APTC60DHM24T3G
APTC60DHM24T3G – Rev 1 August, 2009
www.microsemi.com 1-7
All multiple inputs and outputs must be shorted together
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
32
4
16
Q4
CR3
3
13
R1
31
7
14
8
19
3029
22
Q1
18
CR2
23
15
16
15
182023 22
13
11 12
14
87
29
30
28 27 26
3
32
31
10
19
2
25
4
Example: 13/14 ; 29/30 ; 22/23…
Symbol Parameter Max ratings Unit
VDSS Drain - Source Breakdown Voltage 600 V
Tc = 25°C 95
ID Continuous Drain Current Tc = 80°C 70
IDM Pulsed Drain current 260
A
VGS Gate - Source Voltage ±20 V
RDSon Drain - Source ON Resistance 24 mΩ
PD Maximum Power Dissipation Tc = 25°C 462 W
IAR Avalanche current (repetitive and non repetitive) 15 A
EAR Repetitive Avalanche Energy 3
EAS Single Pulse Avalanche Energy 1900 mJ
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Features
•
- Ultra low RDSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal
for easy PCB mounting
• Low profile
• RoHS compliant
Asymmetrical Bridge
Super Junction MOSFET
Power Module
VDSS = 600V
RDSon = 24mΩ max @ Tj = 25°C
ID = 95A @ Tc = 25°C
APTC60DHM24T3G
APTC60DHM24T3G – Rev 1 August, 2009
www.microsemi.com 2-7
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VGS = 0V,VDS = 600V Tj = 25°C 350
IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 600 µA
RDS(on) Drain – Source on Resistance VGS = 10V, ID = 47.5A 24 mΩ
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 5mA 2.1 3 3.9 V
IGSS Gate – Source Leakage Current VGS = ±20 V, VDS = 0V 200 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Ciss Input Capacitance 14.4
Coss Output Capacitance
VGS = 0V ; VDS = 25V
f = 1MHz 17 nF
Qg Total gate Charge 300
Qgs Gate – Source Charge 68
Qgd Gate – Drain Charge
VGS = 10V
VBus = 300V
ID = 95A 102
nC
Td(on) Turn-on Delay Time 21
Tr Rise Time 30
Td(off) Turn-off Delay Time 100
Tf Fall Time
Inductive Switching (125°C)
VGS = 10V
VBus = 400V
ID = 95A
RG = 2.5Ω 45
ns
Eon Turn-on Switching Energy 1350
Eoff Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω 1040
µJ
Eon Turn-on Switching Energy 2200
Eoff Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 10V ; VBus = 400V
ID = 95A ; RG = 2.5Ω 1270 µJ
Diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 600 V
Tj = 25°C 25
IRM Maximum Reverse Leakage Current VR=600V Tj = 125°C 500 µA
IF DC Forward Current Tc = 80°C 60 A
IF = 60A 1.7 2.3
IF = 120A 2
VF Diode Forward Voltage
IF = 60A Tj = 125°C 1.4
V
Tj = 25°C 70
trr Reverse Recovery Time Tj = 125°C 140 ns
Tj = 25°C 100
Qrr Reverse Recovery Charge
IF = 60A
VR = 400V
di/dt =200A/µs
Tj = 125°C 690 nC
APTC60DHM24T3G
APTC60DHM24T3G – Rev 1 August, 2009
www.microsemi.com 3-7
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
CoolMOS 0.27
RthJC Junction to Case Thermal Resistance diode 0.85
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 4000 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
Torque Mounting torque To heatsink M4 2.5 4.7 N.m
Wt Package Weight 110 g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R25 Resistance @ 25°C 50 kΩ
∆R25/R25 5 %
B25/85 T
25 = 298.15 K 3952 K
∆B/B TC=100°C 4
%
⎥
⎥
⎦
⎤
⎢
⎢
⎣
⎡
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛−
=
TT
B
R
RT11
exp
25
85/25
25
SP3 Package outline (dimensions in mm)
17
12
28
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
APTC60DHM24T3G
APTC60DHM24T3G – Rev 1 August, 2009
www.microsemi.com 4-7
Typical CoolMOS Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maxi mum Effective Transient Thermal Im ped an ce, Ju ncti o n to Case vs Pul se Durati on
4V
4.5V
5V
5.5V
6V
6.5V
0
80
160
240
320
400
480
560
640
720
0 5 10 15 20 25
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
V
GS
=15&10V
Low Vo ltage Output Characteristics Transfert Characteristics
T
J
=25°C
T
J
=125°C
0
40
80
120
160
200
240
280
01234567
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
R
DS
(on) vs Drain Current
V
GS
