2N6786
N-Channel MOSFET.
VDSS = 400V
ID = 1.25A
RDS(ON) = 3.6Ω
ΩΩ
Ω
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter Min. Typ. Max. Units
VDSS Drain – Source Breakdown Voltage 400 V
ID Continuous Drain Current 1.25 A
PD Power Dissipation 15 W
RDS(ON) Static Drain – Source On–State Resistance 3.6 Ω
CISS Input Capacitance 170 pF
Qg Total Gate Charge 8.4 nC
ttd(on) Turn–On Delay Time 15 ns
ttr Rise Time 20 ns
ttd(off) Turn–Off Delay Time 35 ns
t
f
Fall Time 30 ns
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.u
k
.
Semel ab Plc rese rves the ri ght to change test conditions, pa rameter limits and package dimensions without notic e. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissi on s dis co ver e d in its us e.
Generated
11-Oct-02
TO39 (TO205AF)
PINOUTS
1 – Source 2 – Gate 3 - Drain
N-Channel MOSFET
in a
Hermetically sealed TO39
Metal Package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
123
