PD-93857D IRHF57230SE JANSR2N7498T2 200V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) REF: MIL-PRF-19500/706 R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHF57230SE 100 kRads(Si) RDS(on) ID QPL Part Number 0.24 6.7A JANSR2N7498T2 TO-39 Description Features IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm 2 )). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic Package Light Weight ESD Rating: Class 1A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol ID1 @ VGS = 12V, TC = 25C Pre-Irradiation Value Parameter Continuous Drain Current 6.7 ID2 @ VGS = 12V, TC = 100C Continuous Drain Current 4.3 Units A IDM @ TC = 25C Pulsed Drain Current PD @ TC = 25C Maximum Power Dissipation 25 W Linear Derating Factor 0.2 W/C VGS Gate-to-Source Voltage 20 V EAS Single Pulse Avalanche Energy 149 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt 6.7 2.5 4.2 mJ A IAR EAR dv/dt TJ TSTG Operating Junction and Storage Temperature Range Lead Temperature Weight 26.8 -55 to + 150 mJ V/ns C 300 (0.063 in. /1.6 mm from case for 10s) 0.98 (Typical) g For Footnotes, refer to the page 2. 1 International Rectifier HiRel Products, Inc. 2018-10-26 IRHF57230SE JANSR2N7498T2 Pre-Irradiation Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Symbol BVDSS BVDSS/TJ RDS(on) VGS(th) Gfs IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time QG QGS QGD td(on) tr td(off) tf Min. Typ. Max. Units 200 --- --- 2.5 4.2 --- --- --- --- --- --- --- --- --- --- --- --- 0.26 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.24 4.5 --- 10 25 100 -100 47 12 16 25 100 35 40 V V/C V S A nA nC ns Ls +LD Total Inductance --- 7.0 --- nH Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1014 182 8.8 --- --- --- pF Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID2 = 4.3A VDS = VGS, ID = 1.0mA VDS = 15V, ID2 = 4.3A VDS = 160V, VGS = 0V VDS = 160V,VGS = 0V,TJ =125C VGS = 20V VGS = -20V ID1 = 6.7A VDS = 100V VGS = 12V VDD = 100V ID1 = 6.7A RG = 7.5 VGS = 12V Measured from Drain lead (6mm / 0.25 in from package) to Source lead (6mm/ 0.25 in from package) with Source wire internally bonded from Source pin to Drain pin VGS = 0V VDS = 25V = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Symbol Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) --- --- 6.7 ISM Pulsed Source Current (Body Diode) --- --- 26.8 VSD Diode Forward Voltage --- --- 1.5 V TJ = 25C,IS = 6.7A, VGS = 0V trr Reverse Recovery Time --- --- 274 ns TJ = 25C, IF = 6.7A, VDD 25V Qrr Reverse Recovery Charge --- --- 2.2 C di/dt = 100A/s ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A Thermal Resistance Symbol Min. Typ. Max. RJC Junction-to-Case Parameter --- --- 5.0 RJA Junction-to-Ambient (Typical Socket Mount) --- --- 175 Units C/W Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25C, L = 6.6mH, Peak IL = 6.7A, VGS = 12V ISD 6.7A, di/dt 219A/s, VDD 200V, TJ 150C Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, Method 1019, condition A. Total Dose Irradiation with VDS Bias. 160volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, Method 1019, condition A. 2 International Rectifier HiRel Products, Inc. 2018-10-26 IRHF57230SE JANSR2N7498T2 Radiation Characteristics Pre-Irradiation IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation Symbol 100 kRads (Si) Parameter Min. Max. Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage 200 --- V VGS = 0V, ID = 1.0mA VGS(th) Gate Threshold Voltage 2.0 4.5 V VDS = VGS, ID = 1.0mA IGSS Gate-to-Source Leakage Forward --- 100 nA VGS = 20V IGSS Gate-to-Source Leakage Reverse --- -100 nA VGS = -20V IDSS Zero Gate Voltage Drain Current --- 10 A VDS = 160V, VGS = 0V RDS(on) Static Drain-to-Source On-State Resistance (TO-3) --- 0.222 VGS = 12V, ID2 = 4.3A RDS(on) Static Drain-to-Source On-State Resistance (TO-39) --- 0.24 VGS = 12V, ID2 = 4.3A VSD Diode Forward Voltage --- 1.5 V VGS = 0V, IS = 6.7A IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion VDS (V) LET Energy Range (MeV/(mg/cm2)) (MeV) (m) @ VGS = 0V @ VGS = -5V @ VGS = -10V @ VGS = -15V @ VGS = -20V Br 36.7 309 39.5 200 200 200 200 200 I 59.8 341 32.5 200 200 200 185 120 Au 82.3 350 28.4 200 200 150 50 25 250 VDS 200 Br 150 I 100 Au 50 0 0 -5 -10 -15 -20 VGS Fig a. Typical Single Event Effect, Safe Operating Area For Footnotes, refer to the page 2. 3 International Rectifier HiRel Products, Inc. 2018-10-26 IRHF57230SE JANSR2N7498T2 Pre-Irradiation 10 VGS TOP 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 1 0.1 5.0V 10 5.0V 1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 20s PULSE WIDTH TJ = 150 C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics I D , Drain-to-Source Current (A) 100 TJ = 150 C 10 TJ = 25 C 1 0.1 V DS= 50V 20s PULSE WIDTH 4 6 8 10 12 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 2000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1600 C, Capacitance (pF) Fig 4. Normalized On-Resistance Vs. Temperature Ciss 1200 Coss 800 Crss 400 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 4 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage International Rectifier HiRel Products, Inc. 2018-10-26 IRHF57230SE JANSR2N7498T2 Pre-Irradiation 100 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 10 TJ = 150 C 1 TJ = 25 C V GS = 0 V 0.1 0.2 0.8 1.4 2.0 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 100s 1ms 1 10ms 0.1 Tc = 25C Tj = 150C Single Pulse 0.01 1 2.6 VSD ,Source-to-Drain Voltage (V) DC 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 400 EAS , Single Pulse Avalanche Energy (mJ) 7.0 I D , Drain Current (A) 6.0 5.0 4.0 3.0 2.0 1.0 TOP 300 BOTTOM ID 3.0A 4.2A 6.7A 200 100 0 0.0 25 50 75 100 125 25 150 TC , Case Temperature ( C) 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Maximum Avalanche Energy Vs. Drain Current Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.1 0.01 0.00001 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 International Rectifier HiRel Products, Inc. 2018-10-26 IRHF57230SE JANSR2N7498T2 Pre-Irradiation Fig 12a. Unclamped Inductive Test Circuit Fig 13a. Gate Charge Waveform Fig 14a. Switching Time Test Circuit 6 Fig 12b. Unclamped Inductive Waveforms Fig 13b. Gate Charge Test Circuit Fig 14b. Switching Time Waveforms International Rectifier HiRel Products, Inc. 2018-10-26 IRHF57230SE JANSR2N7498T2 Pre-Irradiation Case Outline and Dimensions - TO-205AF (TO-39) www.infineon.com/irhirel Infineon Technologies Service Center: USA Tel: +1 (866) 951-9519 and International Tel: +49 89 234 65555 Leominster, Massachusetts 01453, USA Tel: +1 (978) 534-5776 San Jose, California 95134, USA Tel: +1 (408) 434-5000 Data and specifications subject to change without notice. 7 International Rectifier HiRel Products, Inc. 2018-10-26 IRHF57230SE JANSR2N7498T2 Pre-Irradiation IMPORTANT NOTICE The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The data contained herein is a characterization of the component based on internal standards and is intended to demonstrate and provide guidance for typical part performance. 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