MOTOROW
SEMICONDUCTORTECHNICALDATA Order this dooument
by 2C2W7AHVID
@
2C2907AHV Chip
PNP Silicon .11
Smal14ignal Transistor [
~+“~
..designed for dc to VHF amplifier and generaburpose witching applications.
MMIMUM RATINGS ‘,:-,$<!.,...!T,,$
,~ili$\\i
,,>~,. ~,
Rating symbol Value .,,;~~:>-
?~i....,>,.,:i,,Unit
Colleotor-Em.wr Vobge VCEO 60 ~{, “:} “‘ Vdo
Oolleotor+aee Vobge VCBO 6#~~\ “’’’”” Vdo
Emitter=ase Vohge VEBO $$$~.$.o“~ Vdo
ColleotorCurrent Ic +~’”$ itio{’,*$ mAdo
PowerDissiWtion@TA=25°C PD “’” “’’’s’:””400
‘.$,,
,+\:::..?*f,~.. mW
Dsrate above 25°C .$!,+,, 2.28 mW/OC
,s
StorageandJuMon TemperatureRange TNW,Q “$‘-85 to +200 “c
:$,)..,,
‘,....., ,,,,..
.,.., .
ELECTRICAL CHARACTERISTICS ~A =~sri~jfif~ otha~.setiw.)
Chamotedtic #~~$k#rnb~l IMin M= Unit
OFF CHARAOTERISTIM -.,<.:~,t....:,.,~.i
,ti,\\?~:6,
%$/,t,.,,. .
\.t..
Colleotor-EmMerBreakdownVol*’~&${}:$ V(BR)CEO 80 v&
(1C=10 mAdo)
Collaor+aae Breakdown V(BR)CBO 60 —Vdc
(1C=10 @*) ,,~’”
Emtier+ese Bre@@wge V(BR)EBO 5.0 —v&
(1C=10 @&)*,$~<,3
Colleotor C~:*ifit ICBO
~CB =%;~)s ‘—
~CQ..%@*. TA =150”C~
10 mdo
—10 @do
iE~ —50 nA&
OtoMO W, D@ Cycle1.0to 2.0%. (mntinued)
Technaloglw
Opl)muon
Physical
Characteristics: I
Die Size -
22x 22 rolls
Die Thickness —
>11 roils
Bond Pad Sire.
Emitter— 4.45 sq.
Base—4.4 sq.
Back Metal
20 ~Gold (Nom)
Top Metal
15 ~Alum.(Nom)
Back Side =Colleotor
rRW O
9/93
@MO=ROLA
@Motorola,Im. 19W
2C2907AHV
—
ELECTRICALCHARACTERISTl~ —contlnud ~A =25°C unlessothetise noted.)
Chara*rfattc Is~bl Mln IMU Unit
ONCHAWCTERISTICS
DCCurrent Gain hFE
(1c=0.1mAdo,VCE=10Vdoy 75
(1c=1.0mAdo,VCE=10Vdoy 100
(tc=lo~&,vcE=lovdO~ 100
(ic =150mAdo,VCE=10Vdo~ 100
(ic =500 ti~, VCE =10 Vdo) 50
(Ic =1.0 MA*, VCE=10V&, TA=+5”C~ 50
Colleotor-EmitterSaturationVo@e* vcE(~~)
([C=150tik, I,B=15tidO) —
(ic =500tidO, ]B=50 tidO) —
Emtier-BaeeSatumtionVobge* VBE(sat) _
(IC= 150 tidO, iB= 15 ~&)
(IC =500~k, IB=50 ~dO)
SMALL41GNAL CHARACTERISTICS +!r~
.::)*,..:,,
SmalHgnal CurrentGain* he I,@* “$’,
(ic=l.Oti, vcE=lOv&, f=l.O~Z) <~>+,.+y,.l+,
w$~,,,.
....,
SmalMgti CumentTransferRatio,MagnWe Ihfel ,, f;d:,y
(1c.50 rnAdo,VCE=20Vw, f=100MHz) “,jt..;t’~’
outputCspao.bnoe. Co%$ ‘*a. —
~CB=10V*, IE=0, f= 100WZ-1.O MHz) ‘.lf,:?k
Ji>l\.:.\~
InputCaps-”
~BE =2.0V&, Ic =O,f=100 kHz -1.0 MHz) ,a?~:y~ –
.,) ?,’*?,,
T
SWITCHINGCHARACTERISTICS*(ic =150mAdo,IB=15MAW) k“+
Tutin ~me .,4?, .
