STGW60H65DRF 60 A, 650 V field stop trench gate IGBT with Ultrafast diode Datasheet - production data Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction 2 High switching frequency converters 3 1 Description TO-247 Figure 1. Internal schematic diagram This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation. Features Very high speed switching Tight parameters distribution Safe paralleling Low thermal resistance 6 s short-circuit withstand time Ultrafast soft recovery antiparallel diode Table 1. Device summary Order code Marking Package Packaging STGW60H65DRF GW60H65DRF TO-247 Tube April 2013 This is information on a product in full production. DocID022346 Rev 6 1/13 www.st.com 13 Electrical ratings 1 STGW60H65DRF Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 C 120 A IC Continuous collector current at TC = 100 C 60 A Pulsed collector current 240 A Gate-emitter voltage 20 V Continuous forward current at TC = 25 C 120 Continuous forward current at TC = 100 C 60 IFP(1) Pulsed forward current 240 A PTOT Total dissipation at TC = 25 C 420 W 6 s - 55 to 175 C VCES ICP (1) VGE IF tSC TSTG TJ 1. Parameter A Short-circuit withstand time at VCC = 400 V, VGE = 15 V Storage temperature range Operating junction temperature Pulse width limited by maximum junction temperature and turn-off within RBSOA. Table 3. Thermal data Symbol 2/13 Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.35 C/W RthJC Thermal resistance junction-case diode 1.38 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID022346 Rev 6 STGW60H65DRF 2 Electrical characteristics Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Typ. Max. 650 Unit V VCE(sat) VGE = 15 V, IC = 60 A Collector-emitter saturation VGE = 15 V, IC = 60 A voltage TJ = 125 C 1.9 2.4 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) VCE = 650 V 25 A IGES Gate-emitter leakage current (VCE = 0) VGE = 20 V 250 nA Max. Unit V 2.1 6.0 V Table 5. Dynamic Symbol Cies Coes Cres Qg Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 Min. Typ. - 7150 275 140 - pF pF pF - 217 - nC - 67 - nC - 97 - nC Min. Typ. Max. Unit - ns ns A/s Total gate charge VCC = 400 V, IC = 60 A, VGE = 15 V Qge Gate-emitter charge Qgc Gate-collector charge Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 , VGE = 15 V - 85 33 1800 td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCE = 400 V, IC = 60 A, RG = 10 , VGE = 15 V TJ = 125 C - 82 35 1680 - ns ns A/s tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 , VGE = 15 V - 34 178 30 - ns ns ns tr(Voff) td(off) tf Off voltage rise time Turn-off delay time Current fall time VCE = 400 V, IC = 60 A, RG = 10 , VGE = 15 V TJ = 125 C - 45 205 70 - ns ns ns DocID022346 Rev 6 3/13 Electrical characteristics STGW60H65DRF Table 7. Switching energy (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 , VGE = 15 V - 0.94 1.06 2.0 - mJ mJ mJ Eon (1) Eoff (2) Ets Turn-on switching losses Turn-off switching losses Total switching losses VCE = 400 V, IC = 60 A, RG = 10 , VGE = 15 V TJ = 125 C - 1.48 1.4 2.88 - mJ mJ mJ 1. Eon is the turn-on losses when a typical diode is used in the test circuit in Figure 23. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs and diode are at the same temperature (25 C and 125 C). 2. Turn-off losses include also the tail of the collector current. Table 8. Collector-emitter diode Symbol 4/13 Parameter Test conditions Min. Typ. Max. Unit VF Forward on-voltage IF = 60 A IF = 60 A, TJ = 150 C - 3.7 2.2 4.8 V V trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 60 A, VR = 400 V, di/dt = 1700 A/s - 19 200 15.5 trr Qrr Irrm Reverse recovery time Reverse recovery charge Reverse recovery current IF = 60 A, VR = 400 V, di/dt = 1630 A/s TJ = 125 C - 34 780 46 DocID022346 Rev 6 - ns nC A - ns nC A STGW60H65DRF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Output characteristics (TJ = - 40 C) AM11847v1 IC (A) V GE = 15V 220 200 Figure 3. Output characteristics (TJ = 25 C) V GE = 15V 220 13V V GE = 20V 13V V GE = 20V 200 180 180 11V 160 160 140 140 120 120 100 100 80 80 60 60 40 11V 40 9V 20 0 AM11848v1 IC (A) 0 1 2 3 9V 20 VCE (V) 4 0 0 Figure 4. Output characteristics (TJ = 150 C) AM11849v1 IC (A) V GE = 15V 220 200 1 2 3 VCE (V) 4 Figure 5. Transfer characteristics AM11850v1 IC (A) 220 13V V GE = 20V 200 V CE = 10V 180 180 160 160 11V 140 140 120 120 100 100 