VISHAY
MMBZ5225 to MMBZ5267
Document Number 85772
Rev. 1.3, 08-Jul-04
Vishay Semiconductors
www.vishay.com
1
18078
12
3
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• Standard Zener voltage tolerance is ± 5 % toler-
ance with a "B" suffix and ± 2 % with suffix "C".
• High temperature soldering guaranteed:
250 °C/10 seconds at terminals.
• These diodes are also available in MiniMELF case
with the type designation ZMM5225...ZMM5267,
SOD-123 case with the type designation
MMSZ5225... MMSZ526 7.
Mechanical Da ta
Case: SOT-23 Plastic case
Weight: approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) On FR - 5 board using recommended solder pad layout
2) On alumina substrate
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) On FR - 5 board using recommended solder pad layout
Parameter Test condition Symbol Value Unit
Zener current (see Table
"Characteristics")
Power dissipation TA = 25 °C Ptot 2251) mW
Ptot 3002) mW
Parameter Test condition Symbol Value Unit
Thermal resistance junction to
ambient air RthJA 5561) °C/W
Maximum junction temperature Tj150 °C
Storage temperature range TS-65 to + 175 °C
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2Document Number 85772
Rev. 1.3, 08-Jul-04
VISHAY
MMBZ5225 to MMBZ5267
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 ° unless otherwise noted
Maxi mum VF = 0.9 V at IF = 10 mA
1)The Zener Impedance is derived from the 1 kHZ AC voltage which res ults when an AC c urrent having an RMS value equal to 10 % of
Partnumber Marking
Code N ominal
Zener
Voltage
Test
Current Maximum Dynamic
Impedance2) Typical
Temp.
of
Coefficient
Maximum Revers e
Leakage Current
VZ @ IZT1 IZT1 ZZT @ IZT ZZK @ IZK αVZ IRVR
VmA Ω Ω %/°C µA V
MMBZ5225 18E 3 20 30 1600 -0.075 50 1
MMBZ5226 8A 3.3 20 28 1600 -0.07 25 1
MMBZ5227 8B 3.6 20 24 1700 -0.065 15 1
MMBZ5228 8C 3.9 20 23 1900 -0.06 10 1
MMBZ5229 8D 4.3 20 22 2000 -0.055 5 1
MMBZ5230 8E 4.7 20 19 1900 ±0.030 5 2
MMBZ5231 8F 5.1 20 17 1600 ±0.030 5 2
MMBZ5232 8G 5.6 20 11 1600 0.038 5 3
MMBZ5233 8H 6 20 7 1600 0.038 5 3.5
MMBZ5234 8J 6.2 20 7 1000 0.045 5 4
MMBZ5235 8K 6.8 20 5 750 0.05 3 5
MMBZ5236 8L 7.5 20 6 500 0.058 3 6
MMBZ5237 8M 8.2 20 8 500 0.062 3 6.5
MMBZ5238 8N 8.7 20 8 600 0.065 3 6.5
MMBZ5239 8P 9.1 20 10 600 0.068 3 7
MMBZ5240 8Q 10 20 17 600 0.075 3 8
MMBZ5241 8R 11 20 22 600 0.076 2 8.4
MMBZ5242 8S 12 20 30 600 0.077 1 9.1
MMBZ5243 8T 13 9.5 13 600 0.079 0.5 9.9
MMBZ5244 8U 14 9 15 600 0.082 0.1 10
MMBZ5245 8V 15 8.5 16 600 0.082 0.1 11
MMBZ5246 8W 16 7.8 17 600 0.083 0.1 12
MMBZ5247 8X 17 7.4 19 600 0.084 0.1 13
MMBZ5248 8Y 18 7 21 600 0.085 0.1 14
MMBZ5249 8Z 19 6.6 23 600 0.086 0.1 14
MMBZ5250 81A 20 6.2 25 600 0.086 0.1 15
MMBZ5251 81B 22 5.6 29 600 0.087 0.1 17
MMBZ5252 81C 24 5.2 33 600 0.087 0.1 18
MMBZ5253 81D 25 5 35 600 0.089 0.1 19
MMBZ5254 81E 27 4.6 41 600 0.090 0.1 21
MMBZ5255 81F 28 4.5 44 600 0.091 0.1 21
MMBZ5256 81G 30 4.2 49 600 0.091 0.1 23
MMBZ5257 81H 33 3.8 58 700 0.092 0.1 25
MMBZ5258 81J 36 3.4 70 700 0.093 0.1 27
MMBZ5259 81K 39 3.2 80 800 0.094 0.1 30
MMBZ5260 18F 43 3 93 900 0.095 0.1 33
MMBZ5261 81M 47 2.7 105 1000 0.095 0.1 36
MMBZ5262 81N 51 2.5 125 1100 0.096 0.1 39
MMBZ5263 81P 56 2.2 150 1300 0.096 0.1 43
MMBZ5264 81Q 60 2.1 170 1400 0.097 0.1 46
MMBZ5265 81R 62 2 185 1400 0.097 0.1 47
MMBZ5266 81S 68 1.8 230 1600 0.097 0.1 52
MMBZ5267 81T 75 1.7 270 1700 0.098 0.1 56
VISHAY
MMBZ5225 to MMBZ5267
Document Number 85772
Rev. 1.3, 08-Jul-04
Vishay Semiconductors
www.vishay.com
3
the Zener c urrent (IZT or IZK) is s uperimposed on IZT or IZK. Zener Impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units.
2) Valid provided case is kept at ambient temperature.
3) Measured at thermal equilibrium.
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Forward characteristics
Figure 2. Capacitance vs. Zener Voltage
18114
18118
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 4. Pulse Thermal Resistance vs. Pulse Duration
18672
°C
18116
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4Document Number 85772
Rev. 1.3, 08-Jul-04
VISHAY
MMBZ5225 to MMBZ5267
Vishay Semiconductors
Package Di mens ions in mm (Inches)
2.0 (0.079)
0.9 (0.035)
0.95 (0.037)0.95 (0.037)
0.52 (0.020)
12
3
17418
2.8 (.110)
3.1 (.122)
0.4 (.016)
0.95 (.037)0.95 (.037)
0.1 (.004) max.
1.20(.047)
1.43 (.056)
0.4 (.016)0.4 (.016)
0.098 (.005)
0.175 (.007)
0.95 (.037)
1.15 (.045)
2.35 (.092)
2.6 (.102)
ISO Method E
Mounting Pad Layout
VISHAY
MMBZ5225 to MMBZ5267
Document Number 85772
Rev. 1.3, 08-Jul-04
Vishay Semiconductors
www.vishay.com
5
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Prot ection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to impr ove te chnical design
and may do so without further notic e.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
