To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2014
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3
FPF3040 — IntelliMAX™ 18 V-Rated Dual Input Single Output Power-Source-Selector Switch
FPF3040
IntelliMAX™ 18 V-Rated Dual Input Single Output
Power-Source-Selector Switch
Features
Dual-Input, Single-Output Load Switch
Input Supply Operating Range:
- 4~10.5 V at VIN
- 4~6.5 V at VBUS
Typical RON:
- 95 mΩ at VIN=5 V
- 70 mΩ at VBUS=5 V
Bi-Directional Switch for VIN and VBUS
Slew Rate Controlled:
- 50 µs at VIN for < 4.7 µF COUT
- 90 µs at VBUS for < 4.7 µF COUT
Maximum ISW: 2 A Per Channel
Break-Before-Make Transition
Under-Voltage Lockout (UVLO)
Over-Voltage Lockout (OVLO)
Thermal Shutdown
Logic CMOS IO Meets JESD76 Standard for GPIO
Interface and Related Power Supply Requirements
ESD Protected:
- Human Body Model: >3 kV
- Charged Device Model: >1.5 kV
- IEC 61000-4-2 Air Discharge: >15 kV
- IEC61000-4-2 Contact Discharge: >8 kV
Description
The FPF3040 is a 18 V-rated Dual-Input Single-Output
(DISO) load switch consisting of two channels of slew-
rate-controlled, low-on-resistance, N-channel MOSFET
switches with protection features. The slew-rate-
controlled turn-on characteristic prevents inrush current
and the resulting excessive voltage droop on the input
power rails. The input voltage range operates from
4 V to 6.5 V at VBUS and from 4 V to 10.5 V at VIN to
align with the needs of low-voltage portable device
power rails.
VIN and VBUS have the over-voltage protection
functionality of typical 12 V and 7.5 V, respectively, to
avoid unwanted damage to system.
VIN and VBUS bi-directional switching allows reverse
current from VOUT to VIN or VBUS for On-The-Go, (OTG)
Mode. The switching is controlled by logic input EN and
VIN_SEL is capable of interfacing directly with low-voltage
control signal General-Purpose Input / Output (GPIO).
FPF3040 is available in 1.8 mm x 2.0 mm Wafer-Level
Chip-Scale Package (WLCSP), 16-bump, 0.4 mm pitch.
Applications
Input Power Selection Block Supporting USB and
Wireless Charging
Smartphone / Tablet PC
Ordering Information
Part Number
Top
Mark
Channel
Typical RON per
Channel at 5VIN
Rise Time (tR)
Package
FPF3040UCX
QY
DISO
95 mΩ for VIN
50 µs for VIN
1.8 mm x 2.0 mm Wafer-Level Chip-Scale
Package (WLCSP), 16-Bump, 0.4 mm Pitch
70 mΩ for VBUS
90 µs for VBUS
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 2
Application Diagram
COUT
FPF3040
VIN VOUT
VBUS
CIN1
CIN2
OFF
VIN_SEL
DF_IN
Other_VIN_AVA
VI/O
VIN
VBUS
VOUT
ON
GND
EN
GND
VOUT
VOUT
VIN
VBUS
Figure 1. Typical Application
FPF3040
EN
R1
20 kΩ
R2
30 kΩ
1.8V GPIO
Charger
5V charging voltage at VOUT creates 3V at EN when
Q1 gate is LOW (OFF)
Note:
Q1 gate should be HIGH (ON) when not in OTG mode.
VOUT
Q1
Figure 2. Example Circuit for OTG Operation with Low-Voltage GPIO
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 3
Block Diagram
TSD
VREF Gate Driver
&
Logic Control
VCC
C1
C2
FPF3040
VIN
VBUS
VIN_SEL
Other_VIN_AVA
DF_IN
VOUT
VBUS
VOUT
GND
EN
C1
HV Power Device
SW1
C2
HV Power Device
SW2
VIN
VMAX
OVP
VCC
Startup
Reference Voltage
Reference Current
Thermal Protection
VCC
VGATE
GND
VOUT
VOUT
VIN
VBUS
Figure 3. Functional Block Diagram
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 4
Pin Configuration
Figure 4. Pin Assignment (Top View)
Figure 5. Pin Assignment (Bottom View)
Pin Description
Pin #
Name
Input / Output
Description
A1, B1, C1
VBUS
Input / Output
VBUS at USB: Power input / output.
bi-directional switch when VIN_SEL = LOW.
A4, B4, C4
VIN
Input / Output
VIN Supply Input: Power input / output.
bi-directional switch when VIN_SEL = HIGH.
A2, A3, B3, C3
VOUT
Input / Output
Switch Output: Power input / output.
