APT66F60B2 APT66F60L 600V, 70A, 0.09 Max, trr 310ns N-Channel FREDFET Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. T-Ma x TM TO-264 APT66F60B2 APT66F60L D Single die FREDFET G S FEATURES TYPICAL APPLICATIONS * Fast switching with low EMI * ZVS phase shifted and other full bridge * Low trr for high reliability * Half bridge * Ultra low Crss for improved noise immunity * PFC and other boost converter * Low gate charge * Buck converter * Avalanche energy rated * Single and two switch forward * RoHS compliant * Flyback Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25C 70 Continuous Drain Current @ TC = 100C 44 A IDM Pulsed Drain Current VGS Gate-Source Voltage 30 V EAS Single Pulse Avalanche Energy 2 1845 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 33 A 1 245 Thermal and Mechanical Characteristics Typ Max Unit W PD Total Power Dissipation @ TC = 25C 1135 RJC Junction to Case Thermal Resistance 0.11 RCS Case to Sink Thermal Resistance, Flat, Greased Surface TJ,TSTG Operating and Storage Junction Temperature Range TL Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw Microsemi Website - http://www.microsemi.com 0.11 -55 150 300 C/W C 0.22 oz 6.2 g 10 in*lbf 1.1 N*m Rev C 9-2011 Min Characteristic 050-8173 Symbol Static Characteristics TJ = 25C unless otherwise specified Symbol Parameter Test Conditions Min VBR(DSS) Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 600 VBR(DSS)/TJ Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage VGS(th)/TJ VGS = 10V, ID = 33A 3 Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 600V TJ = 25C VGS = 0V TJ = 125C Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Typ Max 0.57 0.075 4 -10 0.09 5 250 1000 100 VGS = 30V Unit V V/C V mV/C A nA TJ = 25C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25C, ID = 250A Breakdown Voltage Temperature Coefficient RDS(on) APT66F60B2_L Min Test Conditions VDS = 50V, ID = 33A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 65 13190 135 1210 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 645 VGS = 0V, VDS = 0V to 400V 335 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time Resistive Switching Current Rise Time VDD = 400V, ID = 33A tr td(off) tf Turn-Off Delay Time 330 70 140 75 85 225 70 VGS = 0 to 10V, ID = 33A, VDS = 300V RG = 2.2 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) A S 246 TJ = 25C TJ = 125C TJ = 25C VDD = 100V TJ = 125C diSD/dt = 100A/s TJ = 25C Unit 70 G ISD = 33A, TJ = 25C, VGS = 0V ISD = 33A 3 Max TJ = 125C ISD 33A, di/dt 1000A/s, VDD = 400V, TJ = 125C 268 474 1.6 4.2 11.4 16.9 1.0 310 570 V ns C A 20 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 3.39mH, RG =25, IAS = 33A. 050-8173 Rev C 9-2011 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -1.28E-7/VDS^2 + 5.36E-8/VDS + 2.00E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT66F60B2_L 250 V GS 120 = 10V T = 125C J TJ = -55C ID, DRIAN CURRENT (A) 150 TJ = 25C 100 50 80 6V 60 40 5.5V 20 TJ = 150C TJ = 125C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 5V 4.5V 0 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE VGS = 10V @ 33A 2.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 250 200 ID, DRAIN CURRENT (A) 2.0 1.5 1.0 0.5 150 TJ = 25C 100 TJ = 125C 50 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature TJ = -55C 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 120 10,000 C, CAPACITANCE (pF) TJ = 25C 80 TJ = 125C 60 40 1000 Coss 100 Crss 20 0 0 16 VGS, GATE-TO-SOURCE VOLTAGE (V) Ciss TJ = -55C 10 20 30 40 50 60 70 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 120V 10 VDS = 300V 8 6 VDS = 480V 4 2 0 0 250 ID = 33A 14 0 10 80 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE 100 200 150 TJ = 25C 100 TJ = 150C 50 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage Rev C 9-2011 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 3.0 = 7&8V GS 050-8173 ID, DRAIN CURRENT (A) 200 0 V 100 APT66F60B2_L 300 300 100 IDM 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 100 13s 100s Rds(on) 1ms 10ms 1 IDM 13s 10 100s Rds(on) 0.1 1 Scaling for Different Case & Junction 100ms Temperatures: DC line ID = ID(T = 25C)*(TJ - TC)/125 DC line 0.1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 10ms TJ = 150C TC = 25C 1 100ms TJ = 125C TC = 75C 1ms C 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.10 D = 0.9 0.08 0.7 0.06 0.5 0.04 Note: P DM ZJC, THERMAL IMPEDANCE (C/W) 0.12 0.3 t2 t1 = Pulse Duration SINGLE PULSE 0.02 t Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 0.1 0.05 0 10 -5 t1 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration T-MAX(R) (B2) Package Outline 1.0 TO-264 (L) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drai n Drai n 20.80 (.819) 21.46 (.845) 050-8173 Rev C 9-2011 4.50 (.177) Max. 0.40 (.016) 1.016(.040) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drai n Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Drain Source