2SB772
PNP Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 1.25Watts of Power Dissipation.
• Collector-current 3.0A
• Collector-base Voltage 40V
• Operating and storage junction temperature range: -55OC to +150OC
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(IC=10mAdc, IB=0) 30 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I C=100uAdc, IE=0) 40 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I E=100uAdc, IC=0) 5.0 --- Vdc
ICBO Collector Cutoff Current
(V CB=40Vdc, IE=0) --- 1.0 uAdc
ICEO Collector Cutoff Current
(V CE=30Vdc, IB=0) --- 1.0 uAdc
IEBO Emitter Cutoff Current
(V EB=6.0Vdc, IC=0) --- 1.0 uAdc
ON CHARACTERISTICS
hFE(1) DC Current Gain
(IC=1.0Adc, VCE=2.0Vdc) 60 400 ---
hFE(2) DC Current Gain
(IC=100mAdc, VCE=2.0Vdc) 32 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc) --- 0.5 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I C=2.0Adc, IB=0.2Adc) --- 2.0 Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency
(I C=0.1Adc, VCE=5.0Vdc, f=10MHz) 50 --- MHz
CLASSIFICATION OF HFE (1)
Rank R O Y GR
Range 60-120 100-200 160-320 200-400
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PIN 1. EMITTER
PIN 2. COLLECTOR
1 2 3
PIN 3. BASE
omponents
20736 Marilla Street Chatsworth
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Revision: 2 2003/04/30