5 V, 3 A Logic Controlled
High-Side or Low-Side Load Switch
Data Sheet
ADP1196
Rev. B Document Feedback
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FEATURES
Low RDSON of 10 mΩ in 6-ball WLCSP
Wide input voltage range: 0 V to 5.5 V
3 A continuous operating current at 70°C
Bias supply voltage range: 1.83 V to 5.5 V
Low 26 µA ground (quiescent) current, VIN ≤ 3.4 V
Low 50 µA quiescent current, VIN = 5.5 V
Overtemperature protection circuitry
Low shutdown current: <3.5 µA
Ultrasmall 1.0 mm × 1.5 mm, 6-ball, 0.5 mm pitch WLCSP
APPLICATIONS
Communications and infrastructure
Thermoelectric cooler (TEC) controller reverse polarity
for heating and cooling
Fine line geometry core voltage inrush current control
Medical and healthcare
Instrumentation
TYPICAL APPLICATIONS CIRCUITS
Figure 1. High-Side Load Application
Figure 2. Low-Side Load Application
GENERAL DESCRIPTION
The ADP1196 is a high-side or low-side load switch designed for
VIN operation between 0 V and 5.5 V with a VB_EN supply of
1.83 V to 5.5 V. The device contains an internal charge pump that
operates from either VIN or VB_EN, whichever is higher, and
an ultralow on resistance, N-channel MOSFET. This N-channel
MOSFET supports more than 2 A of continuous current at VIN
close to 0 V, and, with its ultralow on resistance, minimizes power
loss. In addition, the on resistance is constant, independent of the
VIN or VB_EN voltage. The low 26 µA quiescent current and
ultralow shutdown current make the ADP1196 ideal for low
power applications.
When the junction temperature exceeds 125°C, overtemperature
protection circuitry is activated, thereby protecting the ADP1196
and downstream circuits from potential damage.
The ADP1196 occupies minimal printed circuit board (PCB)
space, with an area of less than 1.5 mm2 and a height of 0.60 mm.
The ADP1196 is available in an ultrasmall 1.0 mm × 1.5 mm,
6-ball, 0.5 mm pitch WLCSP.
ADP1196
GND
VIN VOUT
VIN VOUT
VB_EN LOAD
+
–
+
–
11260-001
ADP1196
GND
VIN VOUT
VIN VOUT
VB_EN
LOAD
+
–
+
–
11260-002
ADP1196 Data Sheet
Rev. B | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Typical Applications Circuits .......................................................... 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Timing Diagram ........................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Typical Performance Characteristics ..............................................6
Theory of Operation .........................................................................9
Applications Information .............................................................. 10
Capacitor Selection .................................................................... 10
Ground Current .......................................................................... 10
Enable Feature ............................................................................ 10
Timing ......................................................................................... 11
Thermal Overload Protection .................................................. 11
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
4/14—Rev. A to Rev. B
Changes to Theory of Operation .................................................... 9
Changes to Thermal Overload Protection .................................. 11
2/14—Rev. 0 to Rev. A
Changes to Table 1 ............................................................................ 3
Changes to Figure 3 .......................................................................... 3
Changes to Ordering Guide .......................................................... 12
6/13—Revision 0: Initial Version
Data Sheet ADP1196
Rev. B | Page 3 of 12
SPECIFICATIONS
VIN = 1.8 V, VVB_EN = 1.83 V, IOUT = 1 A, TA = 25°C, TJ = −40°C to +85°C for minimum/maximum specifications, unless otherwise noted.
