R6008ANX - Rohm Semiconductor

Datasheet

www.rohm.com

1/13

2012.01 - Rev.C

R6008ANX

Nch 600V 8A Power MOSFET

Bulk

-

Type

Packing

mJ

V

4.3

Tape width (mm) -

Reel size (m m)

Value

V

500

±8

±30

A

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current 4

-

EAR *4 mJ

A

3.4

R6008ANX

Unit

600

EAS *3

ID,pulse *2

ID *1 ±3.8

V/ns

150

°C

W

°C

15

−55 to +150

50

Reverse diode dv/dt

IAR *3

Range of storage tem perature Tstg

Power dissipation (Tc = 25°C)

dv/dt *5

Junction temper ature

PD

Tj

A

Symbol

Basic ordering unit ( pcs )

Pulsed drain current

Switching Power Supply

VDSS

ID *1

VGSS

±32

Marking

Taping code

1) Low on-resistance.

6) Pb-f ree lead plating ; RoHS compliant

Gate - Sour ce voltag e

Parameter

Tc = 25°C

Drain - Source voltage

Absolute m axi m um r at i ngs (T

a

= 25°C)

Tc = 100°C

Features

50W

Continuous drain current

3) Gat e-source voltage (VGSS) gu aranteed to be ±30V.

Application

4) Drive circuits can be simple.

2) Fast switching speed.

Outline

Inner circuit

Packaging specifi cat ions

TO-220FM

600V

0.8Ω

8A

5) Parallel use is easy.

V

DSS

R

DS(on)

(Max.)

I

D

PD

(1) Gate

(2) Drain

(3) Source

*1 Body Diode

(1) (2) (3)

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Data Sheet

R6008ANX

2/13

2012.01 - Rev.C

Ω

Gate input r esist anc e RGf = 1MHz, open drain -8.2 -

Static drain - source

on - state resistance RDS(on) *6 Ω

Tj = 25°C-0.6 0.8

Tj = 125°C -1.3 -

VGS = 10V, ID = 4A

Gate thr es hold voltage VGS (th) VDS = 10V, ID = 1mA 2.5

Gate - Sour ce leakage curr ent VGS = ±30V, VDS = 0V

-

700

Tj = 25°C

Drain - Source avalanche

breakdown voltage -

600

-

IDSS

IGSS -

V(BR)DS

Symbol Conditions Values

-

-70

°C

-

±100

-

4.5

0.1

-

V

Symbol

-

Unit

°C/W

-

2.5-

-

nA

V/ns

Tj = 125°C

50

V

RthJC

265

µA

100

1000

Parameter

Zero gat e voltag e

drain current

V(BR)DSS

VGS = 0V, ID = 8A

VGS = 0V, ID = 1mA

Values

Parameter

Drain - Source breakdown

voltage

VDS = 600V, VGS = 0V

ConditionsSymbol



Absolute m axi m um r at i ngs



Thermal resistance

Therm al res ist ance, junction - case

Parameter

Max.

V

Therm al res ist ance, junction - ambient

Soldering temperature, wavesoldering f or 10s



Electrical characterist i cs (Ta = 25°C)

Drain - Source voltage slope dv/dt VDS = 480V, ID = 8A

-

Typ.

Values

Typ.

°C/W

Unit

Max.

Unit

Tsold

RthJA

Min.

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Data Sheet

R6008ANX

3/13

2012.01 - Rev.C

*1 Limited only by maximum temperature allowed.

*2 PW

≤

10

µ

s, Duty cycle

≤

1%

*3 L ⋍ 500µH, V

DD

= 50V, R

G

= 25Ω, starting T

j

= 25°C

*4 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz

*5 Refer ence m eas ur em ent circuits Fig. 5- 1.

*6 Pulsed

Max.

Reverse transfer capacitance



Electrical characterist i cs (T a = 25°C)

Parameter Symbol Conditions Values Unit

Min. Typ.

