
BL Galaxy Electrical Production specification
Schottky Barrier Diode RB715F
Document number: BL/SSSKF027 www.galaxycn.com
Rev.A 1
FEATURES
z Extra small power mold type.
z Low VF.
z High reliability.
APPLICATIONS
z General purpose application.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
RB715F 3D SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter Symbol Limits Unit
Peak reverse voltage VRM 40 V
Diode reverse voltage VR 40 V
Average forward current IF 30 mA
Forward Surge Current t=1μS IFS 200 mA
Power Dissipation Pd 150 mW
Junction temperature Tj 125 ℃
Storage temperature range Tstg -40-+125 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR)R I
R= 100μA 40 V
Reverse voltage leakage current IR V
R=10V 1 μA
Forward voltage VF IF=1mA 370
mV
Diode capacitance CD V
R=1V f=1MHz 2.0 pF
Pb
Lead-free