2015-12-23 2
Version 1.3 BPX 48
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C, per single diode / für jede Einzeldiode)
Parameter Symbol Values Unit
Operating and storage temperature range Top; Tstg -40 ... 80 °C
Reverse voltage VR10 V
Total Power dissipation Ptot 50 mW
Electrostatic discharge
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD 2000 V
Parameter Symbol Values Unit
Photocurrent
(Ev = 1000 lx, Std. Light A, VR = 5 V, T = 2856 K)
(typ (min)) IP24 (≥ 15) µA
Wavelength of max. sensitivity (typ) λS max 900 nm
Spectral range of sensitivity (typ) λ10% (typ) 400
... 1150
nm
Radiant sensitive area (typ) A 1.54 mm2
Dimensions of radiant sensitive area (typ) L x W 0.7 x 2.2 mm x
mm
Half angle (typ) ϕ ± 60 °
Dark current
(VR = 10 V)
(typ (max)) IR10 (≤ 100) nA
Spectral sensitivity of the chip
(λ = 850 nm)
(typ) Sλ typ 0.55 A / W
Max. deviation from average for each single diode (typ) ∆S ±5 %
Quantum yield of the chip
(λ = 850nm)
(typ) η 0.80 Electro
ns
/Photon
Open-circuit voltage
(Ev = 1000 lx, Std. Light A)
(typ (min)) VO330 (≥ 280) mV
Short-circuit current
(Ev = 1000 lx, Std. Light A)
(typ) ISC 24 µA
Rise and fall time
(VR = 5 V, RL = 1 kΩ, λ = 850 nm)
(typ) tr, tf0.5 µs
Forward voltage
(IF = 100 mA, E = 0)
(typ) VF1.3 V
Capacitance
(VR = 0 V, f = 1 MHz, E = 0)
(typ) C025 pF
Temperature coefficient of VO(typ) TCV-2.6 mV / K