Table 1.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT VOLTAGE RANGE VIN 0 5.5 V
BIAS SUPPLY VOLTAGE RANGE VVB_EN 1.83 5.5 V
ENABLE
VB_EN Input VIH V
IN < 1.8 V 1.83 V
V
IL V
IN < 1.8 V 1.6 V
V
IH V
IN = 1.8 V to 5.5 V 1.2 V
V
IL V
IN = 1.8 V to 5.5 V 0.4 V
VB_EN Pull-Down Resistor IEN V
VB_EN = 400 mV 4 MΩ
CURRENT
Ground (Quiescent) Current IGND V
IN = 1.83 V, 1.2 V < VVB_EN < 1.8 V or VVB_EN = 1.83 V, VIN = 0 V 26 60 µA
V
IN = 3.4 V, 1.2 V < VVB_EN < 1.8 V or VVB_EN = 3.4 V, VIN = 0 V 26 µA
V
IN = 4.2 V, 1.2 V < VVB_EN < 1.8 V or VVB_EN = 4.2 V, VIN = 0 V 35 60 µA
V
IN = 5.5 V, 1.2 V < VVB_EN < 1.8 V or VVB_EN = 5.5 V, VIN = 0 V 50 80 µA
Shutdown Current IOFF V
VB_EN = GND, VOUT = 0 V, VIN = 4.2 V 3.5 µA
V
VB_EN = GND, VOUT = 0 V, VIN = 1.8 V to 5.5 V 50 µA
Continuous Operating Current1 I
OUT VIN = 1.83 V to 5.5 V, VVB_EN > 1.2 V or VVB_EN = 1.83 V to 5.5 V,
VIN = 0.045 V to VVB_EN
3 A
VIN TO VOUT RESISTANCE RDSON 0.0 V < VIN < 5.5 V, VVB_EN ≥ 1.83 V 0.01 0.015 Ω
VOUT TURN-ON TIME See Figure 3
Turn-On Time tON V
IN = 0 V to 5.5 V, VVB_EN ≥ 1.83 V, CLOAD = 1 µF 5.5 10 ms
VOUT TURN-OFF TIME See Figure 3
Turn-Off Time tOFF_TIME V
IN = 0 V to 5.5 V, VVB_EN ≥ 1.83 V, CLOAD = 1 µF, ILOAD=10 mA 150 800 sec
THERMAL SHUTDOWN
Thermal Shutdown Threshold TSSD T
J rising 125 °C
Thermal Shutdown Hysteresis TSSD-HYS 15 °C
1 At an ambient temperature of 85°C, the part can withstand a continuous current of ±2.22 A. At a load current of 3 A, the operational lifetime derates to 2190 hours.
TIMING DIAGRAM
Figure 3. Timing Diagram
V
EN
V
OUT
90%
10%
TURN-OFFTURN-ON
11260-004
ADP1196 Data Sheet
Rev. B | Page 4 of 12
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Rating
VIN to GND −0.3 V to +6.5 V
VOUT to GND −0.3 V to VIN
VB_EN to GND −0.3 V to +6.5 V
Continuous Drain Current
TA = 25°C ±4 A
TA = 85°C ±2.22 A
Continuous Diode Current −50 mA
Storage Temperature Range −65°C to +150°C
Operating Junction Temperature Range −40°C to +105°C
Soldering Conditions JEDEC J-STD-020
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
Table 3. Typical θJA and ΨJB Values
Package Type θJA Ψ
JB Unit
6-Ball, 0.5 mm Pitch WLCSP 260 58 °C/W
ESD CAUTION
Data Sheet ADP1196
Rev. B | Page 5 of 12
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 4. Pin Configuration
Table 4. Pin Function Descriptions
Pin No. Mnemonic Description
A1, B1 VIN Input Voltage.
A2, B2 VOUT Output Voltage.
C1 VB_EN Enable/Bias Input. Drive VB_EN high to turn on the switch, and drive VB_EN low to turn off the switch.
C2 GND Ground.
VIN VOUT
VIN
VB_EN GND
TOP VIEW
(BAL L SIDE DOWN)
Not to Scale
1
A
B
C
2
BALL
A
1
INDICATOR
VOUT
11260-003
ADP1196 Data Sheet
Rev. B | Page 6 of 12
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 1.8 V, VVB_EN = 1.83 V, CIN = COUT = 1 µF, TA = 25°C, unless otherwise noted.
