ECH8664R
No. A1 185-1/7
Features
• Low ON-resistance • Built-in gate protection resistor
•
2.5V drive • Best suited for LiB charging and discharging switch
•
Common-drain type • Halogen free compliance
•
Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGSS ±12 V
Drain Current (DC) ID7A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 60 A
Allowable Power Dissipation PD
When mounted on ceramic substrate (900mm
2
×0.8mm) 1unit
1.3 W
Total Power Dissipation PT
When mounted on ceramic substrate (900mm
2
×0.8mm)
1.4 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Package Dimensions
unit : mm (typ)
7011A-003
62712 TKIM/72308PE TIIM TC-00001451
SANYO Semiconductors
DATA SHEET
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : ECH8
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL Marking
Electrical Connection
Ordering number : ENA1185A
ECH8664R P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
8765
1234
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
14
85
0.15
0 to 0.02
0.25
0.25 2.8
2.3
0.65
2.9
0.3
0.9
0.07
Top View
Bottom View
TL
TK
LOT No.
ECH8664R-TL-H
ECH8664R
No. A1 185-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 30 V
Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 1 μA
Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 0.5 1.3 V
Forward Transfer Admittance | yfs |VDS=10V, ID=3.5A 4.5 7.5 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=3.5A, VGS=4.5V 12.5 18 23.5 mΩ
RDS(on)2 ID=3.5A, VGS=4.0V 13 19 25 mΩ
RDS(on)3 ID=2A, VGS=3.1V 14.5 21 27.3 mΩ
RDS(on)4 ID=2A, VGS=2.5V 14.5 24 34 mΩ
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
270 ns
Rise Time tr 850 ns
Turn-OFF Delay Time td(off) 3300 ns
Fall Time tf1700 ns
Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=7A 10 nC
Gate-to-Source Charge Qgs 2.1 nC
Gate-to-Drain “Miller” Charge Qgd 2.0 nC
Diode Forward Voltage VSD IS=7A, VGS=0V 0.75 1.2 V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
ECH8664R-TL-H ECH8 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=3.5A
RL=4.3Ω
VDD=15V
VOU
T
ECH8664R
VIN
4V
0V
VIN
Rg
Rg=1kΩ
ECH8664R
No. A1 185-3/7
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V
ID -- VGS
Drain Current, ID -- A
Ambient Temperature, Ta -- °C
RDS(on) -- Ta
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
Source Current, IS -- A
IS -- VSD
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
IT13618
0.1 0.4 0.50.2 0.3 0.6 0.7 0.90.8 1.0
264810
5
10
15
20
25
30
40
35
45
50
IT13619
IT13620 IT13621
0.001
0.01
7
5
3
2
0.1
7
5
3
2
2
1.0
7
5
3
2
1.0
2
2
3
3
10
7
7
5
5
0.1 5723 1.0 2
Ta= --25°C
75°C
25°C
VDS=10V
--25
°
C
25
°
C
Ta=75
°
C
VGS=0V
10
573
10
7
5
3
0
IT13617
0 0.5 1.0 1.5 2.0 2.5
1
4
7
8
9
2
5
3
6
10
--25
°
C
Ta=75°C
25
°
C
VDS=10V
Ta=25°C
ID=2.0A
3.5A
SW Time -- IDVGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
Switching Time, SW Time -- ns
Drain Current, ID -- A
2
2
1000
100
7
5
3
7
5
3
0.01 20.1 1.0
357 2357
IT13684
VDD=10V
VGS=4.5V
td(off)
td(on)
tr
tf
10
23 57 01 3 5 72468910
0
0.5
1.5
2.5
3.5
1.0
2.0
3.0
4.0
4.5
IT13685
VDS=10V
ID=7A
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain Current, ID -- A
0
0
1
2
3
4
5
6
7
8
9
10
0.2 0.3 0.50.1 0.4
IT13807
VGS=1.5V
2.5V
4.0V
10.0V
3.1V
4.5V
-60 --40 --20 0 4020 8060 120100 140 160
5
10
20
15
25
30
35
45
40
50
VGS=3.1V, ID=2.0A
VGS=2.5V, ID=2.0A
VGS=4.0V, ID=3.5A
VGS=4.5V, ID=3.5A
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
ECH8664R
No. A1 185-4/7
IT13799
0
020 40
0.4
60 80 100 120 140 160
Ambient Temperature, Ta -- °C
PD -- Ta
Allowable Power Dissipation, PD -- W
1.0
1.4
1.3
1.6
0.2
0.8
0.6
1.2
1unit
Total Dissipation
When mounted on ceramic substrate
(900mm2×0.8mm)
A S O
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
IT13808
2
2
3
5
7
0.1
2
3
5
7
1.0
0.01
0.01 0.1
5723 2 1.0
5732
10
573325
Operation in this
area is limited by RDS(on).
100μs
100ms
DC operation
10ms
1ms
2
3
5
7
3
2
5
7
10
100
IDP=60A
ID=7A
PW≤10μs
Ta=25°C
Single pulse
When mounted on ceramic substrate
(900mm2×0.8mm)
1unit
ECH8664R
No. A1 185-5/7
Embossed Taping Specifi cation
ECH8664R-TL-H
ECH8664R
No. A1 185-6/7
Outline Drawing Land Pattern Example
ECH8664R-TL-H
Mass (g) Unit
0.02
* For reference
mm Unit: mm
0.4
0.6
2.8
0.65
ECH8664R
PS No. A1185-7/7
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the ECH8664R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
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