5.0Transconductance

Input capacitanc e

2.5

Output c apacit ance Coss VDS = 25V -

- S

Ciss VGS = 0V -680 -

gfs *6 VDS = 10V, ID = 4.0A

pF

-

pF

-36.5 -

-36.7

-

Crss f = 1MHz -35 -

450

Turn - on delay time td(on) *6 VDD ⋍ 300V, VGS = 10V -

Effective output capacitance,

energy related

Effective output capacitance,

time related

Co(er)

Co(tr)

VGS = 0V,

VDS = 0V to 480V

ns

60 120

35 70

-25

-

RG = 10Ω-

RL = 75Ω-

-



Gate Charge charact er i st i cs (Ta = 25°C)

Rise tim e tr *6 ID = 4A

Symbol Values

25

Typ.

Turn - off delay time td(off) *6

Fall tim e tf *6

Total g ate charge

Gate - Sour ce c har ge Qgs *6 ID = 8A

Qg *6 VDD ⋍ 300V

VGS = 10V

Unit

- 5 -

Min.

nC

21 -

Conditions

10 -

-

Max.

Parameter

6.0

-

VGate plateau voltag e V(plateau) VDD ⋍ 300V, I D = 8A - -

Gate - Dr ain char ge Qgd *6

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Data Sheet

R6008ANX

4/13

2012.01 - Rev.C

- A

A

1.5 V

ns

32

8

-

Rth1

Peak rat e of fall of reverse

recovery current dirr/dt

Symbol Value



Typical Transient Thermal Charact er istics

370

Symbol Value Unit Unit

-

Rth3 2.18 Cth3 0.46

A/µs

-

Tj = 25°C

0.00166

K/W Ws/K

Rth2 0.977 Cth2 0.0191

0.263 Cth1

-

Qrr *6

Irrm *6

IS *1

ISM *2

-



Body di ode electrical char act er i st ics (Source-Drain) (Ta = 25°C)

-3.0 -µC

VSD *6 VGS = 0V, IS = 8A

Typ.

Forward voltage

Reverse recovery time

Tc = 25°C

IS = 8A

di/dt = 100A/µs

376

- -

-

Unit

Min. Max.

Peak reverse rec overy current

Parameter Symbol Conditions Values

Reverse recovery charge

trr *6

-

Inverse diode continuous,

for ward curr ent

Inverse diode direct cur r ent ,

pulsed

-16

-

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Data Sheet

R6008ANX

5/13

2012.01 - Rev.C

Electrical characterist i c cur ves

0

20

40

60

80

100

120

050 100 150 200

0.0001

0.001

0.01

0.1

1

10

100

1000

0.0001 0.01 1100

Ta = 25ºC

Single Pulse

Rth(ch-a)(t) = r(t)×Rth(ch-a)

Rth(ch-a) = 70ºC/W

top D = 1

D = 0.5

D = 0.1

D = 0.05

D = 0.01

D = Single

0.01

0.1

1

10

100

0.1 110 100 1000

Ta = 25ºC

Single Pulse

PW = 10ms

PW = 100us

PW = 1ms

Operation in this

area is limited

by RDS(ON)

Fig.1 Power Dissipation Derating Curve

Power Dissipation : PD/PD max. [%]

Junction Temperature : Tj [°C]

Fig.2 Maximum Safe Operating Area

Drain Current : I D [A]

Drain - Source Voltage : VDS [V]

Fig.3 Normaliz ed Transient Thermal

Resistance vs. Pulse Width

Norm alized T rans ient T her mal Resistance : r(t)

Pulse Width : PW [s]

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Data Sheet

R6008ANX

6/13

2012.01 - Rev.C

Electrical characterist i c cur ves

0

20

40

60

80

100

120

025 50 75 100 125 150 175

Fig.4 Avalanche Current vs Inductive Load

Avalanche C urr ent : IAR [A]