Figure 5. RDSON vs. Temperature, 50 mA, Different Input Voltages (VIN)
Figure 6. RDSON vs. Temperature, 3 A, Different Input Voltages (VIN)
Figure 7. RDSON vs. Input Voltage (VIN), Different Load Currents
Figure 8. Voltage Drop vs. Input Voltage (VIN), Different Load Currents
Figure 9. Ground Current vs. Temperature, Different Load Currents, VIN = 1.8 V
Figure 10. Ground Current vs. Temperature, Different Load Currents, VIN = 3.6 V
0
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
–40 –30 –20 –10 010 20 30 40 50 60 70 80 90
RDS
ON
(Ω)
TEMPERAT URE ( °C)
V
IN
= 0.2V
V
IN
= 1V
V
IN
= 3V
V
IN
= 5.5V
11260-005
0
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
–40 –30 –20 –10 010 20 30 40 50 60 70 80 90
RDS
ON
(Ω)
TEMPERAT URE ( °C)
V
IN
= 0.2V
V
IN
= 1V
V
IN
= 3V
V
IN
= 5.5V
11260-006
0
0.005
0.010
0.015
0.020
0.025
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
RDS
ON
(Ω)
INP UT VOLTAGE (V)
IOUT = 50mA
IOUT = 100m A
IOUT = 200m A
IOUT = 500m A
IOUT = 1000mA
IOUT = 3000mA
11260-007
0
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
0.045
0.050
00.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
DIFFERENCE (V)
INP UT VOLTAGE (V)
I
OUT
= 50mA
I
OUT
= 100m A
I
OUT
= 200m A
I
OUT
= 500m A
I
OUT
= 1000mA
I
OUT
= 3000mA
11260-008
0
5
10
15
20
25
30
35
40
45
50
–40 –5 25 55 85
TEMPERAT URE ( °C)
GROUND CURRENT (µA)
I
OUT
= 100m A
I
OUT
= 200m A
I
OUT
= 500m A
I
OUT
= 1000mA
I
OUT
= 3000mA
115
11260-009
–40 –5 25 55 85 115
0
5
10
15
20
25
30
35
40
45
50
TEMPERAT URE ( °C)
GROUND CURRENT (µA)
11260-010
I
OUT
= 100m A
I
OUT
= 200m A
I
OUT
= 500m A
I
OUT
= 1000mA
I
OUT
= 3000mA
Data Sheet ADP1196
Rev. B | Page 7 of 12
Figure 11. Ground Current vs. Temperature, Different Load Currents, VIN = 5 V
Figure 12. Ground Current vs. Load Current,
Different Input Voltages (VIN)
Figure 13. Shutdown Current vs. Temperature,
Different Input Voltages (VIN), VOUT Open
Figure 14. Shutdown Current vs. Temperature, VOUT = 0 V,
Different Input Voltages (VIN)
Figure 15. Typical Turn-On Time and Inrush Current,
VIN = 1.8 V, COUT = 47 μF, 330 Ω Load
Figure 16. Typical Turn-On Time and Inrush Current,
VIN = 1.8 V, COUT = 100 μF, 330 Ω Load
0
10
20
30
40
50
60
70
80
90
100
GROUND CURRENT (µA)
IOUT = 100m A
IOUT = 200m A
IOUT = 500m A
IOUT = 1000mA
IOUT = 3000mA
–40 –5 25 55 85 115
TEMPERAT URE ( °C)
11260-011
0
10
20
30
40
50
60
70
80
90
100
10 100 1000 10000
LOAD CURRENT ( mA)
GROUND CURRENT (µA)
V
IN
= 0.2V
V
IN
= 0.3V
V
IN
= 0.4V
V
IN
= 0.5V
V
IN
= 1.0V
V
IN
= 2.0V
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
V
IN
= 5.5V
11260-012
0
2
4
6
8
10
–40 –20 020 40 60 80 100
TEMPERAT URE ( °C)
SHUT DOWN CURRE NT (µA)
V
IN
= 0.2V
V
IN
= 0.3V
V
IN
= 0.4V
V
IN
= 0.5V
V
IN
= 1.0V
V
IN
= 2.0V
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
V
IN
= 5.5V
11260-013
0
4
8
12
16
20
–40 –20 020 40 60 80 100
TEMPERAT URE ( °C)
SHUT DOWN CURRE NT (µA)
V
IN
= 0.2V
V
IN
= 0.3V
