Rev.4.00 Sep 07, 2005 page 1 of 7
2SJ535
Silicon P Channel MOS FET REJ03G0885-0400
(Previous : AD E- 208-6 27 B)
Rev.4.00
Sep 07, 2005
Description
High speed power swit ching
Features
• Low on-resistance
RDS (on) = 0.028 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code:
PRSS0003AD-A
(Package name:
TO-220FM)
1. Gate
2. Drain
3. Source
D
G
S
123
2SJ535
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Drain to source voltage VDSS –60 V
Gate to source voltage VGSS ±20 V
Drain current ID –30 A
Drain peak current ID (pulse) Note 1 –120 A
Body to drain diode reverse drain current IDR –30 A
Avalanche current IAP Note 3 –30 A
Avalanche energy EAR Note 3 77 mJ
Channel dissipation Pch Note 2 35 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V (BR) DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown voltage V (BR) GSS ±20 — — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS — — –10 µA VDS = –60 V, VGS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Gate to source cutoff volta ge VGS (off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
RDS (on) — 0.028 0.037 Ω I
D = –15 A, VGS = –10 V Note 4 Static drain to source on state resistance RDS (on) — 0.038 0.055 Ω I
D = –15 A, VGS = –4 V Note 4
Forward transfer admittance |yfs| 15 25 — S ID = –15 A, VDS = –10 V Note 4
Input capacitan ce Ciss — 2500 — pF
Output capacitance Coss — 1300 — pF
Reverse transfer capacitance Crss — 300 — pF
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time td (on) — 25 — ns
Rise time tr — 150 — ns
Turn-off delay time td (off) — 350 — ns
Fall time tf — 220 — ns
VGS = –10 V
ID = –15 A
RL = 2 Ω
Body to drain diode forward voltage VDF — –0.95 — V IF = –30 A, VGS = 0
Body to drain diode reverse recovery time trr — 100 — ns IF = –30 A, VGS = 0
diF/dt = 50 A/µs
Note: 4. Pulse test
2SJ535
Rev.4.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Typical Output Characteristics
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics
–50
0
–10
–20
–30
–40
0–2–4–6–8
–10
–50
0
–10
–20
–30
–40
0 –1–2–3–4–5
Tc = 75°C
40
0
10
20
30
0 50 100 150 200
V
DS
= –10 V
Pulse Test
–10 V
–5 V
–8 V
–4 V
–2.5 V
–3.5 V
–3 V
V
GS
= –2 V
Pulse Test
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Maximum Safe Operation Area
–100
–3
–10
–300
–30
–1
–0.3
–0.1
–0.1 –0.3 –1 –3 –10 –30 –100
–1000
Ta = 25°C
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
1 ms
10 µs
100 µs
Operation in
this area is
limited by R
DS (on)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–5
0
–1
–2
–3
–4
0 –4 –8 –12 –16 –20
Pulse Test
I
D
= –50 A
–20 A
–10 A
Drain Current ID (A)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
0.2
0.1
0.02
0.05
0.01
–3 –100 –300–1 –30–10 –100
0
1
0.5
V
GS
= –4 V
–10 V
Pulse Test
–25°C
25°C
2SJ535
Rev.4.00 Sep 07, 2005 page 4 of 7
0.10
–40 0 40 80 120 160
Case Temperature Tc (°C)
0
0.02
0.04
0.06
0.08
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
I
D
= –50 A
I
D
= –30 A
–10 A, –20 A
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
100
30
3
10
0.3
1
0.1
–0.1 –0.3 –1 –3 –30–10 –100
Tc = –25°C
75°C
V
DS
= –10 V
Pulse Test
25°C
Reverse Drain Current IDR (A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
–0.1 –0.3 –1 –3 –10 –30 –100
1000
500
100
200
50
10
20 di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
0 –10 –20 –30 –40 –50
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
3000
300
30
100
10
Ciss
Coss
Crss
V
GS
= 0
f = 1 MHz
0
0
Gate Charge Qg (nc)
Drain to Source Voltage VDS (V)
0
–20
–16
–12
–8
–4
–100
–80
–60
–40
–20
Gate to Source Voltage VGS (V)
Dynamic Input Characteristics
40 80 120 160 200
V
DS
V
GS
1000
200
500
100
20
50
10 –0.3 –1 –3 –30–10 –100
–0.1
tf
tr
td(off)
td(on)
Drain Current ID (A)
Switching Time t (ns)
Switching Characteristics
V
DD
= –10 V
–25 V
–50 V
V
DD
= –10 V
–25 V
–50 V
–10 V
V
GS
= –4 V
–20 A
–50 A
–10 A
V
GS
= –10 V, V
DD
= –30 V
PW = 5 µs, duty ≤ 1 %
2SJ535
Rev.4.00 Sep 07, 2005 page 5 of 7
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
100
25 50 75 100 125 150
0
20
40
60
80
Channel Temperature Tch (°C)
Repetitive Avalanche Energy E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
I
AP
= –30 A
V
DD
= –25 V
duty < 0.1 %
Rg ≥ 50 Ω
–50
0
–10
–20
–30
–40
0 –0.4 –0.8 –1.2 –1.6 –2.0
Pulse Test
–5 V
V
GS
= 0
–10 V
Avalanche Test Circuit Avalanche Waveform
0
I
D
V
DS
I
AP
V
(BR)DSS
V
DD
E
AR
= • L • I
AP2
•
2
1V
DSS
V
DSS
– V
DD
D.U.T
Rg
I
AP
Monitor
V
DS
Monitor
V
DD
50 Ω
Vin
–
15 V
L
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance γ s (t)
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
P
DM
PW
T
D = PW
T
θch – c (t) = γ s (t) • θch – c
θch – c = 3.57°C/W, Tc = 25°C
2SJ535
Rev.4.00 Sep 07, 2005 page 6 of 7
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
90%
10%
tf
Switching Time Test Circuit Waveform
Vin Monitor
D.U.T.
Vin
–10 V
R
L
Vout
Monitor
50 Ω
V
DD
= –30 V
2SJ535
Rev.4.00 Sep 07, 2005 page 7 of 7
Package Dimensions
10.0 ± 0.3
7.0 ± 0.3 3.2 ± 0.2
12.0 ± 0.3
0.6
2.8 ± 0.2
2.5 ± 0.2
17.0 ± 0.3
14.0 ± 1.0
0.5 ± 0.1
2.5
4.45 ± 0.3
5.0 ± 0.3
2.0 ± 0.3
0.7 ± 0.1
2.54 ± 0.52.54 ± 0.5
1.2 ± 0.2
1.4 ± 0.2
φ
Package Name
PRSS0003AD-A TO-220FM / TO-220FMV
MASS[Typ.]
1.8gSC-67
RENESAS CodeJEITA Package Code
Unit: mm
Ordering Information
Part Name Quantity Shipping Container
2SJ535-E 500 pcs Box (Sack)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
Renesas Technology Malaysia Sdn. Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
RENESAS SALES OFFICES
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0