Coil Inductanc e : L [m H]

Fig.5 Avalanche Power Losses

Avalanche Power Losses : PAR [W]

Frequency : f [Hz]

Fig.6 Avalanche Energy Derating Curve

vs Junction Temperature

Avalanche Ener gy : EAS / EAS max. [%]

Junction Temperature : Tj [ºC]

0

1

2

3

4

5

0.01 0.1 110 100

Ta = 25ºC

VDD = 50V , RG = 25Ω

VGF = 10V , VGR = 0V

0

500

1000

1500

2000

2500

3000

3500

4000

1.0E+04 1.0E+05 1.0E+06

Ta = 25ºC

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Data Sheet

R6008ANX

7/13

2012.01 - Rev.C

Electrical characterist i c cur ves

Fig.7 Typical Output Characteristics(I)

Drain Current : I D [A]

Drain - Source Voltage : VDS [V]

Fig.8 Typical Output Characteristics(II)

Drain Current : I D [A]

Drain - Source Voltage : VDS [V]

Fig.9 Tj = 150°C Typical Output

Characteristics(I)

Drain Current : I D [A]

Drain - Source Voltage : VDS [V]

Fig.10 Tj = 150°C Typical Output

Characteristics(II)

Drain Current : I D [A]

Drain - Source Voltage : VDS [V]

0

2

4

6

8

0 5 10 15 20

Ta = 25ºC

Pulsed

5.0V

VGS= 4.5V

6.0V

7.0V

8.0V

6.5V

10.0V

5.5V

0

2

4

6

8

012345

Ta = 25ºC

Pulsed

VGS= 4.5V

5.0V

6.0V

5.5V

6.5V

7.0V

8.0V

10.0V

0

2

4

6

8

0 5 10 15 20

Ta = 150ºC

Pulsed

5.5V

V

GS

= 4.5V

6.5V

10V

6.0V

8.0V

7.0V

0

1

2

3

4

5

012345

Ta = 150ºC

Pulsed

VGS= 4.5V

10V

6.5V

5.5V

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Data Sheet

R6008ANX

8/13

2012.01 - Rev.C

Electrical characterist i c cur ves

500

550

600

650

700

750

800

850

900

-50 0 50 100 150 0.01

0.1

1

10

100

0.0 1.5 3.0 4.5 6.0

VDS = 10V

Pulsed

Ta = 125ºC

Ta = 75ºC

Ta = 25ºC

Ta = -25ºC

0

1

2

3

4

5

6

-50 0 50 100 150

VDS = 10V

I

D

= 1mA

0.001

0.01

0.1

1

10

100

0.001 0.01 0.1 110 100

VDS = 10V

Pulsed

Ta = -25ºC

Ta = 25ºC

Ta = 75ºC

Ta = 125ºC

Fig.11 Breakdown Voltage

vs. Junction Temperature

Drain - Source Breakdown Voltage : V(BR)DSS [V]

Junction Temperature : Tj [°C]

Fig.12 Typical Transfer Characteristics

Drain Current : I D [A]

Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage

vs. Junction Temperature

Gate Thr es hold Voltage : VGS(th) [V]

Junction Temperature : Tj [°C]

Fig.14 Transconductance vs. Drain Current

Transconductance : gfs [S]

Drain Current : I D [A]

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Data Sheet

R6008ANX

9/13

2012.01 - Rev.C

Electrical characterist i c cur ves

0

0.5

1

1.5

2

0 5 10 15

ID = 4A

ID = 8A

Ta = 25ºC

Pulsed

0

0.5

1

1.5

2

-50 0 50 100 150

VGS = 10V

Pulsed

ID = 4A

ID = 8A

0.1

1

10

0.001 0.01 0.1 110

VGS = 10V

Pulsed Ta = 125ºC

Ta = 75ºC

Ta = 25ºC

Ta = -25ºC

Fig.15 Static Drain - Source On - State

Resistance vs. Gate Source Voltage

Static Drain - Source On-State Res istance

: RDS(on) [Ω]