,?}P<.:fii bn —&ns
Tuti Time .+7$.
‘~$,...
.,>..,.,.?.,... bff –300 ns
.: ,,{,...\,.
Cha*detl~ Tested initial and EndPoint Llmlts Unit
,...!?
~y >,
ColieotorCutoffCurrent ~i.t.~,“,,~:!
.i.i:,~:;.\,~<.’i
..R:J,$$. ICBO —10
NCB = ~ Vdo) nAdc
k:, ,t$$
,$*:, .~$.c..
~,
DC CurrentGain* .+*
~!},iei hFE 100 300
(]c =150 tide, VCE ~$~Vd~”
>J. ..
.,t::,
1~,,.,,1,tfr
).., ..
\
Deltafrom P#Wn Measured Valuea Min Mm
Deh ColltioF@&’6uwent
.Z,r,.~AIcBO
~,,,, —*100 YOof Initial Value
*>, ‘*
~$ or*15 nAdc
,;*\i>$.“i;,!...,..:>
~i...l.,. whichever is greater
D* ~@I~&mentGaing AhFE —%.0 %of Intial Value
*PulS@.’?~ulseWdth 250 to 350 W, D@ Qcle 1.0 to 2.OYO.
.,$
8.0
30
I
a
—
—
pF
pF
COMMERCIAL PLUS AND MIUAERO SMALL SIGNAL TRANSISTOR DATA
-
MOTOROM
2C2907AHV
~,.,
,$,”$b,,$$~’
, .,,,.,
.,.i’-~
MWmlarmw~~@*to&ec ~guWWfutihwnti~to anypmductsharein. Motorola makeenowarranty, repreaentatlonorguararrtea regarding
the su.tifity of-@_ for any particular puw, nordose Motorola assume any tiabi~~ ~.sing out of the @@on or use of any product or cimufi,
andapecifi~yeany anddl titifity, includingwthouf Iim-titiorrWnsequentid oritida~ damages. ~~~ parameterscananddovery indifferent
W@l@~@ -W _terS, l~Udin9 Tmds mustbeWkfated for each customer-ion bymatomer’s technid expe~. Motoroladoas
notconvqyan%l~nee under its patent tights northe rightsof othem. Motorola productsare notdesigned, inteti, orauthorized for use ascomponents in
SYS=- for surg~ impfarrtintothe ~, orotherap~cstiona inteti to support orsustain life, orfor anyother app~ition inwhich the failure of
tha’~,b product could create asituation Wre personal Injury or death may -r. Should Buyer purchase or use Motorola products for any such
,,~l*orunauthorfzed @cation, Buyershdl Indemnifyand hdd Motorola end ifsofffwra, employees, subsidies, afilletea, anddi~butors harmless
%W all ol~~I ~P *a9~, ~~~1 @r~@e ~~ey f- mi~ Mof, drmly wIndirectV, any claim of persona injury or death
satedwh uchunlnttiorunauthotied use,evenifsuchddm dI~eethat Motomlawae negligent reg~ngthe design ormanufactureof the~
MMorola and @era regleteradtrademarks of Motorola, Im. Motorola, Inc. 19an EqW O~rtunlty/Atimsflve Action Em@oyer.
Lfterstura DiatrfbWon tintem
USA Motorola Literature DistrfbutfomP.O.Box2~12; Phoenix,Arizona m.
EUROPE Motorola Ltd.; European Ltierature Oentr~ SSTannersDrive, Blakdarrrfs, Milton Kaynes,MK14 58P, England.
JAPAN Nippon Motorola Ltd.;M2-1, Nishffiotanda, ShlrragewW, Tokyo 141,Japan.
ASIA PACIFIC:Motorola Semiconductors H.K. Ltd.; Siltin HarfmurCenter, No. 2Dai Kng Street Tei Po Industrial Estate,Tai Po, N.T.,Hong Kong.
mM~ROLA
u2C2907AHVID
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