C2
EN
Input
Enable: Active HIGH.
EN voltage ≥ 2.5 V can power internal circuit when VIN and VBUS
are absent.
1 MΩ pull-down resistor is included.
D4
VIN_SEL
Input / Output
Supply Selector & Status: Input power source selection input
and status output. This signal is ignored during EN=LOW.
Selector input during EN=HIGH:
HIGH = switch VIN to VOUT / LOW = switch VBUS to VOUT.
Status output during EN=LOW:
HIGH = VIN is used for VOUT / LOW = VBUS is used for VOUT.
D3
DF_IN
Input
Default Supply Selector during EN=LOW: Input.
Floating = VBUS connects to VOUT.
LOW means VIN connects to VOUT.
This signal is ignored during EN=HIGH. 1 µA pull-up current
source is included.
B2
Other_VIN_AVA
Output
Other Supply Input Status: Open-drain output.
HI-Z = both VIN and VBUS are valid.
LOW = the other power source is not valid.
D1, D2
GND
Ground
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 5
Table 1. Truth Table
EN
VIN>UVLO
VBUS>UVLO
VIN_SEL
DF_IN
Other_VIN_AVA
VOUT
Comment
HIGH
X
X
LOW
X
HI-Z if VIN & VBUS >UVLO
LOW if VIN or VBUS
<UVLO
VBUS
VOUT is selected by
VIN_SEL
Bi-directional channel
HIGH
X
X
HIGH
X
HI-Z if VIN & VBUS >UVLO
LOW if VIN or VBUS
<UVLO
VIN
LOW
YES
NO
HIGH
X
LOW
VIN
Automatic selection to
valid input
VIN_SEL is output.
LOW
NO
YES
LOW
X
LOW
VBUS
LOW
YES
YES
LOW
Floating
HIGH
VBUS
VOUT is selected by
DF_IN
VIN_SEL is output.
LOW
YES
YES
HIGH
LOW
HIGH
VIN
LOW
NO
NO
X
X
LOW
Floating
OFF
Notes:
1. Internal pull-down at EN.
2. 1 µA pull-up current source at DF_IN.
Absolute Maximum Ratings
Stresses exceeding the Absolute Maximum Ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
Min.
Max.
Unit
VPIN
VIN, VBUS to GND
Continuous
-1.4
18
V
Pulsed, 100 ms Maximum Non-Repetitive
-2.0
VOUT to GND(3)
-0.3
16.0
EN, DF_IN, VIN_SEL, Other_VIN_AVA to GND
-0.3
6.0
ISW
Maximum Continuous Switch Current per Channel
2
A
tPD
Total Power Dissipation at TA=25°C
2.25
W
TJ
Operating Junction Temperature
-40
+150
°C
TSTG
Storage Junction Temperature
-65
+150
°C
JA
Thermal Resistance, Junction-to-Ambient (1in. Square Pad of 2 oz. Copper)
55(4)
°C/W
ESD
Electrostatic Discharge
Capability
Human Body Model, JESD22-A114
3
kV
Charged Device Model, JESD22-C101
1.5
IEC61000-4-2
System Level(5)
Air Discharge (VIN, VBUS to GND)
15
Contact Discharge (VIN, VBUS to GND)
8
Notes:
3. If external voltage of more than 10.5 V is applied to VOUT, the slew rate should be less than 1 V/ms from 10.5 V.
4. Measured using 2S2P JEDEC standard PCB.
5. System level ESD can be guaranteed by design.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameters
Min.
Max.
Unit
VPIN
VIN
4.0
10.5
V
VBUS
4.0
6.5
TA
Ambient Operating Temperature
-40
+85
°C
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 6
Electrical Characteristics
VIN=4 to 10.5 V, VBUS=4 to 6.5 V, TA=-40 to 85°C unless otherwise noted. Typical values are at VIN=VBUS=5 V,
EN=HIGH and TA=25°C unless otherwise noted.
Symbol
Parameters
Condition
Min.
Typ.
Max.