V
IN
= 0.4V
V
IN
= 0.5V
V
IN
= 1.0V
V
IN
= 2.0V
V
IN
= 3.0V
V
IN
= 4.0V
V
IN
= 5.0V
V
IN
= 5.5V
11260-014
CH1 20mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 500mV
BW
BW
T
VOUT
INP UT CURRENT
ENABLE
2
3
11260-015
CH1 50mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 500mV
BW
BW
T
VOUT
INP UT CURRENT
ENABLE
2
3
11260-016
ADP1196 Data Sheet
Rev. B | Page 8 of 12
Figure 17. Typical Turn-On Time and Inrush Current,
VIN = 3.3 V, COUT = 47 μF, 330 Ω Load
Figure 18. Typical Turn-On Time and Inrush Current,
VIN = 3.3 V, COUT = 100 μF, 330 Ω Load
Figure 19. Typical Turn-On Time and Inrush Current,
VIN = 5 V, COUT = 47 μF, 330 Ω Load
Figure 20. Typical Turn-On Time and Inrush Current,
VIN = 5 V, COUT = 100 μF, 330 Ω Load
CH1 20mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 1V
BW
BW
T
VOUT
INP UT CURRENT
ENABLE
2
3
11260-017
CH1 50mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 1V
BW
BW
T
VOUT
INP UT CURRENT
ENABLE
2
3
11260-018
CH1 20mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 2V
BW
BW
T
VOUT
INP UT CURRENT
ENABLE
2
3
11260-019
CH1 50mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 2V
BW
BW
T
VOUT
INP UT CURRENT
ENABLE
2
3
11260-020
Data Sheet ADP1196
Rev. B | Page 9 of 12
THEORY OF OPERATION
Figure 21. Functional Block Diagram
The ADP1196 is a high-side or low-side N-channel metal oxide
semiconductor (NMOS) load switch that is controlled by an
internal charge pump. The ADP1196 operates with voltages
from 1.83 V to 5.5 V on either VIN or VB_EN.
Internal circuitry monitors the VIN and VB_EN pins, connecting
the internal power supply to the higher of the two voltages. This
operation allows the NMOS load switch to operate on the low
side of a particular load.
An internal charge pump biases the NMOS switch to achieve a
relatively constant, ultralow on resistance of 10 mΩ across the
entire supply range. The use of the internal charge pump also
allows for controlled turn-on times. Turning the NMOS switch
on and off is controlled by the enable input, VB_EN, which can
interface directly with 1.83 V logic signals when VIN is greater
than 1.8 V.
The ADP1196 supports 3 A of continuous current as long as TA is
less than or equal to 70°C. At 85°C, the derated load current falls to
±2.22 A.
The overtemperature protection circuit is activated if the load
current causes the junction temperature to exceed 125°C. When
this occurs, the overtemperature protection circuitry disables the
output until the junction temperature falls below approximately
110°C, at which point the output is reenabled. If the fault condition
persists, the output cycles off and on until the fault is removed.
ESD protection structures are shown in the block diagram as
Zener diodes (see Figure 21).
The ADP1196 is a low quiescent current device with a nominal
4 MΩ pull-down resistor on its enable pin (VB_EN). The package
is a space-saving 1.0 mm × 1.5 mm, 6-ball WLCSP.
