INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Benefits
Absolute Maximum Ratings
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.42
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
WtWeight ––– 6 (0.21) ––– g (oz)
ZθJC Transient Thermal Impedance Junction-to-Case (Fig.24)
7/27/04
E
G
n-channel
C
IRGP30B120KD-EP
Motor Control Co-Pack IGBT
PD- 95238
TO-247AD
N-channel
www.irf.com 1
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current (Fig.1) 60
IC @ TC = 100°C Continuous Collector Current (Fig.1) 30
ICM Pulsed Collector Current (Fig.3, Fig. CT.5) 120
ILM Clamped Inductive Load Current(Fig.4, Fig. CT.2) 120 A
IF @ TC = 100°C Diode Continuous Forward Current 30
IFM Diode Maximum Forward Current 120
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation (Fig.2) 300
PD @ TC = 100°C Maximum Power Dissipation (Fig.2) 120
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300, (0.063 in. (1.6mm) from case) °C
Mounting Torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m)
W
• Low VCE(on) Non Punch Through (NPT)
Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 µs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
• Lead-Free
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
VCES = 1200V
VCE(on) typ. = 2.28V
VGE = 15V, IC = 25A, 25°C
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Fig.
V
(BR)CES
Col le c t o r - to-Emit ter B reak do wn Vo lt age 1200 V
V
GE
= 0V,I
c
=250 µA
∆V
(BR)CES
/ ∆Tj
Temperatur e C oeff . of B reakdown Volt age +1.2 V/°C
V
GE
= 0V, I
c
= 1 mA ( 25 -125
o
C )
2.28 2.48
I
C
= 25A, V
GE
= 15V
5, 6
Collector-to-Emitter Saturation 2.46 2.66
I
C
= 30A, V
GE
= 15V
7, 9
V
CE(on)
Voltage 3.43 4.00 V
I
C
= 60A, V
GE
= 15V
10
2.74 3.10
I
C
= 25A, V
GE
= 15V, T
J
= 125° C
11
2.98 3.35
I
C
= 30A, V
GE
= 15V, T
J
= 125° C
V
GE(th)
Gate Threshold Voltage 4.0 5.0 6.0 V
V
CE
= V
GE
, I
C
= 250 µA
9,10,11,1
2
∆V
GE(th)
/ ∆Tj
Temperatur e C oeff . of Threshol d V olt ag e - 1.2 mV/
o
C
V
CE
= V
GE
, I
C
= 1 mA ( 25 -125
o
C )
g
fe
Forward Transconductance 14.8 16.9 19.0 S
V
CE
= 50V, I
C
= 25A, PW =80µs
250
V
GE
= 0V,V
CE
= 1200V
I
CES
Zero Gate Voltage Collector Current 325 675 µA
V
GE
= 0v, V
CE
= 1200V, T
J
=125°C
2000
V
GE
= 0v, V
CE
= 1200V, T
J
=150°C
1.76 2.06
I
C
= 25A
V
FM
Diode Forward Voltage Drop 1.86 2.17 V
I
C
= 30A
8
1.87 2.18
I
C
= 25A, T
J
= 125°C
2.01 2.40
I
C
= 30A, T
J
= 125°C
I
GES
Ga t e - to-Emit ter Leakage Curr ent ±100 nA
V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Fig.
Q
g
Total Gate ch ar ge (tur n- on) 169 254
I
C
= 25A
23
Q
ge
Gate - Emitter Charge (turn-on) 19 29 nC
V
CC
=600V
CT 1
Q
gc
Gate - Collector Charge (turn-on) 82 123
V
GE
= 15V
E
on
Tur n - O n Switchin g Loss 1066 1250
I
C
= 25A, V
CC
= 600V
CT 4
E
off
Tur n-O ff Swi tc hin g Loss 1493 1800 µJ
V
GE
= 15V, Rg = 5Ω, L=200µH
WF1
E
tot
Total Switching Loss 2559 3050 T
J
= 25
o
C, Energy losses include tail
and diode reverse recovery
WF2
E
on
Tur n - on Switc hing Loss 1660 1856
Ic =25A , V
CC
=600V
13, 15
E
off
Tur n-off Swit c hin g Loss 2118 2580 µJ
V
GE
= 15V, Rg = 5Ω, L=200µH
CT 4
E
tot
Total Switching Loss 3778 4436 T
J
= 125
o
C, Energy losses include tail
and diode reverse recovery
WF1 & 2
td(on)
Tur n - on delay time 50 65
Ic =25A , V
CC
=600V
14, 16
tr
Rise time 25 35 ns
V
GE
= 15V, Rg = 5Ω, L=200µH
CT 4
td(off)
Turn - off de lay time 210 230
T
J
= 125
o
C,
WF1
tf
Fall time 60 75
WF2
C
ies
I npu t C ap aci tance 2200
V
GE
= 0V
C
oes
Output Capacitance 210 pF
V
CC
= 30V
22
C
res
Reverse Transfer Capacitance 85
f = 1. 0 MHz
T
J
=150
o
C, Ic = 120A
4
RBSOA
Reverse bias safe operati ng area FULL SQUARE
V
CC
= 1000V, V
P
= 1200V
CT 2
Rg = 5Ω, V
GE
= +15V to 0 V
T
J
= 150
o
C
CT 3
SCSOA
Short Circuit Safe Operating Area 10 ---- ---- µs
V
CC
= 900V,V
P
= 1200V
WF4
Rg = 5Ω, V
GE
= +15V to 0 V
E
rec
Reverse recovery energy of the diode 1820 2400 µJ
T
J
= 125
o
C
17,18,19
trr
Diode Revers e recovery time 300 ns
V
CC
= 600V, Ic = 25A
20, 21
Irr
Peak Rev e rse Recovery Cur rent 34 38 A
V
GE
= 15V, Rg = 5Ω, L=200µH
CT 4 , WF3
Le
Internal Emitter Inductance 13 nH Measured 5 mm from the package.
