2SK5790,2SK53800,___ 2SK5796,,2SK5808S | vA N F4#/- MOS FET BREAN ALY FYI CITT 1a] Type 6.5 2.3 * x be-().5 yoy s +E we] 4 il oa I t 25 a 1 & i 3 2 Skelit) al pe 0.75 0.754 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING O Type 4 16.3 Lr kB: 2 Fr4iv BY o At 4 Fray? re0.5 2.29 | 2.29 1,2 (DPAK) Mi@xtmATH ABSOLUTE MAXIMUM RATINGS ( 7a=25 ) 2SK579M, | 2SK580@, TH | Symbol | 2sks579@' | 28K380@' | Unit Fvr4yv+ VY 2 BIE Voss 450 500 Vv P- bk + Y A EH | Vess +15 +15 Vv Rob 4 be | b 1.5 1.5 A th oA SR OF Ob 4 BE OF | Loiputses* 6 6 A moF Lv 4 | ibe 1.5 1.5 A a EF + RoW HR] Per** 20- 20 Ww Foo Re HB RE Trek 150 150 Cc as FE ii. ff Tog 55~+150| 55~+150 Cc * SIV AMS10us, Fa-F e+ 7ns1% * PW10us, duty cycle = 1% #* To=25C BI SRI ** Value at Tco=25C MAA ELECTRICAL CHARACTERISTICS ( 7a=25'C ) (Dimensions in mm) 2,4 Gate : Drain Source Drain BASF + SNVIBKOS ABI K BBE MAXIMUM CHANNEL DISSIPATION CURVE 30 Ww) 29 FRE F + RAR Pes ( 4 AUB Te (C) iH HH Symbol Test Condition aSKS790, 2SK579 2SK5800, 28K 5806) Unit min. ; typ. | max.: min. | typ. | max. FeR4 >> VY-Z2RRB EE Vigrvoss In=10mA, Ves=0 450 ~! 500]; | Vv Fh + YR BE | Vaeress Ile=+100uA, Vos=0 +15} ] |] +15] | Vv 7, fe Kr BH ft | Jess Ves=+12V, Vos=0 _ | +10 } | +10! vA ; Vos =360V, Ves=0 { ~| 100) ~} _ Fo ov 4 8 wt | bss uA Vos=400V, Ves=0 _ _ _ _ 100 Fok VY AER BE Vasoff) Jp=1mA, Vos=10V 2.0 | 4.01 2.0] | 4.0 Fea > + YVOAA YER | Rosen Ip=1A, Ves=10V* 1 3.5} 5.5 i 4.0} 6.0} 9 IB fa EP OF fF Fy} RI] | yp | Jp=1A, Vos=20V* 0.6/ 1.0 ]| 0.6] 1.0 _ A A & aia Ciss | 260 _ ]| 260 ~ | pF = Vos=10V, Ves=0 . i yn as 4 Coss _ 95 _ _ 95 |. pF ; = - > = F=1MHz wt {eB 1 & Bact Crss 7 12 _ _ 12 _ pF F- > Fe y cE GE OB PL tecon 8 _ _ 8 | ns we 6 bk w DR fe t In=1A, Ves=10V _ 20 _ _ 20 j] ns F- + A 7 3B HE OR | otters Ri =30Q 28 _ 28 ]| ns TF Bae iy fl | s | 20; ~; | 20] |] os 5 4 * I BE | Vor Ir=1.5A, Ves=0 f 10! ~| ] iol ~i v soe ia] 1 He jis br fr=1.5A, Ves =0, dir/dt=100A/us | 250 j; 250 | ns SLA RIE * Pulse Test @- HITACHI . 989