Rugged Power MOSFETs IRF9520, IRF9521 IRF9522, IRF9523 Avalanche-Energy-Rated P-Channel Power MOSFETs -5 A and -6 A, -60 V and -100 V rpsiom = 0.60 Q and 0.80 Q Features: a Single pulse avalanche energy rated a SOA is power-dissipation limited a Nanosecond switching speeds a Linear transfer characteristics a High input impedance The IRF9520, IRF9521, IRF9522 and IRF9523 are advanced power MOSFETs designed, tested, and guaranteed to with- stand a specified level of energy in the breakdown ava- lanche mode of operation. These are p-channel enhance- ment-mode silicon-gate power field-effect transistors de- signed for applications such as switching regulators, switch- ing converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. The !IRF-types are supplied in the JEDEC TO-220AB piastic DRAIN (FLANGE) |O File Number 2281 TERMINAL DIAGRAM 92CS-43262 P-CHANNEL ENHANCEMENT MODE TERMINAL DESIGNATION SOURCE Jd = DRAIN e package. TOP View GATE 92CS-39528 JEDEC TO-220AB ABSOLUTE-MAXIMUM RATINGS CHARACTERISTIC IRF9520 IRF9521 IRF9522 IRF9523 UNITS Drain-Source Voltage @ Vos -100 +60 -100 -60 Vv Drain-Gate Voltage (Ras = 20 kQ) Vocr -100 -60 -100 -60 Vv Continuous Drain Current lp @ Te = 25C 6 6 5 5 A Continuous Drain Current lp @ Te = 100C 4 4 3.5 -3.5 A Pulsed Drain Current @ low -24 -24 -20 -20 A Gate-Source Voitage Ves +20 Vv Maximum Power Dissipation Po @ Te = 25C 40 (See Fig. 14) Ww Linear Derating Factor 0.32 (See Fig. 14) wre Single-Pulse Avalanche Energy Rating @ i 370 mJ Operating Junction and Ty _ Storage Temperature Range Tag 55 to +150 Cc Lead Temperature 300. (0.063 in. [1.6 mm] from case for 10 s) C 6-366Rugged Power MOSFETs IRF9520, IRF9521 IRF9522, IRF9523 ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified CHARACTERISTIC TYPE. MIN. | TYP. | MAX. [UNITS TEST CONDITIONS Drain-Source Breakdown Voltage BVpss | IRF9520 | _ _ _ = iRF9s22 | 1 V_| Vos= Ov IRF9521 - =- inF9523 | ~ V__| to = -250uA Gate Threshold Voltage Vesum ALL -2.0 -4.0 Vv Vos = Ves, lo = -250 vA Gate-Source Leakage Forward less ALL = = -500 nA Ves = -20 V Gate-Source Leakage Reverse loss ALL = - 500 nA Vas = 20 V Zero-Gate Voltage Drain Current {oss ALL -- _ -250 pA Vos = Max. Rating, Ves = 0 V _ |-1000 | pA Vos = Max. Rating x 0.8, Ves = 0 V, Te = 125C On-State Drain Current @ loton IRF9520 IRFOS21 * Vos > f xr Ves = -10V IRF9522 os ton) DSton) max, GS InF9s23 | ~5 = = A Static Drain-Source On-State Toston! IRF9520 Resistance @ | inFesai | ~ | O85 | O68 | A Vas = 10 V, In = -3.5A IRF9522 inFes23 | | 06 | O8 | A Forward transconductance Qs ALL 09 2 = S(G) | Vos > loon x Fostom max, Ip = -3.5 A Input Capacitance Cas ALL 300 = pF _ _ = = f=1, Output Capacitance Coas ALL 200 pF ae Fo os = -25 V, f= 1.0 MHz Reverse Transfer Capacitance Cres ALL -- 50 _ pF . Turn-On Delay Time tation ALL = 25 50 ns Veo = 0.5 BVoss, Ip = -3.5 A, Zo = 502 Rise Time t ALL = 50 100 ns See Fig. 17 Turn-Off Delay Time tatom ALL 50 100 ns (MOSFET switching times are essentially Fall Time tt ALL 50 100 ns independent of operating temperature.) Total Gate Charge Q, ALL _ 16 22 nc | Ves =-15 V, Ip = -8.0 A, Vos = 0.8 Max. Rating. (Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Gate-Source Charge Qn ALL 9 13.5 nc essentiaily independent of operating Gate-Drain (Miller) Charge Qea ALL _ 7 10.5 nG | temperature.) Internal Drain Inductance Lo _ 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL inductances. - 45 - nH | Measured from the 2 drain lead, 6mm (0.25 in.) from package to lo center of die. internal Source Inductance Ls ALL _ 75 _ nH Measured from the G + source lead, 6 mm s (0.25 in.) from package to source s bonding pad. Junction-to-Case Rac ALL _ _ 3.12 | C/W Case-to-Sink Recs ALL. = 0.1 __| C/W | Mounting surface flat, smooth, and greased. Junction-to-Ambient Raa ALL = = 80 C/W _] Typical socket mount. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Continuous Source Current fs tRF9520 6 A Modified MOSFET symbol o (Body Diode) IRF9521 ~ 7 showing the integral IRF9522 reverse P-N junction rectifier. inFeso3 | | ~ | S | A t Puise Source Current Isa IRF9520 24 A G b (Body Diode) @ IRF9521 ~ ~ ~ (RF9522 tnFgs23 | | ~ | ~O.