SILICON PNP EPITAXIAL TYPE YT S41 26 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: * Low Leakage Current : Ipo=-50nA(Max.) @ Vcp=-20V 3 a Ippoz50nA (Max.) @ Vpp_=-3V a * Low Saturation Voltage | i 3 1 Noa oo : Vor (sat) 7-0+4V (Max. ) @ I=-50mA, Ip=-5mA oo | iu *o 4 ! * Low Collector Output Capacitance ! t : Cop=4.5pF(Max.) @ Vop=-5V 4] 1. EMITTER * Complementary to YTS4124 2. BASE 3. COLLECTOR JBDEC - BLAS sc-59 TOSHIBA 2-SF1A Weight: 0.012g MAXIMUM RATINGS (Ta=25C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Vero -25 V Collector-Emitter Voltage Vero ~25 v aa Emitter-Base Voltage VeBo 4 Vv Collector Current I -200 mA Base Current ip -50 mA Collector Power Dissipation P 200 mW (Ta=25C) Derate Linearly 25C c 1.6 mW/C Thermal Resistance R ._ 625 c/w (Junction to Ambient) th(j-a) Junction Temperature Tj 150 C Storage Temperature Range Tstg -55~ 150 c Marking Type Name A 7 1107YTS4126 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. | MAX. | UNIT Collector Cut-off Current IcBo VcB=-20V, If=0 - - -50 | nA Emitter Cut-off Current TEBO Vep=-3V, Ic=0 - - -50 | nA Collector-Base _ Breakdown Voltage Vpr)cBo} Ic=-10uA, Ip=0 725 7 - Vv Collector-Emitter V Ic=-ImA. Ine Breakdown Voltage (BR)CEO) Ec=ImA, Ip=0 25 ~ ~ v Emitter-Base Breakdown Voltage V(BR)EBO| Ig=-l0uA, Ic=0 4 ] - - v hFE(1) | VCE=-1V, Ic=-2mA 120 | - 360 DC Current Gain hre(2)| Voe=-1V, Ic=-50mA 60 ~ - Collector-Emitter Saturation Voltage VcE(sat) | Ic=-50mA, Ip=-5mA - - -0.4 Vv Base-Emitter Saturation Voltage VBE(sat) | Ic=-50mA, Ip==5mA - 170.95 Vv Small Signal Forward In VcE=-20V, Ic=-10mA 2.5 _ _ Current Transfer Ratio fe =100MHz : ok VcE=-20V, Ic=-10mA T t F f - - ransition Frequency T =100MHz 250 MHz Collector Output Capacitance Cob VcB=-5V, Ig=0, f=1MHz - - 4.5 pF Input Capatitance Cib Vep=-0.5V, Ic=0, =1MHz - - 10 pF Small Signal Current Gain hfe VcE=-10V, Ic=-2mA, f=1kHz| 120 - 480 Noise Figure NF VcE=-5V, Ic=-100 A - - 4] dB Rg=1kQ2, =10Hzv 15.7kHz 1108