IRGP30B120KD-EP
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Fig. 1 - Maximum DC Collector
C urrent v s. Cas e Temp eratu re
0
10
20
30
40
50
60
70
0 40 80 120 160
T
C
(°C)
I
C
( A )
Fig.2 - Power Dissipation vs. C ase
Temperature
0
40
80
120
160
200
240
280
320
0 40 80 120 160
T
C
(°C)
P
t o t
( W )
Fig. 3 - Forwar d SOA
T
C
=25°C; Tj<150°C
0.1
1
10
100
1000
1 10 100 1000 10000
V
CE
(V)
I
C
( A )
DC
10ms
1ms
100µs
10µs
2µs
PULSED
Fig. 4 - Reverse Bias SOA
Tj = 150°C, V
GE
= 15V
1
10
100
1000
1 10 100 1000 10000
V
CE
(V)
I
C
( A )
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Fig.5 - Typical IGBT Output
Characteristics
Tj= -40°C; tp=300 µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0123456
V
CE
(V)
I
C
( A )
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig. 6 - Typical IGBT Output
Characteristics
Tj= 25°C; t p=300µ s
0
5
10
15
20
25
30
35
40
45
50
55
60
0123456
VCE (V)
I
C
( A )
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.7 - Typical IGBT Output
Characteristics
Tj= 125°C; t p=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
0123456
V
CE
(V)
I C ( A )
V
GE
= 18V
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
Fig.8 - Typ ical Diode For w ard
Characteristic
tp=300µs
0
5
10
15
20
25
30
35
40
45
50
55
60
01234
V
F
(V)
I
F
( A )
- 40°C
25°C
125°C
IRGP30B120KD-EP
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Fig.9 - Typical V
CE
vs V
GE
Tj= - 40°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20
V
GE
(V)
V
C E
( V )
I
CE
=10A
I
CE
=25A
I
CE
=50A
Fig.12 - Typ. T ransfer Ch aracteristics
V
CE
=20V; tp=20µs
0
25
50
75
100
125
150
175
200
225
250
0 4 8 121620
VGE (V)
I
C
( A )
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Fig.10 - Typical V
CE
vs V
GE
Tj= 25°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20
VGE (V )
V
C E
( V )
ICE=10A
ICE=25A
ICE=50A
Fig.11 - Typical VCE vs VGE
Tj= 125°C
0
2
4
6
8
10
12
14
16
18
20
6 8 10 12 14 16 18 20
VGE (V)
V
C E
( V )
ICE =10A
ICE =25A
I
CE
=50A
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Fig.16 - Typical Switching Time vs Rg
Tj=125°C; L=200µH; V
CE
=600V;
I
CE
=25A; V
GE
=15V
10
100
1000
0 5 10 15 20 25 30 35 40 45 50 5
5
Rg (ohms)
t ( n S )
tdon
tdoff
tr
tf
Fig.13 - Typical Energy Loss vs Ic
Tj= 125°C; L=200µH; V
CE
=600V;
Rg=22
Ω
; V
GE
=15V
0
1000
2000
3000
4000
5000
6000
7000
8000
0 10203040506
0
I
C
(A)
E n e r g y ( µ J )
Eon
Eoff
Fig. 15 - Typical Energy Loss vs Rg
Tj=125°C; L=200µH; V
CE
=600V ;
I
CE
=25A; V
GE
=15V
1500
1700
1900
2100
2300
2500
2700
2900
3100
3300
3500
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
E n e r g y ( u J )
Eon
Eoff
Fig .14 - Typ ical Switching Time vs Ic
Tj=125°C; L=200µH; VCE =600V;
Rg=22
Ω
;V GE=15V
10
100
1000
0 102030405060
IC (A)
t ( n S )
tdon
tdoff
tf
tr
IRGP30B120KD-EP
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Fig. 20 - Typical Diode QRR
VCC=600V; VGE=15V; Tj= 125°C
2500
3000
3500
4000
4500
5000
5500
6000
6500
7000
0 500 1000 1500
dIF / dt (A/µ s)
Q
R R
( n C )
51
Ω
22
Ω
10
Ω
5
Ω
50A
40A
30A
25A
20A
