2015-12-23 1
2015-1 2-23
Silicon Differential Photodiode
Version 1.3
BPX 48
Ordering Information
Features:
Especially suitable for applications from 400 nm to 1100 nm
High photosensitivity
DIL plastic package with high packing density
Double diode with extremely high homogeneousness
Applications
Industrial electronics
For control and drive circuits
Edge control
Follow-up control
Path and angle scanning
Type: Photocurrent Ordering Code
IPA]
Ev = 1000 lx, Std. Light A, VR = 5
V, T = 2856 K
BPX 48 24 (≥ 15) Q62702P0017S001
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Version 1.3 BPX 48
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C, per single diode / für jede Einzeldiode)
Parameter Symbol Values Unit
Operating and storage temperature range Top; Tstg -40 ... 80 °C
Reverse voltage VR10 V
Total Power dissipation Ptot 50 mW
Electrostatic discharge
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD 2000 V
Parameter Symbol Values Unit
Photocurrent
(Ev = 1000 lx, Std. Light A, VR = 5 V, T = 2856 K)
(typ (min)) IP24 (≥ 15) µA
Wavelength of max. sensitivity (typ) λS max 900 nm
Spectral range of sensitivity (typ) λ10% (typ) 400
... 1150
nm
Radiant sensitive area (typ) A 1.54 mm2
Dimensions of radiant sensitive area (typ) L x W 0.7 x 2.2 mm x
mm
Half angle (typ) ϕ ± 60 °
Dark current
(VR = 10 V)
(typ (max)) IR10 (≤ 100) nA
Spectral sensitivity of the chip
= 850 nm)
(typ) Sλ typ 0.55 A / W
Max. deviation from average for each single diode (typ) ∆S ±5 %
Quantum yield of the chip
= 850nm)
(typ) η 0.80 Electro
ns
/Photon
Open-circuit voltage
(Ev = 1000 lx, Std. Light A)
(typ (min)) VO330 (≥ 280) mV
Short-circuit current
(Ev = 1000 lx, Std. Light A)
(typ) ISC 24 µA
Rise and fall time
(VR = 5 V, RL = 1 kΩ, λ = 850 nm)
(typ) tr, tf0.5 µs
Forward voltage
(IF = 100 mA, E = 0)
(typ) VF1.3 V
Capacitance
(VR = 0 V, f = 1 MHz, E = 0)
(typ) C025 pF
Temperature coefficient of VO(typ) TCV-2.6 mV / K
Version 1.3 BPX 48
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Temperature coefficient of ISC
(Std. Light A)
(typ) TCI0.18 % / K
Noise equivalent power
(VR = 10 V, λ = 850 nm)
(typ) NEP 0.103 pW /
Hz½
Detection limit
(VR = 10 V, λ = 950 nm)
(typ) D*1.2e12 cm x
Hz½ / W
Relative Spectral Sensitivity 1) page 7
Srel = f(λ)
Photocurrent / Open-Circuit Voltage 1) page 7
IP (VR = 5V) / VO = f(EV)
Parameter Symbol Values Unit
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Version 1.3 BPX 48
Power Consumption
Ptot = f(TA)
Dark Current 1) page 7
IR = f(VR), E = 0
Capacitance 1) page 7
C = f(VR), f = 1 MHz, E = 0
Dark Current 1) page 7
IR = f(TA), VR = 10 V, E = 0
Version 1.3 BPX 48
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Directional Characteristics 1) page 7
Srel = f(ϕ)
Package Outline
Dimensions in mm (inch).
Package
DIL, Epoxy
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
4.05 (0.159)
3.75 (0.148)
0.5 (0.020)
0.3 (0.012)
0.8 (0.031)
0.6 (0.024)
2.54 (0.100)
7.8 (0.307)
7.4 (0.291) 6.6 (0.260)
6.3 (0.248)
0.3 (0.012)
0.25 (0.010)
0.8 (0.031)
2.2 (0.087)
1.9 (0.075)
3.5 (0.138)
3.0 (0.118)
7.62 (0.300) spacing
1.10 (0.043) 0.09 (0.004)
0.4 (0.016)
2.45 (0.096)
2.54 (0.100)
1.85 (0.073)
2.25 (0.089)
cathode
anode
Radiant sensitive area
Approx. weight 0.1 g GEOY6638
Diode system
2.0 (0.079) x 0.67 (0.026)
0.6 (0.024)
0.5 (0.020)
0.7 (0.028)
0...5˚
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Version 1.3 BPX 48
Approximate Weight:
0.1 g
TTW Soldering
IEC-61760-1 TTW
Disclaimer
Language english will prevail in case of any discrepancies or deviations between the two language wordings.
Attention please!
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances.
For information on the types in question please contact our Sales Organization.
If printed or downloaded, please find the latest version in the Internet.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any
costs incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose!
Critical components* may only be used in life-support devices** or systems with the express written approval of
OSRAM OS.
*) A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that
device or system.
**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be
endangered.
0
0s
OHA04645
50
100
150
200
250
300
t
T
˚C
235 ˚C - 260 ˚C
First wave
20 40 60 80 100 120 140 160 180 200 220 240
Second wave
10 s max., max. contact time 5 s per wave
Preheating
T
100 ˚C
120 ˚C
130 ˚C
Typical
Cooling
ca. 3.5 K/s typical
ca. 2 K/s
ca. 5 K/s
Continuous line: typical process
Dotted line: process limits
< 150 K
Version 1.3 BPX 48
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Glossary
1) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or
calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily
correspond to the actual parameters of each single product, which could differ from the typical data and calculated
correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data
will be changed without any further notice.
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Version 1.3 BPX 48
Published by OSRAM Opto Semiconductors GmbH
Leibnizstraße 4, D-93055 Regensburg
www.osram-os.com © All Rights Reserved.