Unit
Basic Operation
VIN
Input Voltage
4.0
10.5
V
VBUS
4.0
6.5
V
IQ
Quiescent Current
IOUT=0 mA, EN=HIGH,
VIN or VBUS=5 V
55
120
μA
IOUT=0 mA, EN=5 V,
VIN and VBUS=GND
33
70
μA
RON
On Resistance for VIN
VIN=8 V, IOUT=200 mA, TA=25°C
95
mΩ
VIN=5 V, IOUT=200 mA, TA=25°C
95
150
VIN=5 V, IOUT=200 mA,
TA=25°C to 85°C(6)
200
On Resistance for VBUS
VBUS=6 V, IOUT=200 mA, TA=25°C
70
mΩ
VBUS=5 V, IOUT=200 mA, TA=25°C
70
100
VBUS=5 V, IOUT=200 mA,
TA=25°C to 85°C(6)
140
VIH
Input Logic High Voltage
VIN=4 V~10.5 V, VBUS=4 V ~ 6.5 V
1.15
V
VIL
Input Logic Low Voltage
VIN=4 V~10.5 V, VBUS=4 V ~ 6.5 V
0.52
V
VEN(OTG)
EN Voltage in OTG Mode(6)
VIN & VBUS=Float or VIN & VBUS <VUVLO
2.5
V
REN_PD
Pull-Down Resistance at EN
707
1000
1360
kΩ
Protection
VUVLO
Under-Voltage Lockout
Threshold
VIN or VBUS Rising
3.05
3.50
4.00
V
VIN or VBUS Falling
2.55
3.00
3.55
V
VUVHYS
Under-Voltage Lockout
Hysteresis
0.5
V
VOVLO
Over-Voltage Lockout Threshold
VIN Rising Threshold
10.85
12.00
13.45
V
VIN Falling Threshold
11.5
V
VBUS Rising Threshold
6.52
7.50
8.32
V
VBUS Falling Threshold
7
V
VOVHYS
Over-Voltage Lockout
Hysteresis
VIN
0.5
V
VBUS
0.5
V
TSDN
Thermal Shutdown Threshold
150
°C
TSDNHYS
Thermal Shutdown Hysteresis
20
°C
Reverse Current Blocking
IRCB
VIN or VBUS Current During RCB
VOUT=8 V, VIN or VBUS=GND
30
μA
Dynamic Characteristics
tR
VOUT Rise Time, VBUS(6,7)
VIN=VBUS=5 V, RL=150 Ω, CL=4.7 μF,
TA=25°C
90
μs
VOUT Rise Time, VIN(6,7)
50
tF
VOUT Fall Time(6,7)
1.4
ms
tTRAN
Transition Delay(6,7)
50
100
ms
tSD
Selection Delay(6,7)
50
μs
Notes:
6. This parameter is guaranteed by characterization and/or design; not production tested.
7. tSD/tTRAN/tR/tF are defined in Figure 6.
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 7
Timing Diagram
Figure 6. Transition Delay (VIN=VBUS=5 V)
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 8
Typical Characteristics
Figure 7. VIN Quiescent Current (Iq) vs. Temperature
Figure 8. VBUS Quiescent Current (Iq) vs. Temperature
Figure 9. VIN Quiescent Current vs. Supply Voltage
Figure 10. VBUS Quiescent Current vs. Supply Voltage
Figure 11. VIN On Resistance (mΩ) vs. Temperature
Figure 12. VBUS On Resistance (mΩ) vs. Temperature
Figure 13. VIN On Resistance (mΩ) vs. Supply Voltage
Figure 14. VBUS On Resistance (mΩ) vs. Supply Voltage
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 9
Typical Characteristics (Continued)
Figure 15. VIN_SEL Input Logic High & Low Voltage
vs. Temperature
Figure 16. EN Input Logic High & Low Voltage
vs. Temperature
Figure 17. DF_IN Logic High & Low Voltage
vs. Temperature
Figure 18. VIN_VULVO vs. Temperature
Figure 19. VBUS_VULVO vs. Temperature
Figure 20. VIN_VOVLO vs. Temperature
Figure 21. VBUS_VOVLO vs. Temperature
Figure 22. VOUT tR vs. Temperature
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 10
Typical Characteristics (Continued)
Figure 23. VOUT tF vs. Temperature
Figure 24. tTRAN vs. Temperature
Figure 25. Power Source Transition (VIN=VBUS=5 V,
EN=HIGH, VIN_SEL=LOWHIGHLOW,
COUT=4.7 µF, RL=150 Ω)
Figure 26. VIN On Response (VIN=GND5 V,
VBUS=EN=GND, COUT=4.7 µF, RL=150 Ω)
Figure 27. VBUS On Response (VBUS=GND5 V,
VIN=EN=GND, COUT=4.7 µF, RL=150 Ω)
Figure 28. Off Response (VIN=VBUS=5 V, EN=HIGH,
VIN_SEL=LOHIGH or HIGHLOW, COUT=4.7 µF,
RL=150 Ω)
Figure 29. VIN Over-Voltage Protection Response
(VIN=5 V15 V, VBUS=5 V, EN=VIN_SEL=HIGH,
COUT=4.7 µF, RL=150 Ω)
Figure 30. VBUS Over-Voltage Protection Response
(VBUS=5 V15 V, VIN=5 V, EN=HIGH,
VIN_SEL=LOW, COUT=4.7 µF, RL=150 Ω)
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 11
Operation and Application Information
The FPF3040 is a 18 V, 2 A-rated, Dual-Input Single-
Output (DISO) load switch with slew-rate-controlled,
low-on-resistance, based-on-N-channel MOSFET. The
input operating range is from 4 V to 6.5 V at VBUS and
from 4 V to 10.5 V at VIN. The internal circuitry is
powered from the highest voltage source among VIN,
VBUS, and VEN.
