SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
* 625mW POWER DISSIPATION
*I
C CONT 2.5A
*I
C Up To 10A Peak Pulse Current
* Excellent hfe Characteristics Up To 10A (pulsed)
* Extremely Low Saturation Voltage E.g. 10mV Typ.
* Exhibits extremely low equivalent on-resistance; RCE(sat)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
FMMT
717
FMMT
718
FMMT
720
FMMT
722
FMMT
723 UNIT
Collector-Base Voltage VCBO -12 -20 -40 -70 -100 V
Collector-Emitter Voltage VCEO -12 -20 -40 -70 -100 V
Emitter-Base Voltage VEBO -5 -5 -5 -5 -5 V
Peak Pulse Current** ICM -10 -6 -4 -3 -2.5 A
Continuous Collector Current IC-2.5 -1.5 -1.5 -1.5 -1 A
Base Current IB-500 mA
Power Dissipation at Tamb
=25°C* Ptot 625 mW
Operating and Storage
Temperature Range
Tj:Tstg -55 to +150 °C
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
C
B
E
3 - 159
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
DEVICE TYPE COMPLEMENT PARTMARKING RCE(sat)
FMMT717 FMMT617 717 72mΩ at 2.5A
FMMT718 FMMT618 718 97mΩ at 1.5A
FMMT720 FMMT619 720 163mΩ at 1.5A
FMMT722 722 -
FMMT723 FMMT624 723 -
DIM Millimeters Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C 1.10 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.37
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Fax: (44)161-627 5467
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 47 Mall Drive, Unit 4 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY 11725 Hing Fong Road, major countries world-wide
Germany USA Kwai Fong, Hong Kong Zetex plc 1997
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611 Internet:
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494 http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
-55°C
100°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=10
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
25°C
100°C
-55°C
I
C
/I
B
=10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
100A
1mA 10mA 100mA 1A 10A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10A1A
100mA
10mA1mA 100A
1.4
1.6
1mA 10mA 100mA 1A 10A 100A
1.2
1mA 10mA 100A
100mA 1A 10A
1.4
1.6
0.1 1.0 10 100
0.01
0.1
1.0
10
D.C.
1s
100ms
10ms
1ms
100
µ
s
VCE(SAT) vs ICVCE(SAT) vs IC
VBE(SAT) vs IChFE vs IC
VBE(ON) vs IC
10m
100m
1
+25°C
1m
1m 10m 100m 1 10
Collector Current (A)
I
C
/I
B
=100
I
C
/I
B
=50
I
C
/I
B
=30
I
C
/I
B
=10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -12 -35 V IC
=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -12 -25 V IC
=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 -8.5 V IE=-100µA
Collector Cut-Off
Current
ICBO -100 nA VCB=-10V
Emitter Cut-Off Current IEBO -100 nA VEB
=-4V
Collector Emitter
Cut-Off Current
ICES -100 nA V
CES
=-10V
Collector-Emitter
Saturation Voltage
VCE(sat) -10
-100
-110
-180
-17
-140
-170
-220
mV
mV
mV
mV
IC
=-0.1A, IB
=-10mA*
IC
=-1A, IB
=-10mA*
IC
=-1.5A, IB
=-50mA*
IC
=-2.5A, IB
=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 -1.0 V IC
=-2.5A, IB
=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on) -0.8 -1.0 V IC=-2.5A, VCE=-2V*
Static Forward Current
Transfer
Ratio
hFE 300
300
180
60
45
475
450
275
100
70
IC
=-10mA, VCE=-2V*
IC
=-100mA, VCE=-2V*
IC
=-2.5A, VCE=-2V*
IC
=-8A, VCE=-2V*
IC
=-10A, VCE=-2V*
Transition
Frequency
fT80 110 MHz IC
=-50mA, VCE=-10V
f=100MHz
Output Capacitance Cobo 21 30 pF VCB=-10V, f=1MHz
Turn-On Time t(on) 70 ns VCC=-6V, IC
=-2A
IB1=IB2=50mA
Turn-Off Time t(off) 130 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT717FMMT717
3 - 160 3 - 161
-55°C
100°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Collector Current
I
C
/I
B
=10
Collector Current
Collector Current
Collector Current
25°C
100°C
-55°C
25°C
100°C
-55°C
I
C
/I
B
=10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
CE
=2V
0
450
225
25°C
100°C
-55°C
V
CE
=2V
0.2
0.0
1.0
0.8
0.6
0.4
SINGLE PULSE TEST T
amb
= 25 deg C
VCE (VOLTS)
Safe Operating Area
TYPICAL CHARACTERISTICS
100A
1mA 10mA 100mA 1A 10A
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10A1A
100mA
10mA1mA 100A
1.4
1.6
1mA 10mA 100mA 1A 10A 100A
1.2
1mA 10mA 100A
100mA 1A 10A
1.4
1.6
0.1 1.0 10 100
0.01
0.1
1.0
10
D.C.
1s
100ms
10ms
1ms
100
µ
s
VCE(SAT) vs ICVCE(SAT) vs IC
VBE(SAT) vs IChFE vs IC
VBE(ON) vs IC
10m
100m
1
+25°C
1m
1m 10m 100m 1 10
Collector Current (A)
I
C
/I
B
=100
I
C
/I
B
=50
I
C
/I
B
=30
I
C
/I
B
=10
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO -12 -35 V IC
=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO -12 -25 V IC
=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO -5 -8.5 V IE=-100µA
Collector Cut-Off
Current
ICBO -100 nA VCB=-10V
Emitter Cut-Off Current IEBO -100 nA VEB
=-4V
Collector Emitter
Cut-Off Current
ICES -100 nA V
CES
=-10V
Collector-Emitter
Saturation Voltage
VCE(sat) -10
-100
-110
-180
-17
-140
-170
-220
mV
mV
mV
mV
IC
=-0.1A, IB
=-10mA*
IC
=-1A, IB
=-10mA*
IC
=-1.5A, IB
=-50mA*
IC
=-2.5A, IB
=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -0.9 -1.0 V IC
=-2.5A, IB
=-50mA*
Base-Emitter Turn-On
Voltage
VBE(on) -0.8 -1.0 V IC=-2.5A, VCE=-2V*
Static Forward Current
Transfer
Ratio
hFE 300
300
180
60
45
475
450
275
100
70
IC
=-10mA, VCE=-2V*
IC
=-100mA, VCE=-2V*
IC
=-2.5A, VCE=-2V*
IC
=-8A, VCE=-2V*
IC
=-10A, VCE=-2V*
Transition
Frequency
fT80 110 MHz IC
=-50mA, VCE=-10V
f=100MHz
Output Capacitance Cobo 21 30 pF VCB=-10V, f=1MHz
Turn-On Time t(on) 70 ns VCC=-6V, IC
=-2A
IB1=IB2=50mA
Turn-Off Time t(off) 130 ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMT717FMMT717
3 - 160 3 - 161
DERATING CURVE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
MAXIMUM TRANSIENT THERMAL RESISTANCE
FMMT617 FMMT624
FMMT618 FMMT625
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
SuperSOT Series
3 - 158
