MOTOROLA = SEMICONDUCTOR yyy = TECHNICAL DATA MRF314 MRF314A The RF Line 30 W -30-~200 MHz RF POWER NPN SILICON RF POWER TRANSISTORS TRANSISTORS . . . : : . IP ... designed primarily for wideband large-signal driver and output NPN SILICON amplifier stages in the 30 200 MHz frequency range. Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 d8 a- @ 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR . toe . - ar Ss PINY EMOTTER @ Gold Metallization System for High Reliability Applications . 7 BASE : 3 EMITTER 34 j # COLLECTOR ! c BT si j To mm - | MILUMETERS | Gana OM WN | MAK AMI C ey a ga) 990 | : cosa) or) eae! Dl yar) 596 7 bate | 02% Bloat) ie6 7 woes | 010s MRF314 a! va Sash 7 vie | a nee (2) GT) O15 | bod | 0006 ok | oa 7 1028 7 6395 | aa05 Mi ow 7 0 | mm | 80 a | pa) 330) om + on39 al ea) gar) o7as | 0255 MAXIMUM RATINGS S| war. 208? orm | o8w CASE 211-07 Uo) 1829 | 1654 | 07RD; 9730 Rating Symbol Value Unit Collector-Emitter Voltage VcEO 35 Vde tT Collector-Base Voltage VcBo 65 Vde 1 Emitter-Base Voltage VEBO 40 Vde 4 4 i t ~ Collector Current Continuous le 34 Adc c i | Total Device Dissipation @ Tc = 25C (1) Pp 82 Watts . e Derate above 25C 0.47 wiec AN2UNC 28 Storage Temperature Range Tstg -65 ta +150 % WRENCH FLAT THERMAL CHARACTERISTICS 1. Characteristic Symbol Max Unit SNe 8 j Thermat Resistance, Junction to Case Rasc 2.13 ciw meee | ; 4 EMITTER {1} These devices are designed for RF operation. The total device dissipation 4 COLLET UR rating applies anly when the devices are operated as RF amplifiers. | RALLIMETERS OM) MIN | Max | om a) gan oe | ~ a! 63) B38! Se tog) aor? , OD, Sab BSF 1 en : hi er Kua? MRF3144 rs ae P 1 nr (8) 401 88 T 2u itt CASE 145A-09 ul 2a) 335 MOTOROLA RF DEVICE DATA 2-533MRF314, MRF314A ELECTRICAL CHARACTERISTICS (Te + 25C uniess otherwise noted) Characteristics Symbol Min Typ Max | Unit | OFF CHARACTERISTICS Coilector-Emitter Breakdown Voltage ViBRICEO 35 - - Vde (Ic = 30 mAdc, Ig = Q) Collector-Emitter Breakdown Voltage ViBRICES 65 - - Vde (I = 30 mAdc, Vge = 0) Collector-Base Breakdown Voltage ViIBRICBO 65 : - Vde {Ic = 30 mAdc, Ie = 0} Emitter-Base Breakdown Voltage V(BRIEBO 4.0 - ~ Vde (Ve - 3.0 mAdc, Ic = 0) Collector Cutoff Current 'cpo - 3.0 mAdc (VopB = 30 Vde, Ig - 0) ON CHARACTERISTICS OC Current Gain hee 20 | ~ | 80 > | (te - 1.5 Adc, VceE = 9.0 Vde} OYNAMIC CHARACTERISTICS Output Capacitance Cob - 30 40 pF | (Vcg ~ 30 Vdc, Ie = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain Gpe 10 13.6 db (Veg - 28 Vde, Poy, - 30W, f - 180 MHz) Collector Elficiency " 50 = % (Voc + 28 Vde, Poy, - 30W,f 150 MHz) Load Mismatch - (Vcc 28 Vdc, Pour - 30 W, f = 150 MHz, No Degration in Power Output VSWR 30.1 all phase angles FIGURE 1 150 MHz TEST CIRCUIT O OC + 28 Vde ci RE Input >4 C1, C7 - 18 pF, 100 mii ATC R1,R2- 102,10W C2 - 68 pF, 100 mil ATC C3, CG Johanson 4 JMC 5501 C4 270pF, 100 mH ATC CS ~ 240 pF, 100 mil ATC RFC1 18 4H Molded Coil RFC2 - 2 Turns, 2.5 #20 Wire, ID = 0.2" RFC3 Ferroxcube VK200 19/48 C8, C9 100 pF Underwood Z1- Microstrip 0.168" W x 1.67 L C10 ~ 1.0mMF Tantalum 22>) Microstrip 0.168" Wx 4.277 L1 2 Turns, 2.5" #20 Wire, 10 = 0.275" Board - Glass Teflan eg ~ 2.55 Cee as MOTOROLA AF DEVICE DATA 2-534MRF314, MRF314A TYPICAL PERFORMANCE CURVES FIGURE 2 OUTPUT POWER versus INPUT POWER 50 MHz FOMHe = =100 MHz 150 MHz 200 MHz Poyt, OUTPUT POWER (WATTS) 0.03 ot 10 Py, INPUT POWER (WATTS) FIGURE 3 OUTPUT POWER versus INPUT POWER 30 MHz 0 MHz 70 Miz 100 MHz 150 MHz 200 MHz Pout. OUTPUT POWER (WATTS) Voce = 138 004 01 10 60 P,,, INPUT POWER (WATTS) FIGURE 4 POWER GAIN versus FREQUENCY FIGURE 5 EFFICIENCY (n%) versus FREQUENCY z 24 & ef 2 = = e 2 = a > = & 1B = = 8 3 = z 16 s = 14 Pout = 30W 3 Ver = 28 Vor = 28V we 12 . Poui = 30W a 10 20 406 80s 100-120, 140 160 180200 2 0640 bssisiODs2ssH8Gs GOs 200 220 , FREQUENCY (MH2) f, FREQUENCY (MHz) MOTOROLA RF DEVICE DATA 2-535MRF314, MRF314A FIGURE 6 SERIES EQUIVALENT INPUT/OUTPUT IMPEDANCE ELECTION COEFFICIENT , ' 'N ORGREE 100 70 s 50+ Lal 150 5.0 50 70 {4 38) , { 200 MHz NOuC Tye 30 Zin Re. 4 15.0 x Mm ., Ww . w 7 rT / 0 > ~% z 410.0 ~ oF _ 4 i oA f Zin Zou* - a_] y wv Miz OHMS OHMS 200 MHz Le] ; i . 30 24-134 | 18.0 -|12.1 150 bt Ty PS Ss | 50 1.6 -j2.6 | 16.5 -j12.1 i00 $415.0 76 0.8 -j0.8 | 15.0 -j11.8 \ Zoi z 4 PAYS 100 | 07 -j0.5 | 129-108 10. AAL SK hk 150 0.9+j0.9 | 11.9 -j9.4 50 Sp 20.07 ny ~~ | 200 1.34jt.2 | 11.5 -j8.1 30 ve , py f zB ! wA Zo = Conjugate of the optimum ioad impedance into which the device output operates at a given output power, voltage and frequency. FIGURE 7 TEST FIXTURE MOTOROLA RF DEVICE DATA 2-536