VOUTVIN
VOUTVIN
GND
VB_EN CHARGE PUMP,
OVERCURRENT,
AND SL E W RATE
CONTROL
OVERTEMPERATURE
PROTECTION
SUPPLY SWITCH
ENABLE LOGIC
11260-021
ADP1196 Data Sheet
Rev. B | Page 10 of 12
APPLICATIONS INFORMATION
CAPACITOR SELECTION
Output Capacitor
The ADP1196 is designed for operation with small, space-
saving ceramic capacitors; however, it functions with most
commonly used capacitors when the effective series resistance
(ESR) value is carefully considered. The ESR of the output
capacitor affects the response to load transients. Use a typical
1 µF capacitor with an ESR of 0.1 Ω or less for good transient
response. Using a larger value of output capacitance improves
the transient response to large changes in load current.
Input Bypass Capacitor
Connecting at least 1 µF of capacitance from VIN to GND reduces
the circuit sensitivity to the PCB layout, especially when high
source impedance or long input traces are encountered. When
greater than 1 µF of output capacitance is required, increase the
input capacitor to match it.
GROUND CURRENT
The major source of ground current in the ADP1196 is the
internal charge pump for the field effect transistor (FET) drive
circuitry. Figure 22 shows the typical ground current when
VVB_EN = 1.83 V and VIN varies from 0.2 V to 5.5 V.
Figure 22. Ground Current vs. Input Voltage, Different Load Currents
ENABLE FEATURE
The ADP1196 uses the VB_EN pin to enable and disable the
VOUT pin under normal operating conditions. As shown in
Figure 23, when a rising voltage (VVB_EN) on the VB_EN pin
crosses the active threshold, VOUT turns on. When a falling
voltage (VVB_EN) on the VB_EN pin crosses the inactive
threshold, VOUT turns off.
Figure 23. Typical VB_EN Operation
As shown in Figure 23, the VB_EN pin has hysteresis built into
it. This built-in hysteresis prevents on/off oscillations that can
occur due to noise on the VB_EN pin as it passes through the
threshold points.
The VB_EN pin active/inactive thresholds derive from the VIN
voltage; therefore, these thresholds vary with changing input
voltages. Figure 24 shows the typical VB_EN active/inactive
threshold when the input voltage varies from 1.83 V to 5.5 V.
Figure 24. Typical VB_EN Threshold vs. Input Voltage (VIN)
INP UT VOLTAGE (V)
01.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
GROUND CURRENT (µA)
11260-122
I
OUT
= 50mA
I
OUT
= 100m A
I
OUT
= 200m A
I
OUT
= 500m A
I
OUT
= 1000mA
I
OUT
= 3000mA
0
10
20
30
40
50
60
70
80
90
100
0.5 1.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
00.2 0.4 0.6 0.8 1.0 1.2
V
OUT
(V)
ENABL E V OLTAGE (V)
V
VB_EN
FALLING V
VB_EN
RISING
V
OUT
AT 3.6V
11260-023
0
0.2
0.4
0.6
0.8
1.0
1.2
1.8 2.2 2.6 3.0 3.4 3.8 4.2 4.6 5.0 5.4
VB_EN THRESHOLD (V)
INPUT VOLTAGE (V)
V
VB_EN
RISE
V
VB_EN
FALL
11260-024
Data Sheet ADP1196
Rev. B | Page 11 of 12
TIMING
Turn-on delay is defined as the interval between the time that
VVB_EN exceeds the rising threshold voltage and when VOUT rises
to ~10% of its final value. The ADP1196 includes circuitry that has
a typical 2 ms turn-on delay and a controlled rise time to limit
the VIN inrush current. As shown in Figure 25 and Figure 26,
the turn-on delay is nearly independent of the input voltage.