80 80 TJ = 150C 60 60 9V 40 40 20 20 0 0 0 1 2 3 Figure 6. VCE(SAT) vs. junction temperature AM11851v1 VCE (V) 2.8 10 11 12 VGE (V) Figure 7. VCE(SAT) vs. collector current AM11852v1 VCE (V) TJ = 150C V GE = 15V TJ = 25C 2.2 2.0 IC = 60A TJ = -40C 1.8 1.6 IC = 30A 1.4 1.4 1.2 -50 9 2.4 1.8 1.6 8 2.6 IC = 120A 2.2 2.0 7 2.8 2.6 2.4 TJ = -40C 6 VCE (V) 4 TJ = 25C -25 0 25 50 75 100 125 TJ (C) 1.2 30 DocID022346 Rev 6 40 50 60 70 80 90 100 110 IC (A) 5/13 Electrical characteristics STGW60H65DRF Figure 8. Normalized VGE(th) vs. junction temperature AM11853v1 VGE(th) norm (V) Figure 9. Gate charge vs. gate-emitter voltage AM11854v1 VGE (V) I C = 1 mA 16 14 1.0 12 10 0.9 8 6 0.8 4 2 0.7 -50 0 -25 0 25 50 75 100 125 TJ (C) Figure 10. Capacitance variations (f = 1 MHz, VGE = 0) AM11855v1 C (pF) 0 200 Qg (nC) AM12736v1 VCC = 400 V, VGE = 15 V, RG = 10 TJ = 25 C TJ = 125 C 3000 Cres 1000 150 E (J) 3500 Coes 100 Figure 11. Switching losses vs. collector current Cies 10000 50 EON --- 2500 2000 1500 100 EOFF 1000 500 10 0.1 1 10 Figure 12. Switching losses vs. gate resistance AM12737v1 E (J) VCC = 400V, VGE = 15V, IC = 60A, TJ = 125 C 3500 0 20 VCE (V) 40 60 80 100 IC (A) Figure 13. Switching losses vs. temperature AM12738v1 E (J) VCC = 400V, VGE = 15V, IC = 60 A, RG = 10 1600 1500 1400 3000 EON 1300 2500 EOFF 1200 EOFF 1100 2000 1000 EON 1500 900 1000 6/13 0 10 20 30 40 RG () 800 25 DocID022346 Rev 6 50 75 100 125 TJ (C) STGW60H65DRF Electrical characteristics Figure 14. Turn-OFF SOA Figure 15. Short circuit time & current vs. VGE AM11859v1 IC (A) AM11860v1 tsc (s) ISC (A) V CC = 400V, TC = 25C 20 100 350 17.5 tSC 15 10 250 12.5 V GE = 15 V, RG = 10 TC = 150 C 1 10 7.5 150 0.1 5 0.01 0.1 1 10 VCE (V) 100 Figure 16. Diode forward current vs. forward voltage AM12739v1 VF (V) 2.5 ISC 9 10 11 12 13 14 15 50 VGE (V) Figure 17. Diode forward current vs. junction temperature AM12740v1 VF (V) Tj = - 40C 4.5 4.5 Tj = 25C IF = 15 A Tj = 150C 4.0 IF = 30 A 4.0 IF = 60 A 3.5 3.5 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 10 15 20 25 30 35 40 45 50 55 60 IF (A) Figure 18. Reverse recovery current as a function of diode current slope AM12741v1 Irm (A) 1.0 -50 75 100 125 150 TJ (C) AM12742v1 --- 20 50 16 40 12 30 8 20 1250 50 trr (ns) 60 750 25 Figure 19. Reverse recovery time as a function of diode current slope VCC = 400V, VGE = 15V, IC = 60A 4 250 0 VCC = 400V, VGE = 15V, IC = 60A 24 TJ = 25 C TJ = 125 C -25 1750 di/dt (A/s) 10 250 DocID022346 Rev 6 TJ = 25 C TJ = 125 C 750 --- 1250 1750 di/dt (A/s) 7/13 Electrical characteristics STGW60H65DRF Figure 20. Reverse recovery charge as a function of diode current slope AM12743v1 Qrr (nC) 650 550 Figure 21. Maximum normalized Zth junction to case (IGBT) AM11861v1 K VCC = 400V, VGE = 15V, IC = 60A TJ = 25 C TJ = 125 C --- Single Pulse D=0.01 450 D=0.02 1E-01 D=0.05 350 D=0.1 250 D=0.2 D=0.5 150 50 250 750 1250 1750 di/dt (A/s) 1E-02 1.E-05 Figure 22. Maximum normalized Zth junction to case (Diode) 8/13 DocID022346 Rev 6 1.E-04 1.E-03 1.E-02 1.E-01 tP (s) STGW60H65DRF 3 Test circuits Test circuits Figure 23. Test circuit for inductive load switching Figure 24. Gate charge test circuit AM01504v1 Figure 25. Switching waveform AM01505v1 Figure 26. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 DocID022346 Rev 6 AM01507v1 9/13 Package mechanical data 4 STGW60H65DRF Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 9. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 10/13 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID022346 Rev 6 5.70 STGW60H65DRF Package mechanical data Figure 27. TO-247 drawing 0075325_G DocID022346 Rev 6 11/13 Revision history 5 STGW60H65DRF Revision history Table 10. Document revision history Date Revision Changes 11-Oct-2011 1 Initial release. 06-Jun-2012 2 Document status promoted from preliminary data production data. Added: Section 2.1: Electrical characteristics (curves) on page 5. 19-Jun-2012 3 Updated parameters in Table 2. 26-Jul-2012 4 Updated parameters in Table 2. 21-Jan-2013 5 Modified VF test conditions, typ. and max values Table 8 on page 4. 02-Apr-2013 6 Modified: - PTOT value Table 2 on page 2. - Eon and Ets typical values Table 7 on page 4. 12/13 DocID022346 Rev 6 STGW60H65DRF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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