FEATURES
150Vbreakdown voltage
35 A current rating
0.024RDS(on)
150nC gate charge
-55oC to +125oC temperature range
Operational Environmen t radi ation testing to MIL-STD-
750
- Total-dose: 100 krads(Si)
- SEGR/SEB immune to Xe at full rated drain potential
Bare Die
- Prototype, EMs and Class S
Drop-in compatible with industry standards
Class S MOSFETs built to your custom flow
INTRODUCTION
Aeroflex RAD’s RAD7164-NCx Power MOSFET Die are
available now for RadHard applicatio ns. Using proven
RadHard-by-Design methodology, Aeroflex’s Power MOSFET
die are radiation tolerant to 100 krad(Si) and SEGR/SEB
immune to their full rated breakdown potential.
Operational power losses are minimized by Aeroflex’s ideal
combination of low RDS(on) and gate charge. Die size is
optimized for maximum current rating while meeting industry
norms. These units are suitable for standalone and hybrid
applications.
The RAD7164-NCx Die are well suited for low loss switching
applications, such as DC-to-DC Converters and solid-state
relays. They are drop-in compatible with industry standards.
Standard Products
RAD7164-NCx Power MOSFET Die
Data Sheet
January, 2012
www.aeroflex.com/MOSFETS
ELECTRICAL CHARACTERISTICS (Case temperature (Tc) = 25oC unless otherwise specified)
CHARACTERISTICS TEST CONDITIONS LIMITS UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage BVdss Vgs - 0V, Id = 1mA 150 - - V
Gate-Threshold Voltage Vgs(th) Vds = Vgs, Id = 1.0mA 2.0 -4.0 V
Gate-Body Leakage Igss Vgs = +20V - - 100 nA
Zero-Gate Leakage
Drain Current Idss1
Idss2 Vds = 120V, Vgs = 0V
Vds = 120V, Vgs = 0V, Tc
125oC
-
--
-25
250 A
Drain-Source On Resistance Rds(on) Vgs = 12V, Id = 28A - - 0.024 ohms
Gate Charge at 12V Qg(12) Vgs = 12V Id = 35A
Vdd = 75V - - 150 nC
Diode Forward Voltage Vsd Id = 35A, Vgs = 0V 0.6 -1.2 V
Junction-to-Case Rjc NA/Die - - - oC/W