 15V RG = 6.3 Tj = 25C Inductive Load 100 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) trr IC = 50A 16 VCC = 400V VCC = 600V 12 8 4 0 0 tr 101 200 400 600 GATE CHARGE, QG, (nC) 100 100 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 20 tf td(off) td(on) Cres 101 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 102 102 VCC = 600V VGE = 15V RG = 6.3 Tj = 125C Inductive Load Coes VGE = 0V 10-1 10-1 4.0 SWITCHING TIME, (ns) Cies 101 800 101 102 COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) CAPACITANCE, Cies, Coes, Cres, (nF) 101 REVERSE RECOVERY CURRENT, Irr, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 8 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 REVERSE RECOVERY TIME, trr, (ns) 6 COLLECTOR-CURRENT, IC, (AMPERES) Tj = 25C 4 0 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 100 IC = 20A 1 0 100 IC = 100A IC = 50A 101 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 Per Unit Base Rth(j-c) = 0.39C/W (IGBT) Rth(j-c) = 0.7C/W (FWDi) Single Pulse TC = 25C 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3