STD4N25
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
■TYPICAL RDS(on) = 0.7 Ω
■AVALANCHE RUGGED TECHNOLOGY
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHE DATA AT 100oC
■APPLICATION ORIENTED
CHARACTERIZATION
■THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■HIGH SPEED SWITCHING
■UNINTERRUPTIBLE POWER SUPPLY (UPS)
■MOTOR CONTROL, AUDIO AMPLIFIERS
■INDUSTRIALACTUATORS
■DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
■PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
STD4N25 250 V < 1.1 Ω4A
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 250 V
VDGR Drain- gate Voltage (RGS =20kΩ) 250 V
VGS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C4A
I
D
Drain Current (continuous) at Tc=100o
C2.5A
I
DM(•) Drain Current (pulsed) 16 A
Ptot Total Dissipation at Tc=25o
C50W
Derating Factor 0.4 W/oC
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
(•) Pulsewidth limited by safe operating area
1
3
2
IPAK
TO-251
(Suffix ”-1”)
13
DPAK
TO-252
(Suffix ”T4”)
1/10
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.5
100
1.5
275
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 4A
E
AS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD=50V) 20 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tjmax, δ <1%) 5mJ
I
AR Avalanche Current, Repetitive or Not-Repetitive
(Tc= 100 oC, pulse width limited by Tjmax, δ <1%) 2.5 A
ELECTRICAL CHARACTERISTICS (Tcase =25o
C unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µAV
GS = 0 250 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS = Max Rating x 0.8 Tc=125o
C10
100 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =±
20 V ±100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID=250µA234V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D=2A 0.7 1.1 Ω
I
D(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10V 4A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=2A 1 2.5 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS =0 500
85
15
700
120
30
pF
pF
pF
STD4N25
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD =125V I
D=2A
R
G=50
ΩV
GS =10V
(see test circuit, figure 3)
30
60 45
90 ns
ns
(di/dt)on Turn-on Current Slope VDD =200V I
D=4A
R
G=50
ΩV
GS =10V
(see test circuit, figure 5)
220 A/µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 200 V ID=4A V
GS =10V 20
6
6
30 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =200V I
D=4A
R
G=50
ΩV
GS =10V
(see test circuit, figure 5)
35
20
60
50
30
90
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
4
16 A
A
VSD (∗) Forward On Voltage ISD =4A V
GS =0 1.5 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =4A di/dt=100A/µs
V
DD = 100 V Tj=150o
C
(see test circuit, figure 5)
160
0.8
10
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STD4N25
3/10
Derating Curve
Transfer Characteristics
Static Drain-source On Resistance
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
STD4N25
4/10
Capacitance Variations Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature Turn-on Current Slope
Cross-over TimeTurn-off Drain-source Voltage Slope
STD4N25
5/10
Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms
Switching Safe Operating Area Accidental Overload Area
Source-drain Diode Forward Characteristics
STD4N25
6/10
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 3: Switching Times Test Circuits For
Resistive Load
STD4N25
7/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
D
A
C2
C
L
A3
L2
L1
13
H
==
B3
B
B6
B2
E
G
A1
==
==
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STD4N25
8/10
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039
D
A
C2
C
L
A3
L2
L1
13
H
==
B3
B
B6
B2
E
G
A1
==
==
B5
2
TO-251 (IPAK) MECHANICAL DATA
0068771-E
STD4N25
9/10
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such informationnor for any infringement of patents or other rights of third parties which may results fromits use. No
licenseis granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in lifesupport devices or systems without express
writtenapproval ofSGS-THOMSONMicroelectonics.
1996 SGS-THOMSON Microelectronics - Printed in Italy- All Rights Reserved
SGS-THOMSONMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada -China - France- Germany - HongKong- Italy - Japan- Korea-Malaysia - Malta- Morocco - TheNetherlands -
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.
STD4N25
10/10
