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Trench Gate Design
Dual IGBTMOD™
50 Amperes/1200 Volts
CM50DU-24F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
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Dimensions Inches Millimeters
A 3.70 94.0
B 1.89 48.0
C 1.18 +0.04/-0.02 30.0 +1.0/-0.5
D 3.15±0.01 80.0±0.25
E 0.43 11.0
F 0.16 4.0
G 0.71 18.0
H 0.02 0.5
J 0.53 13.5
K 0.91 23.0
L 0.83 21.2
M 0.67 17.0
Dimensions Inches Millimeters
N 0.28 7.0
P M5 M5
Q Dia. 0.26 6.5 Dia.
R 0.02 4.0
S 0.30 7.5
T 0.63 16.0
U 0.10 2.5
V 1.0 25.0
W 0.94 24.0
X 0.51 13.0
Y 0.47 12.0
Z 0.47 12.0
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module con-
sists of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ UPS
£ Battery Powered Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM50DU-24Fis a
1200V (VCES), 50 Ampere Dual
IGBTMOD™ Power Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 50 24
Q (2
PLACES)
CM
A
B
W
C
D
R
U U
TVT
K K
P - NUTS (3 TYP)
C2E1 E2 C1
X
M
N
E
F
G
F
J
Y
L
S
H (4
PLACES)
E2 G2G1 E1
TC MEASURED POINT
C2E1
RTC
RTC
E2
E1
G1
C1
E2
G2
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CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol CM50DU-24F Units
Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts
Collector Current (Tc = 25°C) IC 50 Amperes
Peak Collector Current ICM 100* Amperes
Emitter Current** (Tc = 25°C) IE 50 Amperes
Peak Emitter Current** IEM 100* Amperes
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 320 Watts
Mounting Torque, M5 Main Terminal – 31 in-lb
Mounting Torque, M6 Mounting – 40 in-lb
Weight – 310 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts
Static Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 20 μA
Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 5 6 7 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C – 1.8 2.4 Volts
IC = 50A, VGE = 15V, Tj = 125°C – 1.9 – Volts
Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V – 550 – nC
Emitter-Collector Voltage** VEC IE = 50A, VGE = 0V – – 3.2 Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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3
CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 20 nf
Output Capacitance Coes VCE = 10V, VGE = 0V – – 0.85 nf
Reverse Transfer Capacitance Cres – – 0.5 nf
Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 50A, – – 100 ns
Load Rise Time tr VGE1 = VGE2 = 15V, – – 50 ns
Switch Turn-off Delay Time td(off) RG = 6.3, – – 300 ns
Times Fall Time tf Inductive Load – – 300 ns
Diode Reverse Recovery Time** trr Switching Operation – – 150 ns
Diode Reverse Recovery Charge** Qrr IE = 50A – 2.1 – μC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, Tc Reference – 0.39 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, Tc Reference – – 0.70 °C/W
Point per Outline Drawing
Thermal Resistance, Junction to Case Rth(j-c)'Q Per IGBT 1/2 Module, – 0.26 °C/W
Tc Reference Point Under Chip
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.045 – °C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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CM50DU-24F
Trench Gate Design Dual IGBTMOD™
50 Amperes/1200 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 200
16
12
8
4
0
400
800
V
CC
= 600V
600
V
CC
= 400V
IC = 50A
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, trr, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
102
100101102
101
100
t
rr
I
rr
10
2
10
1
10
0
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
0
10
1
10
2
10
2
10
1
10
0
td(off)
t
d(on)
t
r
VCC = 600V
VGE = ±15V
RG = 6.3 Ω
Tj = 125°C
Inductive Load
t
f
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10-1 100102
102
101
100
10-1
V
GE
= 0V
10
1
C
ies
C
oes
0 1.0 2.0 3.0 4.0
100
101
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
102
EMITTER CURRENT, I
E
, (AMPERES)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
0 6 8 1210 181614 20
4
3
2
1
0
T
j
= 25°C
I
C
= 20A
IC = 100A
IC = 50A
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS
)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
3
0 20 40 60 80
2
1
0100
V
GE
= 15V
Tj = 25°C
Tj = 125°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0 1 2 3 4
0
T
j
= 25
o
C
20
40
60
80
100
V
GE
= 20V
15
10
9.5
9
8.5
8
11
V
CC
= 600V
V
GE
= ±15V
R
G
= 6.3 Ω
T
j
= 25°C
Inductive Load
C
res
T
j
= 25°C
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
101
10-5 10-4 10-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
10
-1
10
-2
10
-3
Z
th
= R
th
• (NORMALIZED VALUE)
Per Unit Base
R
th(j-c)
= 0.39°C/W (IGBT)
R
th(j-c)
= 0.7°C/W (FWDi)
Single Pulse
T
C
= 25°C