Gate - Source Voltage : VGS [V]

Fig.16 Static Drain - Source On - State

Resistance vs. Junction Temperature

Static Drain - Source On-State Res istance

: RDS(on) [Ω]

Junction Temperature : Tj [ºC]

Fig.17 Static Drain - Source On - State

Resistance vs. Dr ain Curr ent

Static Drain - Source On-State Res istance

: RDS(on) [Ω]

Drain Current : I D [A]

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Data Sheet

R6008ANX

10/13

2012.01 - Rev.C

Electrical characterist i c cur ves

0

1

2

3

4

5

6

0200 400 600

Ta = 25ºC

1

10

100

1000

10000

0.1 110 100 1000

Ciss

Coss

Crss

Ta = 25ºC

f = 1MHz

VGS = 0V

0

5

10

15

0 5 10 15 20 25 30

Ta = 25ºC

VDD ⋍ 300V

ID = 8A

RG = 10Ω

Pulsed

Fig.18 Typical Capacitance

vs. Drain - Source Voltage

Capacitance : C [pF]

Drain - Source Voltage : VDS [V]

Fig.19 Coss Stored Energy

Coss Stored Energy : EOSS [uJ]

Drain - Source Voltage : VDS [V]

Fig.20 Switching Characteristics

Switching Time : t [ns]

Drain Current : I D [A]

Fig.21 Dynamic Input Characteristics

Gate - Source Voltage : VGS [V]

Total Gate Charge : Qg [nC]

1

10

100

1000

10000

0.01 0.1 110 100

tf

td(on)

td(off)

tr

Ta = 25ºC

VDD = 300V

VGS = 10V

RG = 10Ω

Pulsed

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Data Sheet

R6008ANX

11/13

2012.01 - Rev.C

Electrical characterist i c cur ves

0.01

0.1

1

10

100

00.5 11.5

Ta = 125ºC

Ta = 75ºC

Ta = 25ºC

T

a

= -25ºC

VGS = 0V

Pulsed

10

100

1000

0.1 110 100

Ta = 25ºC

di / dt = 100A / μs

VGS = 0V

Pulsed

Fig.22 Inverse Diode Forwar d Curr ent

vs. Source - Drain Volt age

Inverse Diode Forward Cur rent : IS [A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Time

vs.Inverse Diode Forward Current

Reverse Recovery Time : trr [ns]

Inverse Diode Forward Cur rent : IS [A]

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Data Sheet

R6008ANX

12/13

2012.01 - Rev.C

Measurement ci r cui ts

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform

Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform

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Data Sheet

R6008ANX

13/13

2012.01 - Rev.C

Dimensions (Unit : mm)

Dimension in mm/inches

D

b1

E1

E

e

b

c

F

A2

A1

AL

xA

A4

φp

Q

A

TO-220FM

MIN MAX MIN MAX

A16.60 17.60 0.654 0.693

A1 1.80 2.20 0.071 0.087

A2 14.80 15.40 0.583 0.606

A4 6.80 7.20 0.268 0.283

b0.70 0.85 0.028 0.033

b1 1.10 1.50 0.043 0.059

c0.70 0.85 0.028 0.033

D9.90 10.30 0.39 0.406

E4.40 4.80 0.173 0.189

e

E1 2.70 3.00 0.106 0.118

F2.80 3.20 0.11 0.126

L11.50 12.50 0.453 0.492

p3.00 3.40 0.118 0.134

Q2.10 3.10 0.083 0.122

x - 0.381 -0.015

2.54

0.10

DIM

MILIMETERS

INCHES

R1120A

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The content specied herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the specications,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products specied in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

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While ROHM always makes efforts to enhance the quality and reliability of its Products, a

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Please be sure to implement in your equipment using the Products safety measures to guard

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