Figure 25. Typical Turn-On Time and Inrush Current,
VIN = 1.8 V, COUT = 47 μF, 330 Ω Load
Figure 26. Typical Turn-On Time and Inrush Current,
VIN = 5 V, COUT = 47 μF, 330 Ω Load
The rise time is defined as the time it takes the output voltage
(VOUT) to rise from 10% to 90% of its final value. The output
voltage rise time is dependent on the rise time of the internal
charge pump.
For very large values of output capacitance, the RC time constant
(where C is the load capacitance (CLOAD) and R is the RDSON||RLOAD)
can become a factor in the rise time of the output voltage. Because
RDSON is much smaller than RLOAD, an adequate approximation
for RC is RDSON × CLOAD. An input or load capacitor is not required
for the ADP1196, although capacitors can be used to suppress
noise on the board.
The turn-off time is defined as the time it takes for the output
voltage to fall from 90% to 10% of VOUT. It is also dependent on
the RC time constant of the output capacitance and load resistance.
Figure 27 shows the typical turn-off times with VIN = 1.8 V, VIN =
3.3 V, a n d VIN = 5.0 V, C OUT = 47 μF, an d R LOAD = 330 Ω.
Figure 27. Typical Turn-Off Time, VIN = 1.8 , VIN = 3.3 V, and VIN = 5.0 V,
COUT = 47 μF, RLOAD = 330 Ω
THERMAL OVERLOAD PROTECTION
Thermal overload protection is included, which limits the junction
temperature to a maximum of 125°C (typical). Under extreme
conditions (that is, high ambient temperature and/or high power
dissipation), when the junction temperature starts to rise above
125°C, the output is turned off, reducing the output current to
zero. When the junction temperature falls below 110°C, the
output is turned on again, and output current is restored to its
operating value.
If the self-heating of the junction is great enough to cause its
temperature to rise above 125°C, thermal shutdown is activated,
turning off the output and reducing the output current to zero.
As the junction temperature cools and falls below 110°C, the
output turns on and conducts current into the load, again
causing the junction temperature to rise above 125°C. This
thermal oscillation between 110°C and 125°C causes a current
oscillation between the load current and 0 mA that continues as
long as the load remains connected to the output.
The thermal limit protection is intended to protect the device
against accidental overload conditions. For reliable operation,
device power dissipation must be externally limited so that the
junction temperature does not exceed 125°C.
CH1 20mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 500mV
BW
BW
T
V
OUT
INP UT CURRENT
ENABLE
2
3
11260-025
CH1 20mAΩCH2 1V M1ms A CH2 1.18V
1
T 10.6%
BW
CH3 2V
BW
BW
T
VOUT
INP UT CURRENT
ENABLE
2
3
11260-026
0
1.0
2.0
3.0
4.0
5.0
6.0
00.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10
TIME (SEC)
V
OUT
(V)
V
VB_EN
V
IN
= 5.0V
V
IN
= 3.3V
V
IN
= 1.8V
11260-027
ADP1196 Data Sheet
Rev. B | Page 12 of 12
OUTLINE DIMENSIONS
Figure 28. 6-Ball Wafer Level Chip Scale Package [WLCSP]
(CB-6-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model1 Temperature Range Package Description Package Option Branding
ADP1196ACBZ-02-R7 −40°C to +85°C 6-Ball Wafer Level Chip Scale Package [WLCSP] CB-6-2 CK
1 Z = RoHS Compliant Part.
11-08-2012-B
A
B
C
0.675
0.595
0.515
0.380
0.355
0.330
0.270
0.240
0.210
1.000
0.950
0.900
1.500
1.450
1.400
12
BOTTOM VIEW
(BALL SI DE UP)
TOP VIEW
(BAL L S I DE DOWN)
SIDE VIEW
0.345
0.295
0.245
1.00
REF
0.50
BSC
BALL A1
IDENTIFIE
R
SEATING
PLANE
0.50 BSC
COPLANARITY
0.075
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D11260-0-4/14(B)