Fig.18 - Typica l Dio de IRR vs Rg
Tj=125°C; IF=25A
0
5
10
15
20
25
30
35
40
45
0 5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
I
R R
( A )
Fig.17 - Typical Diode IRR vs IF
Tj=125°C
0
5
10
15
20
25
30
35
40
45
0 102030405060
IF (A)
I
R R
( A )
Rg=5
Ω
Rg=10
Ω
Rg=22
Ω
Rg=51
Ω
Fi g.19 - Typical D iode I
RR
vs dI
F
/dt
V
CC
= 600V; V
GE
=15V
I
F
=25A; Tj =125°C
0
5
10
15
20
25
30
35
40
45
0 500 1000 1500
dI
F
/ dt (A/µs)
I
R R
( A )
Rg=22
Ω
Rg=51
Ω
Rg=10
Ω
Rg=5
Ω
IRGP30B120KD-EP
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Fig.21 - Typ. Diode E
rec
vs. I
F
Tj=125°C
800
1000
1200
1400
1600
1800
2000
2200
2400
0 102030405060
I
F
(A)
E n e r g y ( u J )
5
Ω
10
Ω
22
Ω
51
Ω
Fig.23 - Typ. Gate Charge vs. VGE
IC=25A; L=600µH
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200
QG, Total Gate Charge (nC)
V G E ( V )
600V
800V
Fig.22 - Typical Capacitance vs VCE
VGE=0V; f= 1MHz
10
100
1000
10000
0 20406080100
VCE (V)
C a p a c I t a n c e ( p F )
Cies
Coes
C res
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Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case
0.001
0.01
0.1
1
10
0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.0000
0
t
1
, Rectangular Pulse Duration (sec)
θ
SINGLE
PULSE
0.05
0.02
D =0.5
0.01
0.2
0.1
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P
DM
t
1
t
2
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Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit
Fig. CT.3 - S.C. SOA Circuit
L
Rg
80 V DUT
1000V
D
C
Driver
DUT
900V
Fig. CT.4 - Switching Loss Circuit
1K
VCC
DUT
0
L
L
Rg
VCC
diode cla mp /
DUT
DUT /
DRIVER
- 5V
Rg
VCC
DUT
R =
V
CC
I
CM
Fig. CT.5 - Resistive Load Circuit
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Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4
Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125°C using Fig. CT.4
Fig. WF.4 - Typ. S.C. Waveform
@ TC=150°C using Fig. CT.3
Fig. WF.3 - Typ. Diode Recovery Waveform
@ Tj=125°C using Fig. CT.4
0
200
400
600
800
1000
1200
-10 0 10 20 30
t i me (µs)
V
C E
( V )
-50
0
50
100
150
200
250
I
C E
( A )
-1200
-1000
-800
-600
-400
-200
0
-0.5 0.0 0.5 1.0
t I me (µS)
V
C E
( V )
-30
-20
-10
0
10
20
30
I
C E
( A )
Peak
IRR
QRR
tRR
10%
Peak
IRR
-100
0
100
200
300
400
500
600
700
800
900
4.0 4.1 4.2 4.3 4.4 4.5
t I me (µs)
V
C E
( V )
-5
0
5
10
15
20
25
30
35
40
45
I
C E
( A )
TEST CURRENT
90% test curre nt
10% test curre nt
Eon Loss
5% VCE
t r
-100
0
100
200
300
400
500
600
700
800
-0.5 0.0 0.5 1.0 1.5 2.0 2.5
t I me (µs)
V
C E
( V )
-5
0
5
10
15
20
25
30
35
40
I
C E
( A )
90% ICE
t f
5% VCE
5% ICE
Eoff Loss
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TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
AS S EMBL Y YEAR 0 = 2000
ASSEMBLED ON WW 35, 2000
IN TH E ASSEMB LY LI NE "H"
EXAMPLE: THIS IS AN IRGP30B120KD-E
LOT CODE 5657
WIT H AS SEMBLY PAR T NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
035H
56 57
WEEK 35
LINE H
LOT CODE
Note: "P" in assembly line position
indicates "Lead-F ree"
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
