T-Ma xTM
TO-264
N-Channel FREDFET
Absolute Maximum Ratings
Thermal and Mechanical Characteristics
G
D
S
Single die FREDFET
Unit
A
V
mJ
A
Unit
W
°C/W
°C
oz
g
in·lbf
N·m
Ratings
70
44
245
±30
1845
33
Min Typ Max
1135
0.11
0.11
-55 150
300
0.22
6.2
10
1.1
Parameter
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
Pulsed Drain Current 1
Gate-Source Voltage
Single Pulse Avalanche Energy 2
Avalanche Current, Repetitive or Non-Repetitive
Characteristic
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
Case to Sink Thermal Resistance, Flat, Greased Surface
Operating and Storage Junction Temperature Range
Soldering Temperature for 10 Seconds (1.6mm from case)
Package Weight
Mounting Torque ( TO-264 Package), 4-40 or M3 screw
Symbol
ID
IDM
VGS
EAS
IAR
Symbol
PD
RθJC
RθCS
TJ,TSTG
TL
WT
Torque
TYPICAL APPLICATIONS
• ZVS phase shifted and other full bridge
• Half bridge
• PFC and other boost converter
• Buck converter
• Single and two switch forward
• Flyback
FEATURES
• Fast switching with low EMI
• Low trr for high reliability
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
APT66F60B2
APT66F60L
600V, 70A, 0.09Ω Max, trr ≤ 310ns
APT66F60B2 APT66F60L
Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in fl yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
Microsemi Website - http://www.microsemi.com
050-8173 Rev C 9-2011
Static Characteristics TJ = 25°C unless otherwise specifi ed
Dynamic Characteristics TJ = 25°C unless otherwise specifi ed
Source-Drain Diode Characteristics
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 3.39mH, RG =25Ω, IAS = 33A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is defi ned as a fi xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is defi ned as a fi xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
V
DS less than V(BR)DSS, use this equation: Co(er) = -1.28E-7/VDS^2 + 5.36E-8/VDS + 2.00E-10.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
G
D
S
Unit
V
V/°C
Ω
V
mV/°C
μA
nA
Unit
S
pF
nC
ns
Unit
A
V
ns
μC
A
V/ns
Min Typ Max
600
0.57
0.075 0.09
2.5 4 5
-10
250
1000
±100
Min Typ Max
65
13190
135
1210
645
335
330
70
140
75
85
225
70
Min Typ Max
70
246
1.0
268 310
474 570
1.6
4.2
11.4
16.9
20
Test Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 33A
VGS = VDS, ID = 2.5mA
V
DS = 600V TJ = 25°C
V
GS = 0V TJ = 125°C
VGS = ±30V
Test Conditions
VDS = 50V, ID = 33A
VGS = 0V, VDS = 25V
f = 1MHz
VGS = 0V, VDS = 0V to 400V
VGS = 0 to 10V, ID = 33A,
VDS = 300V
Resistive Switching
VDD = 400V, ID = 33A
RG = 2.2Ω 6 , VGG = 15V
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
ISD = 33A, TJ = 25°C, VGS = 0V
T
J = 25°C
T
J = 125°C
ISD = 33A 3 T
J = 25°C
V
DD = 100V TJ = 125°C
diSD/dt = 100A/μs TJ = 25°C
T
J = 125°C
ISD ≤ 33A, di/dt ≤1000A/μs, VDD = 400V,
TJ = 125°C
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi cient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coeffi cient
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 1
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Peak Recovery dv/dt
Symbol
VBR(DSS)
∆VBR(DSS)/∆TJ
RDS(on)
VGS(th)
∆VGS(th)/∆TJ
IDSS
IGSS
Symbol
gfs
Ciss
Crss
Coss
Co(cr)
4
Co(er)
5
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Symbol
IS
ISM
VSD
trr
Qrr
Irrm
dv/dt
050-8173 Rev C 9-2011
APT66F60B2_L
VGS= 7&8V
4.5V
TJ = 125°C
TJ = 25°C
TJ = -55°C
VGS = 10V
5.5V
6V
5V
VDS> ID(ON) x RDS(ON) MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
VGS = 10V @ 33A
TJ = 125°C
TJ = 25°C
TJ = -55°C
Coss
Ciss
ID = 33A
VDS = 480V
VDS = 120V
VDS = 300V
TJ = 125°C
TJ = 25°C
TJ = -55°C
TJ = 150°C
TJ = 25°C
TJ = 125°C
TJ = 150°C
Crss
V
GS, GATE-TO-SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (A)
I
SD, REVERSE DRAIN CURRENT (A) C, CAPACITANCE (pF) ID, DRAIN CURRENT (A) ID, DRIAN CURRENT (A)
V
DS(ON), DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics Figure 2, Output Characteristics
TJ, JUNCTION TEMPERATURE (°C) VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 3, RDS(ON) vs Junction Temperature Figure 4, Transfer Characteristics
ID, DRAIN CURRENT (A) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5, Gain vs Drain Current Figure 6, Capacitance vs Drain-to-Source Voltage
Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 7, Gate Charge vs Gate-to-Source Voltage Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
0 5 10 15 20 25 30 0 5 10 15 20 25 30
-55 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8
0 10 20 30 40 50 60 70 80 0 100 200 300 400 500 600
0 100 200 300 400 500 0 0.3 0.6 0.9 1.2 1.5
250
200
150
100
50
0
3.0
2.5
2.0
1.5
1.0
0.5
0
120
100
80
60
40
20
0
16
14
12
10
8
6
4
2
0
120
100
80
60
40
20
0
250
200
150
100
50
0
20,000
10,000
1000
100
10
250
200
150
100
50
0
APT66F60B2_L
050-8173 Rev C 9-2011
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
Drai n
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drai n
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drai n
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
e3 100% Sn Plated
TO-264 (L) Package Outline
T-MAX® (B2) Package Outline
1.016(.040)
1ms
100ms
Rds(on)
0.5
SINGLE PULSE
0.1
0.3
0.7
0.05
D = 0.9
Scaling for Different Case & Junction
Temperatures:
ID = ID(TC = 25°C)*(TJ - TC)/125
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
DC line
100μs
IDM
10ms
13μs100μs
IDM
100ms
10ms
13μs
Rds(on)
DC line
TJ = 150°C
TC = 25°C
1ms
TJ = 125°C
TC = 75°C
ID, DRAIN CURRENT (A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V) VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Forward Safe Operating Area Figure 10, Maximum Forward Safe Operating Area
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
ID, DRAIN CURRENT (A)
1 10 100 800 1 10 100 800
300
100
10
1
0.1
0.12
0.10
0.08
0.06
0.04
0.02
0
300
100
10
1
0.1
APT66F60B2_L
050-8173 Rev C 9-2011
