BCV27, BCV47 NPN Silicon Darlington Transistors * For general AF applications 2 3 * High collector current 1 * High current gain * Complementary types: BCV26, BCV46 (PNP) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking Pin Configuration Package BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV27 30 BCV47 60 Collector-base voltage Unit VCBO BCV27 40 BCV47 80 Emitter-base voltage VEBO 10 Collector current IC 500 Peak collector current, tp 10 ms ICM 800 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 C Storage temperature Tstg mA TS 74 C 1 -65 ... 150 2011-10-05 BCV27, BCV47 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value 210 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 , BCV27 30 - - IC = 10 mA, IB = 0 , BCV47 60 - - IC = 100 A, IE = 0 , BCV27 40 - - IC = 100 A, IE = 0 , BCV47 80 - - 10 - - Collector-base breakdown voltage Unit - V(BR)CBO Emitter-base breakdown voltage V(BR)EBO V IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 30 V, IE = 0 , BCV27 - - 0.1 VCB = 60 V, IE = 0 , BCV47 - - 0.1 VCB = 30 V, IE = 0 , TA = 150 C, BCV27 - - 10 VCB = 60 V, IE = 0 , TA = 150 C, BCV47 - - 10 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain1) - hFE IC = 100 A, VCE = 1 V, BCV27 4000 - - IC = 100 A, VCE = 1 V, BCV47 2000 - - IC = 10 mA, VCE = 5 V, BCV27 10000 - - IC = 10 mA, VCE = 5 V, BCV47 4000 - - IC = 100 mA, VCE = 5 V, BCV27 20000 - - IC = 100 mA, VCE = 5 V, BCV47 10000 - - IC = 0.5 A, VCE = 5 V, BCV27 4000 - - IC = 0.5 A, VCE = 5 V, BCV47 2000 - - VCEsat - - 1 VBEsat - - 1.5 Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA 2 2011-10-05 BCV27, BCV47 1Pulse test: t < 300s; D < 2% Electrical Characteristics at T A = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 170 - MHz Ccb - 3 - pF AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 3 2011-10-05 BCV27, BCV47 DC current gain hFE = (IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 BCV 27/47 EHP00307 BCV 27/47 10 3 5 EHP00305 C mA 125 C 10 5 150 C 25 C -50 C 10 2 25 C 5 5 -55 C 10 4 10 1 5 5 10 3 10 -1 10 0 10 0 10 1 2 10 mA 10 3 0 0.5 1.0 C Collector cutoff current ICBO = (TA) VCB = VCEmax IC = (VBEsat), hFE = 10 C BCV 27/47 1.5 V CEsat Base-emitter saturation voltage 10 3 V EHP00304 10 4 BCV 27/47 EHP00306 nA mA CBO 150 C 25 C -50 C 10 2 max 10 3 5 10 2 typ 10 1 10 1 5 10 0 0 1.0 2.0 V 10 0 3.0 V BEsat 0 50 100 C 150 TA 4 2011-10-05 BCV27, BCV47 Transition frequency fT = (IC) VCE = 5 V 10 3 BCV 27/47 Collector-base capacitance Ccb = (VCB) Emitter-base capacitance Ceb = (VEB) 19 EHP00303 pF MHz CCB/CEB fT 15 13 11 10 2 CEB 9 5 7 5 CCB 3 10 1 10 0 10 1 10 2 mA 1 0 10 3 4 8 12 16 V 22 VCB/VEB C Total power dissipation Ptot = (TS) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 400 10 3 BCV 27/47 Ptot max 5 Ptot DC mW EHP00301 tp D= T T 300 Ptot tp 10 2 250 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 200 150 10 1 100 5 50 0 0 15 30 45 60 75 90 105 120 C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-10-05 Package SOT23 BCV27, BCV47 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 0.1 1 2.4 0.15 3 0.1 MAX. 10 MAX. B 1 0.1 10 MAX. 2.9 0.1 0.15 MIN. Package Outline A 5 0...8 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 6 2011-10-05 BCV27, BCV47 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. 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