=10V
V
GS
=20V
0.9
0.95
1
1.05
1.1
1.15
1.2
1.25
1.3
0 40 80 120 160 200 240 280
I
D
, Drain Curren t (A)
R
DS
(on) Drain to Source ON Resistance
Normalized to
V
GS
=10V @ 95A
0
20
40
60
80
100
25 50 75 100 125 150
T
C
, Case Temperature (°C)
I
D
, DC Drain Current (A)
DC Drain Current vs Case Temperature
APTC60DHM24T3G
APTC60DHM24T3G – Rev 1 August, 2009
www.microsemi.com 5-7
0.8
0.9
1.0
1.1
1.2
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltag e vs Temperature
BVDSS, Drain to Source Breakdown
Voltage (Norm alized)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
RDS(on), Drain to Source ON resistance
(Normalized)
VGS=10V
ID= 95A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
25 50 75 100 125 150
TC, Case Temperature (°C)
VGS(TH), Threshold Voltage
(Normalized)
Maximu m Safe Operating Area
10 ms
1 ms
100 µs
1
10
100
1000
1 10 100 1000
VDS, Drain to Source Voltage (V)
ID, Drain Current (A)
limited b
y
R
DS
on
Single pulse
TJ=150°C
TC=25°C
Ciss
Crss
Coss
10
100
1000
10000
100000
1000000
0 1020304050
VDS, Drain to S o u rce Vo ltag e (V)
C, Capacitance (pF)
Capacitance vs Drain to Sou rce V ol tag e
VDS=120V
VDS=300V
VDS=480V
0
2
4
6
8
10
12
0 40 80 120 160 200 240 280 320
Gate Charge (nC)
VGS, Gate to Source Vol tag e (V )
Gate Charge vs Gate to Source Voltage
ID=95A
TJ=25°C
APTC60DHM24T3G
APTC60DHM24T3G – Rev 1 August, 2009
www.microsemi.com 6-7
T
J
=25°C
T
J
=150°C
1
10
100
1000
0.3 0.5 0.7 0.9 1.1 1.3 1.5
V
SD
, Source to Drain V o ltag e (V)
I
DR
, Reverse Drain Current (A)
Source to Drain Diode Forward Voltage
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
0 20 40 60 80 100 120 140 160
I
D
, Drain Current (A)
t
d(on)
and t
d(off)
(ns)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Rise and Fall times vs Current
t
r
t
f
0
10
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160
I
D
, Drain Curren t (A)
t
r
and t
f
(ns)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH
Switchi n g E nerg y vs Current
E
on
E
off
0
1
2
3
4
0 20 40 60 80 100 120 140 160
I
D
, Drain Current (A)
Switchi n g Energy (mJ)
V
DS
=400V
R
G
=2.5Ω
T
J
=125°C
L=100µH E
on
E
off
0
1
2
3
4
5
0 5 10 15 20 25
Gate Resistance (Ohms)
Switchi ng Energy (mJ)
Switching Energy vs Gate Resistance
V
DS
=400V
I
D
=95A
T
J
=125°C
L=100µH
hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90
I
D
, Drain Curren t (A)
Frequency (kHz)
Operating Frequency vs Drain Current
V
DS
=400V
D=50%
R
G
=2.5Ω
T
J
=125°C
T
C
=75°C
APTC60DHM24T3G
APTC60DHM24T3G – Rev 1 August, 2009
www.microsemi.com 7-7
Typical diode Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.00001 0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Maximum Effective Transient Thermal Im pedance, Junction to Case vs Pulse Duration
TJ=25°C
TJ=125°C
0
40
80
120
160
200
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VF, Anode to Cathode Voltage (V)
IF, Forward Current (A)
Forward Current vs Forward Voltage
IRRM vs. Current Rate of Charge
30 A
60 A
120 A
0
5
10
15
20
25
30
35
40
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
IRRM, Reverse Recovery Current (A)
TJ=125°C
VR=400V
Trr vs. Current Rate of Charge
30 A
60 A
120 A
50
75
100
125
150
175
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
trr, Reverse Recovery Time (ns)
TJ=125°C
VR=400V
QRR vs. Current Rate Ch arge
30 A
60 A
120 A
0.0
0.5
1.0
1.5
2.0
0 200 400 600 800 1000 1200
-diF/dt (A/µs)
QRR, Reverse Recovery Charge (µC)
TJ=125°C
VR=400V
Capacitance vs. Reverse Voltage
0
100
200
300
400
500
1 10 100 1000
VR, Reverse Voltage (V)
C, Capacitance (pF)
0
20
40
60
80
100
25 50 75 100 125 150 175
Case Temperature (°C)
IF (A)
DC Forward Curr ent vs. Case Temp.
Duty Cycle = 0.5
TJ=175°C
“COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon
Technologies AG”.
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
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