| A 3 Diode Forward Voltage @ Vso (RF9520 = = = IRF9521 - 15 Vs | Te = 25C, Is = -6 A, Vas = OV IRF9522 . _ _ IRF9523 - _ -15 Vv Tc = 25C, Is = -5 A, Vag = OV Reverse Recovery Time bo ALL, = 230 = ns T= 150C, f = -6 A, dip/dt = 100 A/us_ Reverse Recovered Charge Onn ALL, = 13 = _uC T, = 150C, Ip = -6 A, die/dt = 100 A/us _ . Intrinsic turn-on time is negligible. Forward Turn-on Time ton ALL Turn-on speed is substantially controlled by Ls + Lo. @ T, = 28C to 150C. Pulse Test: Pulse width < 300 ys, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Voo = 25 V, Starting T, = 25C, L = 15.4 mH, Re = 25 0, Peak i = 6 A (See Figs. 15 & 16). 6-367Rugged Power MOSFETs IRF9520, IRF9521 IRF9522, IRF9523 6-368 v Vos > 'pion) * max. Ip. ORAIN CURRENT (AMPERES) 4p, DRAIN CURRENT (AMPERES) 0 -10 -20 -30 -40 -50 G 2 4 6 4 10 Vos, DAAIN-TO-SOURCE VOLTAGE {VOLTS} Vgg. GATE-TO-SOURCE VOLTAGE (VOLTS) Fig. 1 - Typical output characteristics. Fig. 2 - Typical transfer characteristics. - 100 OPERATION tN THIS - AREA 1S LIMITED BY Apsion) @ -20 = c 3 # -10 = = = = 2 B 75 Z 3? S z z < -10 = 5 3 6 -osf4ic s Ty = 150C MAX. Ringo = 3.12 KAW ~0277\ singe Puise _'AF9S21. -04 -10 -2 -5 ~10 -20 -50~100-200 -500 0 a 2 3 4 5 Vpg, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, DRAIN-TO SOURCE VOLTAGE (VOLTS) 9268-44200 Fig. 3 - Typical saturation characteristics. Fig. 4 - Maximum safe operating area. N tT] 0 % 1 oury Factor, o~ tL. SINGLE PULSE 2 00 THERMAL IMPEDANCE) 2. PER UNIT BASE Rynyc * 3.12 DEG. CW. 3. Tya- Te * Pom Znuelth oor oh 2 5 (ye 5 3 2 5 we 2 5 ol 2 5 1 2 5 0 Zinsclt!/Arnac. NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT} ty, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 - Maximum effective transient thermal impedance, junction-to-case vs. pulse duration.Rugged Power MOSFETs IRF9520, IRF9521 IRF9522, IRF9523 V7 Ty* Ty = 1289C -1.0 4s. TRANSCONDUCTANCE (SIEMENS) Vos > lovon} * PULSE NEGATIVE ipa, REVERSE DRAIN CURRENT (AMPERES) -01 Q 2 4 6 4 ~10 -0.4 -0.6 -0.8 -10 -1.2 -1.4 -16 -18 Ig. ORAIN CURRENT (AMPERES) NEGATIVE Veo, SOURCE-TO-DRAIN VOLTAGE (VOLTS) , 9268-44168 Fig. 6 - Typical transconductance vs. drain current. Fig. 7 - Typical source-drain diode forward vortage. 1.25 2 - & Apsion). ORAIN-TO-SOUALE ON RESISTANCE (NORMALIZED) OVoss, ORAIN-TO-SOURCE SAEAKOOWN VOLTAGE (NORMALIZED) 0.75 . 40 a 0 to 120 100 a 0 0 a0 120 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Fig. 8 - Breakdown voltage vs. temperature. Fig. 9 - Normalized on-resistance vs. temperature. Cag Cyp + Cyg, Coq SHORTED Cre = Cog - 0 t= 1 MHz conta CEE i = FOR TEST CIRCUIT Cag? Ogg 5 SEE FIGURE 18 $ = 3 3 < = $ 5 a 3 3. s S 3 8 e 2 = <a 3 a 2 > 0 +10 -20 0 -40 50 6 8 W 6 20 Vos. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Qy, TOTAL GATE CHARGE inC) Fig. 10 - Typical capacitance vs. drain-to-source voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 6-369Rugged Power MOSFETs IRF9520, IRF9521 IRF9522, IRF9523 20 Rosion} WITH CUARENT oF 2BRSOURATION. INITIAL Ty * 2506. [HEATING EFFECT OF 2.0 us PULSE IS MINIMAL } Vgs =710V [p. DRAIN CURRENT (AMPERES) o Agsion) DAAIN-TO-SOURCE ON RESISTANCE (CHMS) 6 10 5 20 25 5 50 15 100 128 150 Ip. DRAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (C) Fig. 12 - Typical on-resistance vs. drain current. Fig, 13 - Maximum drain current vs. case temperature. AW B tp } ov - Veg=-10 Z NX t = \ VARY tp TO OBTAIN z , \ REQUIRED PEAK 1, - 9208-43278 5 2 N Z \ Fig. 15 - Unclamped inductive test circuit. e eu 2 a 19 5 \ 0 2 864 OO so 0100120140 Te. CASE TEMPERATURE (C) Fig. 14 - Power vs. temperature derating curve. tp BVpss 92CS-43279 Fig. 16 - Unclamped inductive waveforms. CURRENT -Vps REGULATOR O {ISOLATED Ro SUPPLY} L SAME TYPE vo AS DUT BATTERY 4 0-2UF=- SOKA out L t A L pee G [ put Vos = -10 t o | j -1.5mA s O+Vos Ig Ip VARY tp TO OBTAIN CURRENT CURRENT REQUIRED PEAK IL SAMPLING SAMPLING RESISTOR RESISTOR 92C$-4328) 9208-43280 Fig. 17 - Switching time test circuit. Fig. 18 - Gate charge test circuit. 6-370