Input Power Source Selection
Input power source can be selected by VIN_SEL and
DF_IN, respectively, depending on EN state. When EN
is HIGH, the input source is selected by VIN_SEL
regardless of DF_IN. If VIN_SEL is LOW, VBUS is selected.
If VIN_SEL is HIGH, VIN is selected.
Table 2. Input Power Selection by VIN_SEL
EN
VIN>UVLO
VBUS>UVLO
VIN_SEL
DF_IN
VOUT
HIGH
X
X
LOW
X
VBUS
HIGH
X
X
HIGH
X
VIN
When EN is LOW, the input source is selected by
DF_IN and the number of valid input sources. If only
one input source is valid, or more than UVLO, the
source is selected automatically, regardless of DF_IN,
to make a charging path in case the battery is depleted.
If both VBUS and VIN have valid input sources, the input
source is selected by DF_IN. If DF_IN is LOW, VIN is
selected. If DF_IN is HIGH or floating, VBUS is selected.
DF_IN is biased HIGH with an internal 1 µA pull-up
current source.
Table 3. Input Power Selection by DF_IN
EN
VIN>UVLO
VBUS>UVLO
VIN_SEL
DF_IN
VOUT
LOW
YES
NO
HIGH
X
VIN
LOW
NO
YES
LOW
X
VBUS
LOW
YES
YES
LOW
Floating
VBUS
LOW
YES
YES
HIGH
LOW
VIN
LOW
NO
NO
X
X
Floating
VIN_SEL can be the status output to indicate which input
power source is used during EN is LOW. If VIN is used,
VIN_SEL shows high. If VBUS is used, VIN_SEL shows LOW.
The voltage level of HIGH signal is 5.3 V if any one of
VIN, VBUS or EN is higher than 5.3 V. The signal is
highest voltage among VIN, VBUS, and VEN if none of
them is higher than 5.3 V.
EN Voltage for Control Logic Power
Supply
Internal control logic is powered from the highest
voltage among VIN, VBUS, and VEN. If valid VIN or VBUS
higher than UVLO is applied, ON/OFF control by EN
should be accomplished with VIH/VIL. If EN powers the
internal control block without valid VIN and VBUS, more
than 2.5 V is required on the EN pin to operate properly.
Over-Voltage Protection (OVP)
FPF3040 has over-voltage protection at both VIN and
VBUS. If VIN or VBUS is higher than 12 V or 7.5 V,
respectively, the power switch is off until input voltage is
lower than the over-voltage trip level by hysteresis
voltage of 0.5 V.
Reverse Power Supply for OTG
FPF3040 has a bi-directional switch so reverse power is
allowed for On-The-Go (OTG) operation. Even if both VIN
and VBUS are not available, reverse power can be also
supported if internal control circuitry is powered by EN.
Reverse-Current Blocking
FPF3040 supports reverse-current blocking during EN
LOW and an unselected channel.
Thermal Shutdown
During FPF3040 thermal shutdown, the power switch is
turned off if junction temperature reaches over 150°C to
avoid damage.
Wireless Charging System
FPF3040 can be used for an input power selector
supporting Travel Adaptor (TA) and Wireless Charging
(WC) with a single-input-based battery charger or Power
Management IC (PMIC), including a charging block as
shown in Figure 31. The system can recognize an input
power source change between 5 V TA and 5 V WC
without detection circuitry because FPF3040 has a
100 ms transition delay. OTG Mode can be supported
without an additional power path, such as a MOSFET.
Travel Adaptor
(5V)
Wireless Charging
(5V)
FPF3040
Li-Pol
BAT
System
PMIC
with
BAT Charger &
OTG Boost &
Power Path
VBUS
VIN
VOUT
EN, VIN_SEL, DF_IN
VIN_SEL, Other_VIN_Ava
Figure 31. Block Diagram of Input Power Selector for Wireless Charging System
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
FPF3040 • Rev. 2.4.3 12
Product Specific Package Information
D
E
X
Y
1.96 mm ±0.03 mm
1.76 mm ±0.03 mm
0.28 mm
0.38 mm
www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC